公开(公告)号：US20060056734A1

公开(公告)日：2006-03-16

申请号：US11224302

申请日：2005-09-13

申请人： Takuma Suzuki ,  Hiroyuki Okamoto

发明人： Takuma Suzuki ,  Hiroyuki Okamoto

IPC分类号： G06K9/32

CPC分类号： H04N1/3935

摘要： An image processor includes an image processing section, an enlargement processing section, and a controller. When image data to be output from an image output section, including a second predetermined number of pixels, to which image processing has been applied, is generated on the basis of image data input to an image data input unit, including a first predetermined number of pixels smaller than the second predetermined number, the controller controls the enlargement processing section to generate image data including a third predetermined number of pixels larger than the first predetermined number and smaller than the second predetermined number, on the basis of the image data input to the image data input unit, including the first predetermined number of pixels; controls the image processing section to apply image processing to the image data including the third predetermined number of pixels, generated by the enlargement processing section; and controls the enlargement processing section to generate the image data including the second predetermined number of pixels, on the basis of the image data including the third predetermined number of pixels, to which the image processing section has applied image processing.

摘要翻译： 图像处理器包括图像处理部分，放大处理部分和控制器。 基于输入到图像数据输入单元的图像数据，生成包括第二预定数量的像素的图像数据的图像数据，该图像数据包括第二预定数量的像素， 小于第二预定数量的像素，则控制器根据输入到第二预定数量的图像数据控制放大处理部分生成包括大于第一预定数量并小于第二预定数量的第三预定数量的像素的图像数据 图像数据输入单元，包括第一预定数量的像素; 控制图像处理部分对由放大处理部分生成的包括第三预定数量的像素的图像数据应用图像处理; 并且控制放大处理部分，基于包括图像处理部分应用了图像处理的第三预定数量的像素的图像数据，生成包括第二预定数量的像素的图像数据。

公开(公告)号：US07650048B2

公开(公告)日：2010-01-19

申请号：US11224302

申请日：2005-09-13

申请人： Takuma Suzuki ,  Hiroyuki Okamoto

发明人： Takuma Suzuki ,  Hiroyuki Okamoto

IPC分类号： G06K9/32 ,  G09G5/00

CPC分类号： H04N1/3935

摘要： An image processor includes an image processing section, an enlargement processing section, and a controller. When image data including a second predetermined number of pixels to be output from an image output section, is generated on the basis of image data including a first predetermined number of pixels smaller than the second predetermined number input to an image data input unit, the controller controls the enlargement processing section to generate image data including a third predetermined number of pixels larger than the first predetermined number and smaller than the second predetermined number. The controller controls the image processing section to apply image processing to the image data including the third predetermined number of pixels. The controller also controls the enlargement processing section to generate the image data including the second predetermined number of pixels on the basis of the image data including the third predetermined number of pixels.

摘要翻译： 图像处理器包括图像处理部分，放大处理部分和控制器。 当基于包括小于输入到图像数据输入单元的第二预定数量的第一预定数量的像素的图像数据生成包括要从图像输出部分输出的第二预定数量的像素的图像数据时，控制器 控制放大处理部分生成包括大于第一预定数量并小于第二预定数量的第三预定数量的像素的图像数据。 控制器控制图像处理部分对包括第三预定数量的像素的图像数据应用图像处理。 控制器还控制放大处理部分，基于包括第三预定数量的像素的图像数据，生成包括第二预定数量的像素的图像数据。

公开(公告)号：US08686436B2

公开(公告)日：2014-04-01

申请号：US13600532

申请日：2012-08-31

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

IPC分类号： H01L29/16

CPC分类号： H01L29/1608 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7802

摘要： According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region.

摘要翻译： 根据一个实施例，半导体器件包括第一半导体区域，第二半导体区域，第三半导体区域，第四半导体区域，绝缘膜，控制电极，第一电极和第二电极。 第一半导体区域包括碳化硅，并且具有第一部分。 第二半导体区域设置在第一半导体区域上，并且包括碳化硅。 第三半导体区域和第四半导体区域设置在第二半导体区域上，并且包括碳化硅。 电极设在膜上。 第二半导体区域具有第一区域和第二区域。 第一区域与第三半导体区域和第四半导体区域接触。 第二区域与第一部分接触。 第一区域的杂质浓度高于第二区域的杂质浓度。

公开(公告)号：US20130240904A1

公开(公告)日：2013-09-19

申请号：US13600532

申请日：2012-08-31

申请人： Hiroshi KONO ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

发明人： Hiroshi KONO ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

IPC分类号： H01L29/16

CPC分类号： H01L29/1608 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7802

摘要： According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region.

