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公开(公告)号：US20090218574A1
公开(公告)日：2009-09-03
申请号：US12379095
申请日：2009-02-12
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.
摘要翻译： 显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层 绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极， 在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。
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公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译： 提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。 显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜 和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。
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公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译： 一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层 所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘 第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠 与栅电极连接，连接部位在第二区域。
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公开(公告)号：US08148726B2
公开(公告)日：2012-04-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/013
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译： 一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层 所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘 第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠 与栅电极连接，连接部位在第二区域。
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公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US09128286B2
公开(公告)日：2015-09-08
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US20090095957A1
公开(公告)日：2009-04-16
申请号：US12285820
申请日：2008-10-15
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/66765
摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.
摘要翻译： 提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。 一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅 层形成在第一非晶硅层之上。
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公开(公告)号：US20100096632A1
公开(公告)日：2010-04-22
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译： 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。
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公开(公告)号：US08368077B2
公开(公告)日：2013-02-05
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译： 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。
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公开(公告)号：US08110833B2
公开(公告)日：2012-02-07
申请号：US12536645
申请日：2009-08-06
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/336 , H01L33/00
CPC分类号： H01L29/78621 , H01L29/458
摘要： A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.
摘要翻译： 显示装置包括：透明基板; 层叠在透明基板上的栅电极; 叠层在栅电极上方并与栅电极一起构成薄膜晶体管的半导体膜; 源电极和漏极形成在半导体膜上方; 堆叠在源电极和半导体膜之间以及漏电极和半导体膜之间的绝缘膜; 以及形成在绝缘膜中的接触孔，以便将源电极和漏电极与半导体膜连接。 半导体膜包括至少位于接触孔下方并与源电极连接的连接区域以及至少位于接触孔下方并与漏电极连接的连接区域，并将杂质注入 连接区域。
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