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    LANE RECOGNITION DEVICE
    1.
    发明申请
    LANE RECOGNITION DEVICE 有权
    LANE识别装置

    公开(公告)号：US20100231718A1

    公开(公告)日：2010-09-16

    申请号：US12715898

    申请日：2010-03-02

    申请人： Takuma NAKAMORI ,  Tomoyoshi AOKI ,  Jun TANAKA ,  Sachio KOBAYASHI

    发明人： Takuma NAKAMORI ,  Tomoyoshi AOKI ,  Jun TANAKA ,  Sachio KOBAYASHI

    IPC分类号： H04N7/18

    CPC分类号： G06K9/00798

    摘要： The lane mark recognition device is equipped with a lane mark detecting unit which executes a lane mark detection process in each predetermined control cycle, and adds a detection presence/absence data to a ring buffer, a detection presence/absence data addition inhibiting unit which inhibits addition of the detection presence/absence data to the ring buffer when the vehicle is traveling in the intersection, and a lane mark position recognizing unit which recognizes a relative position of the vehicle and the lane mark, when the lane mark is detected in the situation where a lane mark detection rate calculated from the data of the ring buffer is higher than a reliability threshold value.

    摘要翻译： 车道标识识别装置配备有车道标识检测单元，其在每个预定控制周期中执行车道标记检测处理，并将检测有/无数据添加到环形缓冲器，检测有无数据添加禁止单元，其抑制 当车辆在交叉路口行驶时，将检测有无数据加到环形缓冲器;以及车道标识位置识别单元，其在该情况下检测到车道标记时识别车辆和车道标记的相对位置 其中根据环形缓冲器的数据计算的车道标记检测率高于可靠性阈值。

    LIQUID CRYSTAL DISPLAY DEVICE WITH INPUT FUNCTION
    2.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE WITH INPUT FUNCTION 有权
    具有输入功能的液晶显示装置

    公开(公告)号：US20100214260A1

    公开(公告)日：2010-08-26

    申请号：US12687899

    申请日：2010-01-15

    申请人： Jun TANAKA ,  Shinji Sekiguchi ,  Norio Mamba

    发明人： Jun TANAKA ,  Shinji Sekiguchi ,  Norio Mamba

    IPC分类号： G06F3/045

    CPC分类号： G06F3/0412 ,  G02F1/13338 ,  G02F1/134309 ,  G06F2203/04103

    摘要： In a liquid crystal display device having a built-in capacitive coupling touch sensor, a pair of facing transparent substrates sandwich a liquid crystal layer 113 and a liquid crystal display circuit for driving liquid crystal using a lateral electrical field having a color filter layer 107 is formed on one of the transparent substrates 101 in order to make the touch sensor highly sensitive to change in the capacitance, and a capacitive coupling touch sensor circuit layer 117 is formed on the other substrate 116, on the side opposite to the liquid crystal.

    摘要翻译： 在具有内置电容耦合触摸传感器的液晶显示装置中，一对面对的透明基板夹着液晶层113，并且使用具有滤色器层107的横向电场驱动液晶的液晶显示电路是 形成在一个透明基板101上，以使触摸传感器对电容的变化高度敏感，并且在另一个基板116上，在与液晶相反的一侧上形成电容耦合触摸传感器电路层117。

    PATH GENERATING METHOD, RELAY DEVICE, AND COMPUTER PRODUCT
    3.
    发明申请
    PATH GENERATING METHOD, RELAY DEVICE, AND COMPUTER PRODUCT 有权
    路径生成方法，继电器和计算机产品

    公开(公告)号：US20120207164A1

    公开(公告)日：2012-08-16

    申请号：US13328157

    申请日：2011-12-16

    申请人： Jun TANAKA

    发明人： Jun TANAKA

    IPC分类号： H04L12/56

    CPC分类号： H04L49/3009 ,  H04L45/12 ,  H04L45/28 ,  H04L45/32

    摘要： On a network formed by multiple nodes, a shortest path is generated between an ingress node and an egress node. When a packet is transmitted from the ingress to the egress node, in addition to the packet being transmitted from the port to the shortest path, the packet is flooded from the other ports excluding the port to the shortest path, whereby nodes that are among the nodes forming the network and not on the shortest path automatically generate according to a conventional first-in, first-learned scheme, a path that is shortest in the network excluding the shortest path, i.e., a redundant path that shares no links or nodes with the shortest path. Therefore, the operator can automatically generate a redundant path by merely specifying the ingress node and the egress node.

