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公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译： 提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。 显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜 和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。
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公开(公告)号：US20080070351A1
公开(公告)日：2008-03-20
申请号：US11857481
申请日：2007-09-19
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes: a first step of forming a first resist above the substrate so as to be thicker in the first region than in the second region, the first resist covering the first and second regions and having an opening in the third region; a second step of implanting an impurity to only the third semiconductor in the third region using the first resist as a mask; a third step of thinning the first resist so as to form a second resist that covers the first region and has an opening in each of second and third regions; a fourth step of implanting an impurity to the second and third semiconductor films in the second and third regions simultaneously using the second resist as a mask; and a fifth step of implanting an impurity to the first to third semiconductor films in the first to third regions simultaneously.
摘要翻译： 在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜 区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括：第一步骤，在所述衬底上方形成第一抗蚀剂，使其在所述第一区域中比在所述第二区域中更厚， 第一抗蚀剂覆盖第一和第二区域并且在第三区域中具有开口; 使用第一抗蚀剂作为掩模将杂质注入第三区域中的第三半导体的第二步骤; 第三步骤，使第一抗蚀剂变薄以形成覆盖第一区域并在第二和第三区域中的每一个具有开口的第二抗蚀剂; 第四步骤，使用第二抗蚀剂作为掩模，将杂质注入第二和第三区域中的第二和第三半导体膜; 以及将第一至第三区域中的第一至第三半导体膜同时注入杂质的第五步骤。
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公开(公告)号：US09164275B2
公开(公告)日：2015-10-20
申请号：US13486280
申请日：2012-06-01
IPC分类号： G02B26/00 , G09G5/00 , G09G5/10 , G02B26/02 , G02B26/04 , B81B7/02 , G09G3/34 , B32B3/00 , B81C1/00 , H02N1/00 , B81B3/00
CPC分类号： G02B26/02 , B32B3/00 , B81B3/0062 , B81B7/02 , B81B2201/047 , B81B2203/0307 , B81B2203/0376 , B81C1/00103 , G02B26/04 , G02F2203/12 , G09G3/34 , G09G5/10 , G09G2300/08 , H02N1/006
摘要： A display device includes: a plurality of pixels each having a shutter plate formed and an actuator portion, wherein the actuator portion has a beam portion connected to the shutter plate, a drive electrode causing the beam portion to bend to drive the shutter plate, a first supporting portion supporting the drive electrode and fixed on a substrate, and a second supporting portion supporting the beam portion and fixed on the substrate, at least one of the first supporting portion and the second supporting portion has a planar portion, and a recessed portion formed to be concaved from the planar portion and connected to the substrate, and the recessed portion has a vertically formed portion formed to be inclined substantially vertically from the planar portion, and a portion starting from the vertically formed portion and formed such that the inclination of the portion becomes gentle toward the substrate.
摘要翻译： 显示装置包括：多个像素，每个具有形成的快门板和致动器部分，其中致动器部分具有连接到快门板的光束部分，使光束部分弯曲以驱动快门板的驱动电极， 支撑驱动电极并固定在基板上的第一支撑部分和支撑梁部分并固定在基板上的第二支撑部分，第一支撑部分和第二支撑部分中的至少一个具有平坦部分，并且凹部 形成为从平面部分凹陷并连接到基板，并且凹部具有形成为从平面部分大致垂直地倾斜的垂直形成部分，以及从垂直形成部分开始的部分， 该部分对基板变得柔和。
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公开(公告)号：US07704810B2
公开(公告)日：2010-04-27
申请号：US11857481
申请日：2007-09-19
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes implanting an impurity in the third region so as to form a capacitor.
摘要翻译： 在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜 区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括在第三区域中注入杂质以形成电容器。
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公开(公告)号：US20120087003A1
公开(公告)日：2012-04-12
申请号：US13252536
申请日：2011-10-04
申请人： Daisuke SONODA , Tetsuya Nagata , Masataka Okamoto , Yasukazu Kimura , Toshio Miyazawa , Toshiki Kaneko , Hidekazu Nitta
发明人： Daisuke SONODA , Tetsuya Nagata , Masataka Okamoto , Yasukazu Kimura , Toshio Miyazawa , Toshiki Kaneko , Hidekazu Nitta
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , G02F2001/1676
摘要： A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.
摘要翻译： 通过在由第一基板，第二基板和隔板限定的区域中密封绝缘液体和浮动颗粒来形成像素。 必须减小分隔件的宽度，以便通过放大扁平电极来提高像素的亮度。 在这种情况下，为了保持机械强度，必须减小隔板的高度。 如果隔板的高度减小，则分隔电极的面积变小，因此不能保持记忆效果。 然后将隔板的平面形成为锯齿形，以增加分隔电极的面积。
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公开(公告)号：US08730560B2
公开(公告)日：2014-05-20
申请号：US13252536
申请日：2011-10-04
申请人： Daisuke Sonoda , Tetsuya Nagata , Masataka Okamoto , Yasukazu Kimura , Toshio Miyazawa , Toshiki Kaneko , Hidekazu Nitta
发明人： Daisuke Sonoda , Tetsuya Nagata , Masataka Okamoto , Yasukazu Kimura , Toshio Miyazawa , Toshiki Kaneko , Hidekazu Nitta
CPC分类号： G02F1/167 , G02F2001/1676
摘要： A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.
