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44 条记录 (耗时 0.033 秒)

    Thin film device
    3.
    发明授权
    Thin film device 有权
    薄膜装置

    公开(公告)号：US07785697B2

    公开(公告)日：2010-08-31

    申请号：US11819263

    申请日：2007-06-26

    申请人： Taku Masai ,  Hitoshi Sakuma ,  Kyung-Ku Choi ,  Toshiyasu Fujiwara

    发明人： Taku Masai ,  Hitoshi Sakuma ,  Kyung-Ku Choi ,  Toshiyasu Fujiwara

    IPC分类号： B32B3/02

    CPC分类号： H01L23/5227 ,  H01F17/0033 ,  H01F41/042 ,  H01F2017/0073 ,  H01L2924/0002 ,  Y10T428/24521 ,  Y10T428/24612 ,  H01L2924/00

    摘要： The present invention provides a thin film device in which resin film does not easily separate. In a thin film device, a conductor pattern is formed on one of the main surfaces of a plate-shaped base, and the conductor pattern is covered with a resin film. This conductor pattern has a bottom face disposed on the main surface of the base, a top face that faces the bottom face and is distant from the main surface of the base, and two side faces that connect the bottom face and the top face. A depressed portion is formed in these side faces, and an insulation film extends into the depressed portion.

    摘要翻译： 本发明提供一种薄膜器件，其中树脂膜不容易分离。 在薄膜器件中，在板状基体的一个主表面上形成导体图案，并且用树脂膜覆盖导体图案。 该导体图案具有设置在基座的主表面上的底面，面向底面并远离基座的主表面的顶面以及连接底面和顶面的两个侧面。 在这些侧面形成有凹部，绝缘膜延伸到凹部。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20090184336A1

    公开(公告)日：2009-07-23

    申请号：US12170503

    申请日：2008-07-10

    申请人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

    发明人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.

    摘要翻译： 一种半导体发光器件包括：半导体层; 半导体层上的绝缘膜，并具有开口; 绝缘膜上的多层粘合剂层; 以及通过开口与半导体层接触并与多层粘合剂层接触的Pd电极。 多层粘合剂层包括顶部的Au层和在Au层和Pd电极之间的界面处的Au和Pd的合金。

    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20080211062A1

    公开(公告)日：2008-09-04

    申请号：US11681235

    申请日：2007-03-02

    申请人： Katsuomi SHIOZAWA ,  Kyozo Kanamoto ,  Kazushige Kawasaki ,  Hitoshi Sakuma ,  Yuji Abe

    发明人： Katsuomi SHIOZAWA ,  Kyozo Kanamoto ,  Kazushige Kawasaki ,  Hitoshi Sakuma ,  Yuji Abe

    IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/283

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.

    摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。

    Piezoelectric device having first and second non-metal electroconductive intermediate films
    7.
    发明授权
    Piezoelectric device having first and second non-metal electroconductive intermediate films 有权
    具有第一和第二非金属导电中间膜的压电器件

    公开(公告)号：US08994251B2

    公开(公告)日：2015-03-31

    申请号：US13566468

    申请日：2012-08-03

    申请人： Katsuyuki Kurachi ,  Yasuhiro Aida ,  Hitoshi Sakuma ,  Kazuhiko Maejima

    发明人： Katsuyuki Kurachi ,  Yasuhiro Aida ,  Hitoshi Sakuma ,  Kazuhiko Maejima

    IPC分类号： H01L41/047

    CPC分类号： H01L41/0478 ,  B41J2/14233 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/313 ,  H01L41/316

    摘要： A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film.

    摘要翻译： 根据本发明的压电装置设置有第一电极膜，设置在第一电极膜上的第一非金属导电中间膜，设置在第一非金属导电中间膜上的压电膜，设置在第一非金属导电中间膜上的第二非金属导电中间膜 压电膜和设置在第二非金属导电中间膜上的第二电极膜。 第一非金属导电性中间膜的线膨胀系数比第一电极膜和压电膜的线膨胀系数大，第二非金属导电性中间膜的线膨胀系数比第二电极膜和压电膜的线膨胀系数大 。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体发光元件及其制造方法

    公开(公告)号：US20110193126A1

    公开(公告)日：2011-08-11

    申请号：US12911772

    申请日：2010-10-26

    申请人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

    发明人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

    IPC分类号： H01L33/40 ,  H01L21/283

    CPC分类号： H01S5/32341 ,  H01L33/20 ,  H01L33/385 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22

    摘要： A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion.

    摘要翻译： 半导体发光元件包括：半导体衬底; 半导体层叠结构，其包括依次层叠在所述半导体基板上的第一导电型半导体层，有源层，第二导电型半导体层和接触层; 半导体层叠结构的上部的脊部; 邻接所述脊部的相对侧的通道部分; 邻接通道部分的相对侧的平台部分，以及通道部分，夹住所述脊部; 覆盖所述通道部分并且在所述脊部和所述平台部分上具有开口的第一绝缘膜; 第一绝缘膜上的单层粘合剂层; 脊状部分上的Pd电极和单层粘合剂层的一部分，并且电连接到脊部的接触层; 以及覆盖单层粘合剂层的Pd电极未被覆盖的部分的第二绝缘层和露台部。