摘要翻译： 根据一个实施例，半导体器件包括第一半导体区域，第二半导体区域，第三半导体区域，第四半导体区域，绝缘膜，控制电极，第一电极和第二电极。 第一半导体区域包括碳化硅，并且具有第一部分。 第二半导体区域设置在第一半导体区域上，并且包括碳化硅。 第三半导体区域和第四半导体区域设置在第二半导体区域上，并且包括碳化硅。 电极设在膜上。 第二半导体区域具有第一区域和第二区域。 第一区域与第三半导体区域和第四半导体区域接触。 第二区域与第一部分接触。 第一区域的杂质浓度高于第二区域的杂质浓度。

公开(公告)号：US08012837B2

公开(公告)日：2011-09-06

申请号：US12716403

申请日：2010-03-03

申请人： Johji Nishio ,  Chiharu Ota ,  Takuma Suzuki ,  Hiroshi Kono ,  Makoto Mizukami ,  Takashi Shinohe

发明人： Johji Nishio ,  Chiharu Ota ,  Takuma Suzuki ,  Hiroshi Kono ,  Makoto Mizukami ,  Takashi Shinohe

IPC分类号： H01L21/336 ,  H01L21/425 ,  H01L21/265

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/0495 ,  H01L21/30604 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.

摘要翻译： 提供了即使当使用包括缺陷的碳化硅半导体时也能够实现大规模半导体器件的高产率的半导体器件的制造方法。 制造半导体器件的方法包括：在碳化硅半导体衬底上外延生长碳化硅半导体层的步骤; 抛光所述碳化硅半导体层的表面的步骤; 在抛光步骤之后将杂质离子注入到碳化硅半导体层中的步骤; 进行热处理以活化杂质的步骤; 在进行热处理的步骤之后，在碳化硅半导体层的表面上形成第一热氧化膜的工序; 化学去除第一热氧化膜的步骤; 以及在所述碳化硅半导体膜上形成电极层的步骤。

公开(公告)号：US20090256321A1

公开(公告)日：2009-10-15

申请号：US11995245

申请日：2006-06-12

申请人： Takuma Suzuki ,  Tadashi Tamasho ,  Yutaka Mikuriya

发明人： Takuma Suzuki ,  Tadashi Tamasho ,  Yutaka Mikuriya

IPC分类号： B60G3/26 ,  B60G7/00 ,  B60G3/18

CPC分类号： B60G3/26 ,  B60G7/008 ,  B60G2200/144 ,  B60G2200/18 ,  B60G2200/46 ,  B60G2204/148 ,  B60G2204/422

摘要： [Problem] To control a camber angle to an adequate value by the use of a lateral force acting on a wheel, without causing a displacement of a tire ground contact point.[Means for solution] A suspension device includes a link mechanism replaceable by a first virtual link 11 which, when a lateral force acts at a tire ground contact point, inclines a wheel in a camber angle direction with respect to a vehicle body so as to increase the lateral force, and a second virtual link 12 which is connected virtually and rotatably between the first virtual link 11 and the vehicle body 1 and which is arranged to allow the wheel 2 to move in the up-and-down direction with respect to the vehicle body 1 in accordance with a load variation of the wheel in the up-and-down direction. A rotation center A in the camber angle direction and a rotation center B in the up-and-down direction, of the wheel with respect to the vehicle body are arranged so that a lateral movement amount of the tire ground contact point due to a change in the position of the first virtual link 11 is canceled by a lateral movement amount of the tire ground contact point due to a change in the position of the second virtual link 12.

