公开(公告)号：US07723135B2

公开(公告)日：2010-05-25

申请号：US12022201

申请日：2008-01-30

申请人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

发明人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  B23K26/032 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L27/1214 ,  H01L27/1285

摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.

摘要翻译： 在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件 的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。 在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值 通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E： 在线形激光束的横截面的所有位置中确定E /√{平方根超过（）}（W）。 由于适合于硅膜的横向晶体生长的激光功率与E /√{平方根超过（）}（W）具有密切相关性，所以将该值用作本发明上述的评估结果。

公开(公告)号：US20080188012A1

公开(公告)日：2008-08-07

申请号：US12022201

申请日：2008-01-30

申请人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

发明人： Akio Yazaki ,  Mikio Hongo ,  Takeshi Sato ,  Takahiro Kamo

IPC分类号： H01L21/66

CPC分类号： H01L21/02691 ,  B23K26/032 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L27/1214 ,  H01L27/1285

摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.

摘要翻译： 在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件 的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。 在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值 通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E： 在线性激光束的横截面的所有位置中确定E /√{（W））的平方根，由于适合于硅膜的横向晶体生长的激光功率与 E（√）（（W））的平方根，将该值用作本发明上述的评价结果​​。

公开(公告)号：US07619251B2

公开(公告)日：2009-11-17

申请号：US11440180

申请日：2006-05-25

申请人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

发明人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/78603

摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.

摘要翻译： 用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。 具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。 没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。 由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

公开(公告)号：US20060270130A1

公开(公告)日：2006-11-30

申请号：US11440180

申请日：2006-05-25

申请人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

发明人： Takeshi Sato ,  Takahiro Kamo ,  Takeshi Noda

IPC分类号： H01L21/84 ,  H01L29/76

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/78603

摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.

摘要翻译： 在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。 每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。 在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。 在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。 在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。 用CW激光束照射除基板切断位置CUT附近的基板GLS。 衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。 因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

公开(公告)号：US20080023704A1

公开(公告)日：2008-01-31

申请号：US11782701

申请日：2007-07-25

申请人： TAKESHI NODA ,  Takahiro Kamo ,  Eiji Oue ,  Mutsuko Hatano ,  Takeshi Sato

发明人： TAKESHI NODA ,  Takahiro Kamo ,  Eiji Oue ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L29/04 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1248 ,  H01L27/1285

摘要： The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.

摘要翻译： 本发明通过抑制带状伪单晶在通过辐射光束的方向控制而连续生长时，通过抑制熔融半导体的聚集来获得使用高性能薄膜晶体管的面板内系统显示装置 在扫描时对由硅制成的半导体膜进行连续振荡激光。 显示装置包括形成在绝缘基板上的氮化硅膜，形成在氮化硅膜上的氧化硅膜，形成在氧化硅膜上的半导体膜，以及使用该半导体膜的薄膜晶体管。 这里，氧化硅膜由使用SiH 4 N 2和N 2 O作为原料气体形成的第一氧化硅膜和使用TEOS形成的第二氧化硅膜构成 气体作为原料气体，半导体膜由具有带状粒子的假单晶构成。

公开(公告)号：US11128228B2

公开(公告)日：2021-09-21

申请号：US16813465

申请日：2020-03-09

申请人： Takumi Hyugaji ,  Takeshi Sato ,  Minoru Kado

发明人： Takumi Hyugaji ,  Takeshi Sato ,  Minoru Kado

IPC分类号： H02M3/335

摘要： A switching power supply device includes a transformer for voltage conversion, a synchronous rectification MOS transistor, and a secondary side control circuit. The synchronous rectification MOS transistor is connected in series to a secondary side coil of the transformer. The secondary side control circuit performs on/off control of the synchronous rectification MOS transistor based on a drain voltage of the synchronous rectification MOS transistor. The secondary side control circuit includes a peak period detection circuit and a determination reference voltage generation circuit. The peak period detection circuit detects a peak period of the drain voltage. The determination reference voltage generation circuit generates a reference voltage to be used as a reference for determining the peak period based on a voltage in the peak period. The peak period detection circuit detects the peak period based on the drain voltage and on the reference voltage.