    摘要翻译： 在由多个节点形成的网络上，在入节点和出口节点之间生成最短路径。 当数据包从入口传送到出口节点时，除了从端口发送到最短路径之外，还将数据包从除端口以外的其他端口淹没到最短路径，由此， 形成网络而不是在最短路径上的节点根据传统的先入先天学习方案自动生成除了最短路径之外的网络中最短的路径，即不共享链路或节点的冗余路径 最短路径。 因此，操作员可以通过仅指定入口节点和出口节点来自动生成冗余路径。

    METHOD OF MANUFACTURING LAYER-STACKED WIRING
    4.
    发明申请
    METHOD OF MANUFACTURING LAYER-STACKED WIRING 有权
    制造层叠布线的方法

    公开(公告)号：US20110053354A1

    公开(公告)日：2011-03-03

    申请号：US12942381

    申请日：2010-11-09

    申请人： Jun TANAKA ,  Hiroshi KANOH

    发明人： Jun TANAKA ,  Hiroshi KANOH

    IPC分类号： H01L21/324 ,  H01L21/20

    CPC分类号： H01L29/4908 ,  H01L29/66757

    摘要： A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.

    摘要翻译： 提供了由微晶硅薄膜和金属薄膜构成的层叠布线，其能够抑制微晶硅薄膜和金属薄膜之间的过度的硅化物形成反应，从而防止薄膜的剥离。 在使用层叠布线的多晶硅TFT（Thin Film Transistor，多晶硅TFT）中，微晶硅薄膜的结构使得其晶粒各自具有薄膜厚度为60％的微晶硅薄膜的长度， 微晶硅薄膜的膜厚更多为15个以下的晶粒总数，或者其晶粒尺寸为50％以下，每个微晶硅薄膜的长度均为50％以下 的微晶硅薄膜的膜厚的总和为构成微晶硅薄膜的晶粒总数的85％以上。

    LAYER-STACKED WIRING AND SEMICONDUCTOR DEVICE USING THE SAME
    5.
    发明申请
    LAYER-STACKED WIRING AND SEMICONDUCTOR DEVICE USING THE SAME 有权
    层叠布线和半导体器件使用它

    公开(公告)号：US20090315183A1

    公开(公告)日：2009-12-24

    申请号：US12490790

    申请日：2009-06-24

    申请人： Jun TANAKA ,  Hiroshi KANOH

    发明人： Jun TANAKA ,  Hiroshi KANOH

    IPC分类号： H01L29/49

    CPC分类号： H01L29/4908 ,  H01L29/66757

    摘要： A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.

    摘要翻译： 提供了由微晶硅薄膜和金属薄膜构成的层叠布线，其能够抑制微晶硅薄膜和金属薄膜之间的过度的硅化物形成反应，从而防止薄膜的剥离。 在使用层叠布线的多晶硅TFT（Thin Film Transistor，多晶硅TFT）中，微晶硅薄膜的结构使得其晶粒各自具有薄膜厚度为60％的微晶硅薄膜的长度， 微晶硅薄膜的膜厚更多为15个以下的晶粒总数，或者其晶粒尺寸为50％以下，每个微晶硅薄膜的长度均为50％以下 的微晶硅薄膜的膜厚的总和为构成微晶硅薄膜的晶粒总数的85％以上。

    Liquid Crystal Display Device and Manufacturing Method for Same
    7.
    发明申请
    Liquid Crystal Display Device and Manufacturing Method for Same 有权
    液晶显示装置及其制造方法

