公开(公告)号：US07619251B2

公开(公告)日：2009-11-17

申请号：US11440180

申请日：2006-05-25

申请人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

发明人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/78603

摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.

摘要翻译： 用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。 具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。 没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。 由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

公开(公告)号：US20060270130A1

公开(公告)日：2006-11-30

申请号：US11440180

申请日：2006-05-25

申请人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

发明人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

IPC分类号： H01L21/84 ,  H01L29/76

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/78603

摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.

摘要翻译： 在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。 每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。 在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。 在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。 在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。 用CW激光束照射除基板切断位置CUT附近的基板GLS。 衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。 因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

公开(公告)号：US20080023704A1

公开(公告)日：2008-01-31

申请号：US11782701

申请日：2007-07-25

申请人： TAKESHI NODA ,  Takahiro Kamo ,  Eiji Oue ,  Mutsuko Hatano ,  Takeshi Sato

发明人： TAKESHI NODA ,  Takahiro Kamo ,  Eiji Oue ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L29/04 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1248 ,  H01L27/1285

摘要： The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.

摘要翻译： 本发明通过抑制带状伪单晶在通过辐射光束的方向控制而连续生长时，通过抑制熔融半导体的聚集来获得使用高性能薄膜晶体管的面板内系统显示装置 在扫描时对由硅制成的半导体膜进行连续振荡激光。 显示装置包括形成在绝缘基板上的氮化硅膜，形成在氮化硅膜上的氧化硅膜，形成在氧化硅膜上的半导体膜，以及使用该半导体膜的薄膜晶体管。 这里，氧化硅膜由使用SiH 4 N 2和N 2 O作为原料气体形成的第一氧化硅膜和使用TEOS形成的第二氧化硅膜构成 气体作为原料气体，半导体膜由具有带状粒子的假单晶构成。

公开(公告)号：US20080173871A1

公开(公告)日：2008-07-24

申请号：US11939073

申请日：2007-11-13

申请人： Takeshi Noda ,  Takahiro Kamo ,  Hideaki Shimmoto

发明人： Takeshi Noda ,  Takahiro Kamo ,  Hideaki Shimmoto

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/42384 ,  H01L29/4908

摘要： In a display device which includes MIS transistors having semiconductor layers thereof formed of an amorphous semiconductor and MIS transistors having semiconductor layers thereof including a polycrystalline semiconductor, the present invention can enhance crystallinity of the semiconductor layers formed of the polycrystalline semiconductor when the respective MIS transistors adopt the bottom gate structure. In the display device, first MIS transistors formed in a first region of a substrate and second MIS transistors formed in a second region different from the first region respectively have a gate electrode thereof between the substrate and the semiconductor layer, the first MIS transistor has the semiconductor layer thereof formed of only the amorphous semiconductor, the second MIS transistor has the semiconductor layer thereof including the polycrystalline semiconductor, and a gate electrode of the second MIS transistor has a thickness smaller than a thickness of a gate electrode of the first MIS transistor.

摘要翻译： 在包括由非晶半导体形成的半导体层的MIS晶体管的显示装置和具有包含多晶半导体的半导体层的MIS晶体管的本发明中，当各个MIS晶体管采用时，本发明可提高由多晶半导体形成的半导体层的结晶度 底栅结构。 在显示装置中，形成在基板的第一区域的第一MIS晶体管和形成在与第一区域不同的第二区域的第二MIS晶体管分别在基板和半导体层之间具有栅电极，第一MIS晶体管具有 半导体层仅由非晶半导体形成，第二MIS晶体管的半导体层包括多晶半导体，第二MIS晶体管的栅电极的厚度小于第一MIS晶体管的栅电极的厚度。

公开(公告)号：US20090230397A1

公开(公告)日：2009-09-17

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US08421940B2

公开(公告)日：2013-04-16

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： G02F1/136

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US08319225B2

公开(公告)日：2012-11-27

申请号：US12611951

申请日：2009-11-04

申请人： Takahiro Kamo ,  Takeshi Noda

发明人： Takahiro Kamo ,  Takeshi Noda

IPC分类号： H01L33/00

CPC分类号： H01L27/1214 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78678 ,  H01L29/78696

摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.

摘要翻译： 显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。 这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。 在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

公开(公告)号：US20080176351A1

公开(公告)日：2008-07-24

申请号：US11843693

申请日：2007-08-23

申请人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

发明人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

IPC分类号： H01L21/00

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/04

摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.

摘要翻译： 本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。 在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤 能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤 。 第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。 第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。

公开(公告)号：US07723135B2

公开(公告)日：2010-05-25

申请号：US12022201

申请日：2008-01-30

申请人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

发明人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  B23K26/032 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L27/1214 ,  H01L27/1285

摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.

摘要翻译： 在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件 的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。 在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值 通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E： 在线形激光束的横截面的所有位置中确定E /√{平方根超过（）}（W）。 由于适合于硅膜的横向晶体生长的激光功率与E /√{平方根超过（）}（W）具有密切相关性，所以将该值用作本发明上述的评估结果。

公开(公告)号：US20080188012A1

公开(公告)日：2008-08-07

申请号：US12022201

申请日：2008-01-30

申请人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

发明人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

IPC分类号： H01L21/66

CPC分类号： H01L21/02691 ,  B23K26/032 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L27/1214 ,  H01L27/1285

摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.

摘要翻译： 在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件 的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。 在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值 通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E： 在线性激光束的横截面的所有位置中确定E /√{（W））的平方根，由于适合于硅膜的横向晶体生长的激光功率与 E（√）（（W））的平方根，将该值用作本发明上述的评价结果​​。