公开(公告)号：US09497859B2

公开(公告)日：2016-11-15

申请号：US13497555

申请日：2010-09-06

申请人： Mikiko Hojo ,  Shinya Yoneda ,  Naonobu Yoshi ,  Takeshi Sato ,  Kisei Matsumoto

发明人： Mikiko Hojo ,  Shinya Yoneda ,  Naonobu Yoshi ,  Takeshi Sato ,  Kisei Matsumoto

IPC分类号： H01B1/02 ,  H01B1/04 ,  H05K1/09 ,  H05K3/12 ,  B22F1/00 ,  B22F3/105 ,  B82Y30/00

CPC分类号： B22F1/0022 ,  B22F1/0074 ,  B22F3/1055 ,  B22F2003/1054 ,  B82Y30/00 ,  C23C16/455 ,  H05K1/097 ,  H05K3/125 ,  Y02P10/295

摘要： Provided is a metal microparticle dispersion including metal microparticles, a polymeric dispersant and a dispersion medium, wherein an average primary particle diameter of the metal microparticles is 0.001 to 0.5 μm; the polymeric dispersant has a polyester skeleton in at least one of a principal chain and a side chain thereof; or the polymeric dispersant has a polyether skeleton in at least one of a principal chain and a side chain thereof; and a content of the above polymeric dispersant is 0.1 to 100 parts by mass based on a content of 100 parts by mass of the metal microparticles. Further, provided is a production process for an electrically conductive substrate, and an electrically conductive substrate produced by the above production process is provided.

摘要翻译： 提供一种金属微粒分散体，其包含金属微粒，高分子分散剂和分散介质，其中金属微粒的平均一次粒径为0.001〜0.5μm; 聚合物分散剂在其主链和侧链中的至少一个中具有聚酯骨架; 或者聚合物分散剂在其主链和侧链中的至少一个中具有聚醚骨架; 上述聚合物分散剂的含量相对于100质量份金属微粒的含量为0.1〜100质量份。 此外，提供了导电基板的制造方法，并且提供了通过上述制造方法制造的导电基板。

公开(公告)号：US09335254B2

公开(公告)日：2016-05-10

申请号：US14240437

申请日：2012-08-27

申请人： Fumiaki Shimaoka ,  Takeshi Sato ,  Hiroshi Konishi ,  Takashi Inoue

发明人： Fumiaki Shimaoka ,  Takeshi Sato ,  Hiroshi Konishi ,  Takashi Inoue

IPC分类号： G06K9/74 ,  G01N21/25 ,  G07D7/12 ,  G01N21/21

CPC分类号： G01N21/25 ,  G01N21/21 ,  G07D7/1205 ,  G07D7/121

摘要： A paper sheet recognition apparatus that recognizes a paper sheet based on optical characteristics of the paper sheet is proposed. The paper sheet recognition apparatus includes at least one light source that emits a light toward the paper sheet; a light-guiding member that receives any of reflected lights reflected from plural regions on the paper sheet and transmitted lights that have passed through plural regions on the paper sheet because of emission of the light on the paper sheet from the light source, condenses the received lights, and outputs the condensed light from a light outputting section; an optical processing unit that generates spectral distribution from the condensed light output from the light outputting section of the light-guiding member; and a recognition processing unit that recognizes the paper sheet based on a feature of the spectral distribution generated by the optical processing unit.