摘要翻译： [问题]通过使用作用在车轮上的横向力来将外倾角控制到适当的值，而不会引起轮胎地面接触点的位移。 解决方案悬架装置包括可由第一虚拟连杆11替换的连杆机构，当第一虚拟连杆11在侧向力作用于轮胎接地点时，相对于车体以相对于车身角度的方向倾斜车轮， 增加横向力，以及第二虚拟连杆12，其虚拟地和可旋转地连接在第一虚拟连杆11和车身1之间，并且被布置成允许车轮2相对于上下方向移动 根据车轮在上下方向上的负载变化而使车身1。 车轮相对于车身的外倾角方向的旋转中心A和上下方向的旋转中心B被配置为使得轮胎接地点由于变化而产生的横向移动量 由于第二虚拟连杆12的位置的变化，第一虚拟连杆11的位置被轮胎接地点的横向移动量所抵消。

公开(公告)号：US20080002948A1

公开(公告)日：2008-01-03

申请号：US11791083

申请日：2005-11-18

申请人： Hisako Murata ,  Takuma Suzuki ,  Sadahiro Yasura ,  Miki Haneishi ,  Katsumi Hasegawa ,  Naoko Aizaki ,  Yoshihisa Fujinami ,  Masami Takeda ,  Takayuki Sugahara

发明人： Hisako Murata ,  Takuma Suzuki ,  Sadahiro Yasura ,  Miki Haneishi ,  Katsumi Hasegawa ,  Naoko Aizaki ,  Yoshihisa Fujinami ,  Masami Takeda ,  Takayuki Sugahara

IPC分类号： H04N5/91

CPC分类号： H04S1/005 ,  H04R1/1091 ,  H04R5/027

摘要： A video-audio recording and reproducing apparatus (101) has a built-in stereo microphone (21a, 21b) and an external microphone connection terminal (32). The external microphone connection terminal (32) is connected to a binaural microphone (3) to be attached to the ears of a photographer (300). When the binaural microphone (3) is used to collect ambient sounds, an audio signal to be recorded on a recording medium is switched from an audio signal from the built-in stereo microphone (21a, 21b) to a binaural audio signal from the binaural microphone (3). The photographer (300) puts the binaural microphone (3 (31a, 31b)) on his or her ears and collects ambient sounds around the photographer (300) including a sound emanating from an object. The object is photographed with a camera unit (11). The recording medium records the binaural audio signal, a photographed video signal, and a binaural flag signal.

摘要翻译： 视频音频记录和再现装置（101）具有内置立体声麦克风（21a，21b）和外部麦克风连接端子（32）。 外部麦克风连接端子（32）连接到双耳麦克风（3）以附接到摄影师（300）的耳朵。 当双耳麦克风（3）用于收集环境声音时，要记录在记录介质上的音频信号从内置立体声麦克风（21a，21b）的音频信号切换到双耳音频信号 双耳麦克风（3）。 拍摄者（300）将双耳麦克风（3（31a，31b））放在他或她的耳朵上，并收集包围从物体发出的声音的摄影师（300）周围的环境声音。 用相机单元（11）拍摄对象。 记录介质记录双耳音频信号，拍摄的视频信号和双耳标志信号。

公开(公告)号：US20050117812A1

公开(公告)日：2005-06-02

申请号：US10996229

申请日：2004-11-23

申请人： Noriyuki Nishi ,  Hisakazu Kuramoto ,  Takuma Suzuki ,  Minoru Yamamoto

发明人： Noriyuki Nishi ,  Hisakazu Kuramoto ,  Takuma Suzuki ,  Minoru Yamamoto

IPC分类号： G06T9/00 ,  H04N1/41 ,  H04N19/00 ,  H04N19/14 ,  H04N19/196 ,  H04N19/80 ,  H04N19/86 ,  G06K9/36

CPC分类号： H04N19/117 ,  H04N19/176 ,  H04N19/186 ,  H04N19/527 ,  H04N19/60

摘要： An image noise reducing method that can properly reduce both block noise and mosquito noise without deterioration of the image quality is provided. The method includes creating a first luminance component image data with the boundaries of the blocks thereof smoothened, creating a second luminance component image data with its entirety smoothened from the first luminance component image data, creating edge image data by subtracting the second luminance component image data from the first luminance component image data, creating corrected edge image data by applying correction to the edge image data under given conditions, and creating third luminance component image data by adding the corrected edge image data to the second luminance component image data. For color-difference component image data, first color-difference component image data with its entirety smoothened is created from the color-difference component image data. The third luminance component image data and the first color-difference component image data are finally outputted.