摘要翻译： 通过在由第一基板，第二基板和隔板限定的区域中密封绝缘液体和浮动颗粒来形成像素。 必须减小分隔件的宽度，以便通过放大扁平电极来提高像素的亮度。 在这种情况下，为了保持机械强度，必须减小隔板的高度。 如果隔板的高度减小，则分隔电极的面积变小，因此不能保持记忆效果。 然后将隔板的平面形成为锯齿形，以增加分隔电极的面积。
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公开(公告)号：US20070097303A1
公开(公告)日：2007-05-03
申请号：US11586541
申请日：2006-10-26
IPC分类号： G02F1/1333
CPC分类号： G02F1/133345 , G02F1/134363 , G02F1/136204 , G02F2201/124
摘要： A liquid crystal display device that includes a first substrate, a second substrate, and a liquid crystal material sandwiched between the first and second substrates. In the device, the first substrate includes an active element, a first insulation film formed above the active element, a first electrode formed above the first insulation film, a second insulation film formed above the first electrode, and a second electrode formed above the second insulation film. The second insulation film is a coating insulation film, the first insulation film has a first contact hole, the second insulation film is formed between the first and second electrodes, and inside of the first contact hole, the second insulation film formed inside of the first contact hole is formed with a second contact hole, the second electrode is a pixel electrode, the second electrode is electrically connected to the active element via the second contact hole, and a retention capacity is formed by the first and second electrodes and the second insulation film. The resulting liquid crystal display device of such a configuration causes no short circuit in a height-different portion between electrodes formed on both sides of an insulation film.
摘要翻译： 一种液晶显示装置，包括夹在第一和第二基板之间的第一基板，第二基板和液晶材料。 在该器件中，第一基板包括有源元件，形成在有源元件上方的第一绝缘膜，形成在第一绝缘膜上方的第一电极，形成在第一电极上方的第二绝缘膜，以及形成在第二绝缘膜上的第二电极 绝缘膜。 第二绝缘膜是涂覆绝缘膜，第一绝缘膜具有第一接触孔，第二绝缘膜形成在第一和第二电极之间，第一绝缘膜的内部形成在第一接触孔的内部， 接触孔形成有第二接触孔，第二电极是像素电极，第二电极经由第二接触孔电连接到有源元件，并且通过第一和第二电极和第二绝缘体形成保持能力 电影。 所得到的这种结构的液晶显示装置在形成在绝缘膜两侧的电极之间的高度不同部分不会发生短路。
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公开(公告)号：US07639331B2
公开(公告)日：2009-12-29
申请号：US11586541
申请日：2006-10-26
IPC分类号： G02F1/1333
CPC分类号： G02F1/133345 , G02F1/134363 , G02F1/136204 , G02F2201/124
摘要： A liquid crystal display device that includes a first substrate, a second substrate, and a liquid crystal material sandwiched between the first and second substrates. In the device, the first substrate includes an active element, a first insulation film formed above the active element, a first electrode formed above the first insulation film, a second insulation film formed above the first electrode, and a second electrode formed above the second insulation film. The second insulation film is a coating insulation film, the first insulation film has a first contact hole, the second insulation film is formed between the first and second electrodes, and inside of the first contact hole, the second insulation film formed inside of the first contact hole is formed with a second contact hole, the second electrode is a pixel electrode, the second electrode is electrically connected to the active element via the second contact hole, and a retention capacity is formed by the first and second electrodes and the second insulation film. The resulting liquid crystal display device of such a configuration causes no short circuit in a height-different portion between electrodes formed on both sides of an insulation film.
摘要翻译： 一种液晶显示装置，包括夹在第一和第二基板之间的第一基板，第二基板和液晶材料。 在该器件中，第一基板包括有源元件，形成在有源元件上方的第一绝缘膜，形成在第一绝缘膜上方的第一电极，形成在第一电极上方的第二绝缘膜，以及形成在第二绝缘膜上的第二电极 绝缘膜。 第二绝缘膜是涂覆绝缘膜，第一绝缘膜具有第一接触孔，第二绝缘膜形成在第一和第二电极之间，第一绝缘膜的内部形成在第一接触孔的内部， 接触孔形成有第二接触孔，第二电极是像素电极，第二电极经由第二接触孔电连接到有源元件，并且由第一和第二电极和第二绝缘体形成保持能力 电影。 所得到的这种结构的液晶显示装置在形成在绝缘膜两侧的电极之间的高度不同部分不会发生短路。
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公开(公告)号：US07407853B2
公开(公告)日：2008-08-05
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L21/8242
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译： 本发明提供一种能够实现制造过程减少的显示装置的制造方法。 在制造方法中，在衬底的上表面上形成半导体层。 在半导体层的上表面上形成绝缘膜。 使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。 在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为 小于第一区域中的绝缘膜的膜厚度。
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公开(公告)号：US08456401B2
公开(公告)日：2013-06-04
申请号：US12222339
申请日：2008-08-07
申请人： Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
发明人： Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
IPC分类号： G09G3/36 , H01L31/00 , H01L31/036
CPC分类号： H01L29/78618 , G02F1/13454 , G02F2001/13685 , G02F2202/104 , H01L27/12 , H01L29/78645 , H01L29/78696
摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.
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