公开(公告)号：US07125812B2

公开(公告)日：2006-10-24

申请号：US10500150

申请日：2003-01-14

申请人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

发明人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

IPC分类号： H01L21/31

CPC分类号： C23C16/45561 ,  C23C16/308 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/452

摘要： A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

摘要翻译： CVD装置（2）形成作为氧化硅膜，氮化硅膜或氮氧化硅膜的绝缘膜。 CVD装置包括：容纳目标基板（W）的处理室（8）;将处理室中的目标基板支撑的支撑构件（20）;加热器（12），用于加热由支撑构件支撑的目标基板 ，用于对处理室进行真空排气的排气部（39），以及向处理室供给气体的供给部（40）。 供给部包括供给硅烷族气体的第一气体的第一回路（42），供给作为氧化气体的第二气体的第二回路（44），氮化气体或氮氧化气体，以及第三回路 （46）供应碳氢化合物气体的第三气体，并且可以将第一，第二和第三气体供应在一起。

公开(公告)号：US20050095770A1

公开(公告)日：2005-05-05

申请号：US10500150

申请日：2003-01-14

申请人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

发明人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/452 ,  H01L21/8238

CPC分类号： C23C16/45561 ,  C23C16/308 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/452

摘要： A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

摘要翻译： CVD装置（2）形成作为氧化硅膜，氮化硅膜或氮氧化硅膜的绝缘膜。 CVD装置包括：容纳目标基板（W）的处理室（8）;将处理室中的目标基板支撑的支撑构件（20）;加热器（12），用于加热由支撑构件支撑的目标基板 ，用于对处理室进行真空排气的排气部（39），以及向处理室供给气体的供给部（40）。 供给部包括供给硅烷族气体的第一气体的第一回路（42），供给作为氧化气体的第二气体的第二回路（44），氮化气体或氮氧化气体，以及第三回路 （46）供应碳氢化合物气体的第三气体，并且可以将第一，第二和第三气体供应在一起。

公开(公告)号：US4623751A

公开(公告)日：1986-11-18

申请号：US617724

申请日：1984-06-06

申请人： Yasuo Kishi ,  Hiroyuki Taniguchi ,  Souichi Sakai ,  Hitoshi Katoh ,  Atsuo Mizukami

发明人： Yasuo Kishi ,  Hiroyuki Taniguchi ,  Souichi Sakai ,  Hitoshi Katoh ,  Atsuo Mizukami

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/0224 ,  H01L27/14 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/046 ,  Y02E10/50

摘要： A method of manufacturing a photovoltaic device having a plurality of a photoelectric converting regions formed on an insulating surface of a substrate electrically connected in series, comprises the steps of dividing a first large area electrode layer on an insulating surface of a substrate into a plurality of first electrode layer portions corresponding to a plurality of photoelectric converting regions, depositing in succession a film-like photoelectric semiconductor layer and a second electrode layer lying continuously on the divided first electrode layers, and removing portions of the photoelectric semiconductor layer and the second electrode layer formed continuously to divide them into a plurality of portions corresponding to the plurality of the photoelectric converting regions.

摘要翻译： 一种制造具有多个形成在串联电连接的基板的绝缘表面上的光电转换区域的光电器件的方法包括以下步骤：将基板的绝缘表面上的第一大面积电极层划分为多个 对应于多个光电转换区域的第一电极层部分，连续地沉积在划分的第一电极层上的膜状光电半导体层和第二电极层，以及去除光电半导体层和第二电极层的部分 连续地形成为将其分割成与多个光电转换区域对应的多个部分。