摘要翻译： 提供了可以适当地降低块噪声和蚊式噪声而不降低图像质量的图像噪声降低方法。 该方法包括：创建其平滑块的边界的第一亮度分量图像数据，创建从第一亮度分量图像数据整体整合的第二亮度分量图像数据，通过减去第二亮度分量图像数据来产生边缘图像数据 从第一亮度分量图像数据，通过在给定条件下对边缘图像数据应用校正来创建校正的边缘图像数据，并且通过将校正的边缘图像数据与第二亮度分量图像数据相加来创建第三亮度分量图像数据。 对于色差分量图像数据，从色差分量图像数据创建整体平滑化的第一色差分量图像数据。 最后输出第三亮度分量图像数据和第一色差分量图像数据。

公开(公告)号：US5404406A

公开(公告)日：1995-04-04

申请号：US159254

申请日：1993-11-30

申请人： Norihiko Fuchigami ,  Masahiro Nakayama ,  Yoshiaki Tanaka ,  Takuma Suzuki ,  Mitsuo Matsumoto

发明人： Norihiko Fuchigami ,  Masahiro Nakayama ,  Yoshiaki Tanaka ,  Takuma Suzuki ,  Mitsuo Matsumoto

IPC分类号： H04S1/00 ,  H04R5/00

CPC分类号： H04S1/002 ,  H04S1/005

摘要： A method for reproducing sounds from signals, which are supplied from a same sound source through a pair of localization filters by using a pair of transducers disposed apart from each other and for controlling the localization of a sound image in such a way to make a listener feel that he hears sounds from a virtual sound source which is localized at a desired sound image location being different from the positions of the transducers. When performing this method, a signal for measurement reproduced at each sound image location is measured at the listener's position as data to be used for estimating head-related transfer characteristics. Then, the head-related transfer characteristics corresponding to each sound image location are estimated from the measured data. Subsequently, transfer characteristics of the pair of the localization filters, which characteristics of which are necessary for localizing a sound image at each sound image location, are calculated on the basis of the estimated head-related transfer characteristics. Next, a scaling processing is performed to obtain the coefficients of the pair of the localization filters as an impulse response. Then, the coefficients obtained by the scaling processing are set in a pair of convolvers. Finally, sound signals are supplied from the sound source to the pair of the convolvers. Further, outputs of the pair of the convolvers are reproduced from the pair of the transducers.

摘要翻译： 一种用于从相同的声源通过一对定位滤波器通过使用彼此分离设置的一对换能器来再现声音的方法，并且以这样一种方式来控制声像的定位以使听众 感觉到他听到来自虚拟声源的声音，该声音源被定位在与换能器的位置不同的期望的声音图像位置处。 当执行该方法时，在收听者的位置处测量在每个声像位置再现的用于测量的测量信号，作为用于估计头相关传送特性的数据。 然后，根据测量数据估计与每个声像位置相对应的头相关传送特性。 随后，基于估计的头部相关传送特性来计算一对定位滤波器的传送特性，其特征是在每个声像位置定位声像所必需的。 接下来，执行缩放处理以获得一对定位滤波器的系数作为脉冲响应。 然后，通过缩放处理获得的系数被设置在一对卷积器中。 最后，声音从声源提供给一对卷积器。 此外，从一对换能器再现一对卷积器的输出。

公开(公告)号：US08686437B2

公开(公告)日：2014-04-01

申请号：US13601408

申请日：2012-08-31

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

IPC分类号： H01L29/15

CPC分类号： H01L21/0465 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7827

摘要： According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration.

摘要翻译： 根据一个实施例，半导体器件包括第一，第二，第三，第四和第五半导体区域，绝缘膜，控制电极以及第一和第二电极。 第一，第二，第三，第四和第五半导体区域包括碳化硅。 第一半导体区域具有第一杂质浓度，并且具有第一部分。 第二半导体区域设置在第一半导体区域上。 第三半导体区域设置在第二半导体区域上。 第四半导体区域设置在第一部分和第二半导体区域之间。 第四半导体区域设置在第一部分和第三半导体区域之间。 第五半导体区域包括设置在第一部分和第二半导体区域之间的第一区域，并且具有高于第一杂质浓度的第二杂质浓度。