摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin which contains (A) a repeating unit having an ionic structure moiety capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation, wherein a cation moiety of the ionic structure moiety has an acid-decomposable group or an alkali-decomposable group.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1) (in the formula, each of R11 and R12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X11 represents an aryl group; M11 represents a single bond or a divalent linking group; and Q11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M11-Q11 is 3 or more, and at least two of R11, R12, Q11, and X11 may form a ring by bonding to each other).
摘要翻译:本发明提供含有含有至少一个酚羟基的化合物(A)和酚羟基中的氢原子被下述基团取代的基团的光化射线敏感性或辐射敏感性树脂组合物 通式(1)(式中,R 11和R 12各自独立地表示氢原子,烷基,环烷基,芳基或芳烷基; X 11表示芳基; M 11表示单键或 二价连接基团; Q11表示烷基,环烷基或芳基,其中包含在-M11-Q11中的基团中的碳原子数为3以上,R11, R12,Q11和X11可以通过彼此结合形成环)。
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin which contains (A) a repeating unit having an ionic structure moiety capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation, wherein a cation moiety of the ionic structure moiety has an acid-decomposable group or an alkali-decomposable group.
摘要:
A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. wherein, R1 represents a hydrocarbon group, R2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.
摘要翻译:通过使用含有(A)具有酚羟基的氢原子被下述通式(I)表示的基团取代的结构的高分子化合物的化学扩增型抗蚀剂组合物形成的抗蚀剂膜,(B) 在用光化学射线或辐射照射时产生酸的化合物和有机溶剂,并且膜厚度为10-200nm。 其中,R1表示烃基,R2表示氢原子或烃基,Ar表示芳基。 R 1还可以与Ar结合形成也可含有杂原子的环。 *表示与酚羟基的氧原子的结合位置。
摘要:
An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition.The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.