    公开(公告)号：US20100002173A1

    公开(公告)日：2010-01-07

    申请号：US12496695

    申请日：2009-07-02

    申请人： Miharu OTANI ,  Jun TANAKA ,  Kazuhito MASUDA ,  Masaya ADACHI ,  Takato HIRATSUKA

    发明人： Miharu OTANI ,  Jun TANAKA ,  Kazuhito MASUDA ,  Masaya ADACHI ,  Takato HIRATSUKA

    IPC分类号： G02F1/1335 ,  G02F1/13

    CPC分类号： G02F1/133555 ,  G02F1/133528 ,  G02F1/134363

    摘要： An object of the present invention is to increase the dichroic ratio of the built-in polarizing layer in reflective regions so that the display performance improves in a semi-transmission type liquid crystal display device having a transmissive display portion and a reflective display portion. The present invention provides a liquid crystal display device having first and second substrates which face each other with a liquid crystal layer in between, where a transmissive region and a reflective region are formed in each pixel on the above described first substrate, as well as: a reflective layer formed in the above described reflective region on the above described first substrate; a polarizing layer formed on the above described first substrate on the liquid crystal layer side of the above described reflective layer from chromonic liquid crystal molecules; a pixel electrode formed on the above described first substrate on the liquid crystal layer side of the above described reflective layer and electrically connected to a source electrode of a thin film transistor; and a protective layer formed in the reflective region between the above described polarizing layer and the above described pixel electrode which makes contact with the above described polarizing layer.

    摘要翻译： 本发明的目的在于提高反射区域内置的偏振层的分色比，从而在具有透射型显示部和反射型显示部的半透射型液晶显示装置中显示性能提高。 本发明提供一种液晶显示装置，其具有在上述第一基板的各像素中形成有透射区域和反射区域的液晶层彼此面对的第一和第二基板，以及： 在上述第一基板上形成在上述反射区域中的反射层; 在发色液晶分子上形成在上述反射层的液晶层一侧的上述第一基板上的偏光层; 形成在上述反射层的液晶层侧的上述第一基板上的电连接于薄膜晶体管的源电极的像素电极; 以及形成在与上述偏振层接触的上述偏振层和上述像素电极之间的反射区域中的保护层。

    SILICON OXIDE FILM, PRODUCTION METHOD THEREFOR AND SEMICONDUCTOR DEVICE HAVING GATE INSULATION FILM USING THE SAME
    9.
    发明申请
    SILICON OXIDE FILM, PRODUCTION METHOD THEREFOR AND SEMICONDUCTOR DEVICE HAVING GATE INSULATION FILM USING THE SAME 有权
    硅氧烷膜，其制造方法及具有栅绝缘膜的半导体器件

    公开(公告)号：US20080296580A1

    公开(公告)日：2008-12-04

    申请号：US12131249

    申请日：2008-06-02

    申请人： Shigeru MORI ,  Hiroshi TANABE ,  Jun TANAKA

    发明人： Shigeru MORI ,  Hiroshi TANABE ,  Jun TANAKA

    IPC分类号： H05H1/24 ,  H01L29/786

    CPC分类号： H01L29/4908

    摘要： The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO2 in the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)×(peak height) in an infrared absorption spectrum, the integrated intensity of a CO2-attributed peak which appears in the vicinity of a wave number of 2,340 cm−1 is 8E-4 times or more with respect to the integrated intensity of an SiO2-attributed peak which appears in the vicinity of a wave number of 1,060 cm−1.

    摘要翻译： 本发明提供一种作为栅绝缘膜的高性能氧化硅膜和具有优异电特性的半导体器件。 根据本发明的氧化硅膜在膜中包括CO 2，其中当峰的积分强度由红外吸收光谱中的（峰值高度）x（峰高））表示时，积分强度为 出现在2,340cm-1波数附近的二氧化碳归属峰相对于出现在波数为1060cm -1附近的SiO 2归属峰的积分强度为8E-4倍以上， 1。