摘要:
To provide a technology of setting up a call at a high efficiency by a location management device's sending notification of a call setup request to a call control device corresponding to a location of a callee communication device. A call control device connected to a location management device via a network receives a call setup request, searches a location data table for location information of a callee communication device in response to the call setup request, sets up, when the location information is searched out as a result of the search, a call on the basis of the location information, and notifies, when the location information is not searched out as the result of the search, the location management device of the call setup request. The location management device receives notification of a call setup request from the call control device, refers to a storage unit stored with management information specifying which call control device controls the call targeted at each callee communication device, and notifies, of the call setup request, the call control device that controls the call to the callee communication device at which the call setup request is targeted on the basis of the management information referred to.
摘要:
A large-scale wide area network system includes wireless communication base devices respectively configuring access points covering wireless zones subordinate thereto; wireless communication base control devices performing integrated control of the corresponding wireless communication base devices, and managing IP addresses of the wireless communication base control devices of a home location and a visited location as location information of a mobile terminal; in-area location information management devices respectively connected to the corresponding wireless communication base control devices via respective area IP networks corresponding to areas administered by the same common carrier, and managing the IP address of the wireless communication base control device of the home location as the location information of the mobile terminal; and a wide area location information management device hierarchically connected to the in-area location information management devices via a wide area IP network corresponding to a wide area administered by the common carrier, and managing the IP address of the corresponding in-area location information management device as the location information of the mobile terminal.
摘要:
A wireless LAN control device includes a wireless LAN control unit having a transmitting/receiving unit performing communications with a plurality of wireless LAN access points belonging to different user groups and a wireless LAN connection control unit. The wireless connection control unit executes control of transferring a user authentication request received by the transmitting/receiving unit via one of the plurality of wireless LAN access points and given from a wireless LAN terminal belonging to one of the user groups toward an authentication server that should execute an authentication process in response to the user authentication request, and transmitting an authentication result given from the authentication server in response to the user authentication request to the wireless LAN terminal via one of the plurality of wireless LAN access points.
摘要:
The wireless transmission device connected to any one of subnetworks configuring an IP network including a server managing IP addresses, and connecting a mobile terminal to any one of subnetworks, includes an address storage unit storing identifying information specifying the mobile terminal as a sender of a message and the IP address assigned to the mobile terminal from the server, a notifying unit notifying other wireless transmission devices of the stored information, and a proxy response unit responding, as a proxy for the server, when handover occurs, a message containing the IP address, as an assigned IP address, already assigned to the mobile terminal that is the sender of the received message based on the information stored in the address storage unit.
摘要:
To provide a technology capable of accommodating, in parallel, wireless networks of a plurality of user groups having different authentication policies etc and providing a proper communication service in response to an access from a user of each of the user groups. A wireless LAN control device 3 includes a wireless LAN control unit having a transmitting/receiving unit performing communications with a plurality of wireless LAN access points 4 belonging to different user groups and a wireless LAN connection control unit executing control of transferring a user authentication request received by the transmitting/receiving unit via one of the plurality of wireless LAN access points 4 and given from a wireless LAN terminal 5 belonging to one of the user groups toward an authentication server 2 that should execute an authentication process in response to the user authentication request, and transmitting an authentication result given from the authentication server 2 in response to the user authentication request to the wireless LAN terminal 5 via one of the plurality of wireless LAN access points 4.
摘要:
A hybrid exchange which exchanges the STM data to be transmitted periodically to realize an exchange in unit of the ATM data to be transmitted asynchronously includes asynchronous transmission terminal interface as the interface with an STM terminal, an synchronous transmission terminal interface as the interface with an ATM terminal, an ATM exchange interface as the interface with an ATM exchange, a transmitting unit for transmitting the STM time slot and ATM time slot, and a control unit for controlling the interfaces. The synchronous transmission terminal interface assigns the STM data to be transmitted periodically to the STM time slot, while the asynchronous transmission terminal interface assigns the ATM data to be transmitted asynchronously to the ATM time slot. The STM time slot and ATM time slot are identified by the STM/ATM identifier. The STM time slot is stored by multiplexing a plurality of STM data.
摘要:
A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要:
A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要:
Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译:将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面(主表面),以形成氢离子注入层(离子注入损伤层)11。 氢离子注入,形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度,120℃或更高和250℃或更低(低于支撑衬底的熔点)下加热。 此外,施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后,对所得的硅薄膜13的表面进行抛光以去除损坏部分,从而可以制造半导体衬底。 可以提供一种半导体衬底,其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。
摘要:
A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.