公开(公告)号：US5305313A

公开(公告)日：1994-04-19

申请号：US908371

申请日：1992-07-06

申请人： Hitoshi Katoh

发明人： Hitoshi Katoh

IPC分类号： H04M3/38 ,  H04M3/42 ,  H04M3/533 ,  H04M11/00 ,  H04Q3/545 ,  H04Q3/58 ,  H04Q11/04 ,  H04L12/12

CPC分类号： H04Q11/0457 ,  H04M3/533 ,  H04Q2213/091 ,  H04Q2213/103 ,  H04Q2213/14 ,  H04Q2213/27

摘要： An electronic switching system having ISDN interfaces on the extension side stores in a table the attributes of a terminal under communication using the ISDN interface. When there is another incoming call to the ISDN interface, the system waits for a response to the incoming call by the terminals connected to the ISDN. When no response is received, the switching system creates a disconnection reason message on the basis of the result of checking the terminal attributes in the table against the attributes of the incoming call. This disconnection reason message is then communicated to the calling terminal.

摘要翻译： 在扩展侧具有ISDN接口的电子交换系统使用ISDN接口在通信中存储终端的属性。 当ISDN接口有另一个呼入时，系统会等待ISDN连接的终端对来电的响应。 当没有接收到响应时，交换系统基于根据来电的属性检查表中的终端属性的结果来创建断开原因消息。 然后将该断开原因消息传送到主叫终端。

公开(公告)号：US08298341B2

公开(公告)日：2012-10-30

申请号：US12431232

申请日：2009-04-28

申请人： Hitoshi Katoh ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

发明人： Hitoshi Katoh ,  Tsuneyuki Okabe ,  Kohichi Orito ,  Takashi Chiba

IPC分类号： C23G1/02

CPC分类号： C03C23/0075

摘要： A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

摘要翻译： 一种方法用于去除沉积在选自由用于半导体工艺的垂直热处理装置的反应管，晶片舟和隔热圆柱体组成的组中的石英构件上的金属污染物。 该方法包括获得未连接到垂直热处理装置的石英构件; 然后，使用稀释的氢氟酸进行稀释的氢氟酸清洗来清洗石英部件; 然后，使用净化水进行清洗石英部件的第一净化水清洗; 然后用盐酸进行清洗石英部件的盐酸清洗; 然后进行使用净化水清洗石英部件的第二净化水清洗。

公开(公告)号：US20090186479A1

公开(公告)日：2009-07-23

申请号：US12318971

申请日：2009-01-13

申请人： Tsuneyuki Okabe ,  Hitoshi Katoh ,  Junya Hiraka ,  Hiroyuki Kikuchi

发明人： Tsuneyuki Okabe ,  Hitoshi Katoh ,  Junya Hiraka ,  Hiroyuki Kikuchi

IPC分类号： H01L21/285 ,  C23C16/46 ,  C23C16/52

CPC分类号： H01L21/02186 ,  C23C16/409 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45531 ,  C23C16/52

摘要： A semiconductor processing system including a semiconductor processing apparatus and a gas supply apparatus for supplying a process gas into the semiconductor processing apparatus includes a control section configured to control an operation of a pressure adjusting mechanism for adjusting the pressure inside a vaporizing chamber. The control section is preset to cause the pressure inside the vaporizing chamber to fall within a predetermined pressure range with reference to a pressure detection value obtained by a pressure detector. The predetermined pressure range is defined by an upper limit lower than a first limit value, at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, and a lower limit higher than a second limit value, at which vaporization of the liquid material starts being unstable and the pressure inside the vaporizing chamber starts pulsating movement due to a decrease in the pressure.

摘要翻译： 包括半导体处理装置和用于向半导体处理装置供给处理气体的气体供给装置的半导体处理系统包括：控制部，被配置为控制用于调节蒸发室内的压力的压力调节机构的操作。 参照由压力检测器得到的压力检测值，控制部被预先设定为使蒸发室内的压力落入规定的压力范围内。 预定压力范围由低于第一极限值的上限限定，在第一极限值下，液体材料的蒸发由于压力的增加而被抑制，并且比第二极限值高的第二极限值的下限， 液体材料开始不稳定，并且由于压力的降低，蒸发室内部的压力开始脉动运动。