摘要翻译： 提出了一种基于纸张的光学特性识别纸张的纸张识别装置。 纸张识别装置包括向纸张发射光的至少一个光源; 由于从光源发射纸张上的光，接收从纸张上的多个区域反射的任何反射光和已经通过纸张上的多个区域的透射光的导光部件， 点亮并输出来自光输出部的聚光; 光学处理单元，其从从所述导光构件的光输出部输出的凝结光产生光谱分布; 以及识别处理单元，其基于由所述光学处理单元生成的频谱分布的特征来识别所述纸张。

公开(公告)号：US09238350B2

公开(公告)日：2016-01-19

申请号：US14124635

申请日：2012-06-06

申请人： Katsuo Kitsu ,  Kunihiko Shibusawa ,  Takeshi Sato

发明人： Katsuo Kitsu ,  Kunihiko Shibusawa ,  Takeshi Sato

IPC分类号： C23C14/06 ,  B32B9/04 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  C23C28/04 ,  B05D5/08

CPC分类号： B32B9/04 ,  B05D5/083 ,  B05D2202/25 ,  C23C14/06 ,  C23C14/0605 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  C23C28/046 ,  Y10T428/30

摘要： One object is to provide a method for providing a water- and oil-repellent layer on an amorphous carbon film with excellent fixity. A method according to an embodiment of the present disclosure includes the steps of: preparing a substrate; providing, directly or indirectly on the substrate, an amorphous carbon film layer containing silicon and nitrogen in at least a surface thereof; and providing a water- and oil-repellent layer containing fluorine on the amorphous carbon film layer via a coupling agent capable of forming, with the amorphous carbon film layer, hydrogen bonds based on polarity and/or —O-M bonds (M is any one element selected from the group consisting of Si, Ti, Al, and Zr) by condensation reaction with functional groups of the amorphous carbon film.

摘要翻译： 一个目的是提供一种在非晶碳膜上提供具有优异固定性的拒水拒油层的方法。 根据本公开的实施例的方法包括以下步骤：准备衬底; 直接或间接提供在至少其表面上含有硅和氮的无定形碳膜层; 并且通过能够与无定形碳膜层形成基于极性和/或-OM键的氢键的偶联剂，在非晶碳膜层上提供含有氟的防水防油层（M是任何一种元素 通过与无定形碳膜的官能团的缩合反应，选自Si，Ti，Al和Zr组成的组。

公开(公告)号：US09132609B2

公开(公告)日：2015-09-15

申请号：US13582731

申请日：2011-03-03

申请人： Kunihiko Shibusawa ,  Takeshi Sato

发明人： Kunihiko Shibusawa ,  Takeshi Sato

IPC分类号： B32B9/00 ,  B32B9/04 ,  C01B31/02 ,  C23C16/26 ,  B32B37/16

CPC分类号： C23C16/26 ,  B32B9/04 ,  B32B37/16 ,  C01B32/05 ,  Y10T156/10 ,  Y10T428/30

摘要： A method for fixation, onto a layer comprising an amorphous carbon film and provided on a base material, of a layer comprising a material condensation-reacting with hydroxyl groups on a surface of the amorphous carbon film, whereby, in the layer comprising an amorphous carbon film and provided on the base material, the amorphous carbon film can have a holding power which is strong enough to fix the layer comprising a material condensation-reacting with a hydroxyl group on the surface of the amorphous carbon film and can have uniformity of the holding power. Si and O are added into the layer comprising an amorphous carbon film to thereby improve adhesion durability and binding uniformity of the layer comprising a material condensation-reacting with a hydroxyl group. Particularly, by using a fluorine-based silane coupling agent, it is possible to impart high functions such as water repellency/oil repellency, abrasion resistance, chemical resistance, low friction properties and non-tackiness to the amorphous carbon film.

摘要翻译： 一种在包含无定形碳膜并在基材上提供的层上固定包含在非晶碳膜的表面上与羟基缩合反应的材料的层的方法，由此在包含无定形碳的层中 膜，并且设置在基材上，非晶碳膜可以具有足够强的保持力，以将包含与羟基缩合反应的材料的层固定在非晶碳膜的表面上，并且可以具有均匀的保持 功率。 将Si和O添加到包含无定形碳膜的层中，从而提高包含与羟基缩合反应的材料的层的粘合耐久性和粘合均匀性。 特别是通过使用氟系硅烷偶联剂，能够赋予无定形碳膜更高的功能性，例如防水性/拒油性，耐磨性，耐化学性，低摩擦性和非粘性。