摘要:
A vertical heat treatment apparatus includes a heat treatment unit for performing a heat treatment process to a semiconductor wafer using a gas and a gas supply unit for supplying the gas to the heat treatment unit. The gas supply unit includes a plurality of gas controlling instruments having a plurality of gas flow control devices, a gas controlling instruments-storage vessel for storing the instruments, and a plurality of electrical parts arranged outside the storage vessel and belonging to the instruments, and an electrical parts-storage vessel for storing the electrical parts, and the plurality of gas flow control devices are integrated with each other by block-like joints.
摘要:
There is disclosed a flow control apparatus including a base body having a fluid inlet and a fluid outlet and a flow path for causing the inlet to communicate with the outlet, a flow adjustment means for adjusting a flow rate of the fluid in the flow path of said base body, a flow-rate detection means for detecting the flow rate of the fluid in the flow path, and a flow control means for outputting a flow-rate control signal to the flow adjustment means on the basis of a detection result of the flow-rate detection means to control the flow rate of the fluid to a predetermined value. At least one of the fluid inlet and the fluid outlet is positioned such that the flow direction of the fluid at a corresponding one of the fluid inlet and the fluid outlet is perpendicular to the flow path.
摘要:
A flow control apparatus comprises a base body, first and second gas passages provided in the base body for passing gas therethrough, gas flow adjusting mechanism, provided so as to connect the first and second gas passages to each other, for adjusting the flow of gas passing therethrough, and gas flow control unit for outputting a flow control signal to the gas flow adjusting mechanism so as to control the flow of gas passing through the first or second gas passage. In the base body, a bypass passage is formed in the base body for connecting the first and second gas passages to each other, and a valve mechanism is employed for opening and closing the bypass passage. When a trouble has occurred, the valve mechanism is opened, and a purging gas is supplied through the bypass passage to purge a flammable or noxious gas. Thereafter, the gas flow control apparatus is removed and repaired.
摘要:
A gas measuring device includes a dissolving unit for dissolving gas to be measured in solvent medium, a measuring unit for measuring the amount of ions generated when the gas to be measured is ionized in the liquid medium, and a calculating unit for calculating the amount of the gas to be measured from a value measured by the measuring unit.
摘要:
A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.
摘要:
A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.
摘要:
Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
摘要:
An image forming apparatus includes an image bearing member; a charging device for electrically charging the image bearing member; a rotatable developer carrying member for carrying a developer to develop an electrostatic image formed on the image bearing member with the developer, the developer carrying member being supplied with a developing bias voltage including an AC voltage; non-rotatable magnetic field generating device, disposed inside the developer carrying member, for magnetically attracting the developer on the developer carrying member, wherein the developer carrying member has a surface elastic layer, and the developer carrying member is press-contacted to the image bearing member, and the developer is one component magnetic toner, and a maximum value of an absolute value of the developing bias voltage |V|max and a surface potential of the image bearing member charge by the charging device is Vd(V), satisfy, |V|max=|Vd|.
摘要翻译:图像形成装置包括:图像承载部件; 用于对图像承载部件进行充电的充电装置; 可转动显影剂承载构件,用于承载显影剂以使显影剂形成在图像承载构件上形成的静电图像,显影剂承载构件被提供包括AC电压的显影偏压; 非旋转磁场产生装置,设置在显影剂承载构件内部,用于将显影剂吸引在显影剂承载构件上,其中显影剂承载构件具有表面弹性层,并且显影剂承载构件与图像承载件压接 显影剂是单组分磁性调色剂,显影偏压| V | max的绝对值的最大值和由充电装置充电的图像承载部件的表面电位为Vd(V)满足, <?in-line-formula description =“In-line Formulas”end =“lead”?> | V | max = | Vd |。<?in-line-formula description =“In-line Formulas”end =“tail “?>
摘要:
A developing device includes a rotatable developer carrying member for carrying a developer to develop an electrostatic image formed on an image bearing member with the developer; non-rotatable magnetic field generating means, disposed inside the developer carrying member, for magnetically attracting the developer on the developer carrying member; a regulating member for regulating an amount of the developer carried on the developer carrying member, wherein the developer carrying member is provided with a surface elastic layer, and the developer carrying member is press-contacted to the image bearing member, and wherein, the developer is an one component magnetic toner having an average circularity not less than 0.965, and an amount of the developer per unit area of the developer regulated by the regulating member is 5-14 g/m2, and an amount of electric charge thereof is 10-50 μC/g.
摘要翻译:显影装置包括可旋转的显影剂承载构件,用于承载显影剂以使显影剂形成在图像承载构件上的静电图像显影; 非旋转磁场产生装置,设置在显影剂承载构件内部,用于将显影剂磁性地吸引在显影剂承载构件上; 用于调节载持在显影剂承载构件上的显影剂的量的调节构件,其中显影剂承载构件设置有表面弹性层,并且显影剂承载构件与图像承载构件压接,并且其中,显影剂 是平均圆形度不小于0.965的单组分磁性调色剂,并且由调节构件调节的显影剂的每单位面积的显影剂的量为5-14g / m 2,并且 其电荷量为10-50微克/克。
摘要:
A developing apparatus having a developing sleeve provided with an elastic layer on its surface, and for developing an electrostatic image formed on an image bearing member with a mono-component magnetic toner having a mean degree of circularity of 0.965 or greater, a magnet provided in the developing sleeve, and a blade for regulating the amount of the developer carried on the developing sleeve satisfies the expressions |Br|/|B|≧0.5 and Nsb/(Bs×R)≦0.5, where B [G] is magnetic flux density formed on the surface of the developing sleeve by the magnet at the contact position between the blade and the developing sleeve, Nsb [mm] is the contact width between the blade and the developing sleeve, Br [G] is a component of magnetic flux density B [G] in a direction perpendicular to the surface of the developing sleeve, Bs [rad] is a half value width of the perpendicular component of the magnetic flux density of the nearest one of the magnetic poles of the magnet to the contact position on the surface of the developing sleeve, and R [mm] is the radius of the developing sleeve.