公开(公告)号：US07176544B2

公开(公告)日：2007-02-13

申请号：US10813864

申请日：2004-03-31

申请人： Taner Dosluoglu ,  Michael Henry Brill

发明人： Taner Dosluoglu ,  Michael Henry Brill

IPC分类号： H01L31/00

CPC分类号： H01L31/035281 ,  H01L27/14601 ,  H01L27/14647 ,  Y02E10/50

摘要： A pixel for detecting red and green light is a single pixel is described. The pixel comprises a deep N well formed in a P type epitaxial substrate. The pixel comprises a deep N well formed in a P type epitaxial substrate. A number of P wells, which are used as the sensor nodes, are formed in the deep N well. The use of these P wells as the sensor nodes improves the modulation transfer function. The depth of the deep N well is about equal to the depth of hole electron pairs generated by red light in silicon. The depth of the P wells is about equal to the depth of hole electron pairs generated by green light in silicon. A red/green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells and the deep N well isolated. A green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells isolated and the deep N well held at a fixed positive voltage. A red signal at each P well is determined by subtracting the green signal at that P well from the red/green signal at that P well. The invention can take advantage of the fact that the human perception of a green signal is green, the human perception of a red signal is red, and the human perception of a red/green signal is red. The invention also works if P regions are substituted for N regions and N regions substituted for P regions.

摘要翻译： 用于检测红色和绿色光的像素是单个像素。 像素包括在P型外延衬底中形成的深N阱。 像素包括在P型外延衬底中形成的深N阱。 用作传感器节点的多个P阱形成在深N阱中。 使用这些P孔作为传感器节点改善了调制传递函数。 深N阱的深度大约等于由硅中的红光产生的空穴电子对的深度。 P阱的深度大约等于由硅中的绿光产生的空穴电子对的深度。 通过在与P阱和深N阱分离的电荷积分循环之后，通过确定每个P阱和深N阱之间的电位，在每个P阱处确定红色/绿色信号。 通过在分离P阱并且将N阱保持在固定的正电压的电荷积分周期之后，通过确定每个P阱和深N阱之间的电位，在每个P阱处确定绿色信号。 通过从该P阱处的红色/绿色信号中减去该P阱处的绿色信号来确定每个P阱处的红色信号。 本发明可以利用人类对绿色信号的感知是绿色的，红色信号的人感知是红色的，并且人类对红/绿信号的感知是红色的。 如果P区域代替N个区域并取代P区域的N个区域，本发明也起作用。

公开(公告)号：US10402526B2

公开(公告)日：2019-09-03

申请号：US15174877

申请日：2016-06-06

申请人： Taner Dosluoglu ,  Anatoly Gelman

发明人： Taner Dosluoglu ,  Anatoly Gelman

IPC分类号： G06F17/50

摘要： Design of a power delivery network (PDN) is integrated with a digital logic design flow.

公开(公告)号：US20120154648A1

公开(公告)日：2012-06-21

申请号：US13403862

申请日：2012-02-23

申请人： Taner Dosluoglu

发明人： Taner Dosluoglu

IPC分类号： H04N9/04

CPC分类号： H04N5/3575 ,  H04N5/353 ,  H04N5/3532

摘要： An apparatus controls operation of an array of color multiple sensor pixel image sensors to provide a global shuttering for one half of the color multiple sensor pixel image sensors and a rolling shuttering for all color multiple sensor pixel image sensors of the array. The apparatus includes a row control circuit and a column clamp, sample, and hold circuit. The row control circuit generates the necessary reset control signals, transfer gating signals, and row selecting signals for providing the global shuttering and the rolling shuttering color multiple sensor pixel image sensors. The column clamp, sample and hold circuit generates an output signal representative of a number of photons impinging upon each color multiple sensor pixel image sensor of the row of selected color multiple sensor pixel image sensors. The control apparatus further includes an analog to digital converter which converts the read out signal to a digital image signal.

摘要翻译： 一种设备控制彩色多传感器像素图像传感器阵列的操作，以为彩色多传感器像素图像传感器的一半提供全局快门，以及用于阵列的所有彩色多传感器像素图像传感器的滚动快门。 该装置包括行控制电路和列钳，采样保持电路。 行控制电路产生必要的复位控制信号，传送选通信号和行选择信号，以提供全局快门和滚动快门彩色多传感器像素图像传感器。 柱夹，采样和保持电路产生表示入射到所选择的彩色多传感器像素图像传感器行中的每个彩色多传感器像素图像传感器的光子数量的输出信号。 控制装置还包括将读出的信号转换为数字图像信号的模数转换器。

公开(公告)号：US07515183B2

公开(公告)日：2009-04-07

申请号：US10997383

申请日：2004-11-24

申请人： Guang Yang ,  Taner Dosluoglu

发明人： Guang Yang ,  Taner Dosluoglu

IPC分类号： H04N5/217 ,  H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H04N5/347 ,  H04N5/374

摘要： A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.

摘要翻译： 光传感器图像分辨率调节装置与以列和行组织的图像光传感器阵列通信，并且具有以诸如Bayer图案的图案排列以检测光的多个传感器类型。 光传感器图像分辨率调节装置具有光传感器阵列抽取电路，以将图像光传感器阵列分割成多个子组。 列平均电路对子组内常用彩色光电传感器的光转换电信号进行平均。 行平均电路在高光强度条件下对来自子组内的颜色相邻行的相邻光转换电信号的常用颜色进行平均。 在低光条件下，行分组电路将来自子组内的颜色相邻行的相邻光转换电信号的公共颜色相集成。

公开(公告)号：US07336530B2

公开(公告)日：2008-02-26

申请号：US11508354

申请日：2006-08-23

申请人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

IPC分类号： G11C11/34 ,  H01L21/8238

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

摘要翻译： 具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt; - 孔是在P + - SUP型衬底中。 两个P + SUP区域形成PMOS晶体管的源极和漏极。 形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。 用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。 由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。 添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。 该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

公开(公告)号：US07265397B1

公开(公告)日：2007-09-04

申请号：US09942835

申请日：2001-08-30

申请人： John Robertson Tower ,  Peter Alan Levine ,  Pradyumna Kumar Swain ,  Nathaniel Joseph McCaffrey ,  Taner Dosluoglu

发明人： John Robertson Tower ,  Peter Alan Levine ,  Pradyumna Kumar Swain ,  Nathaniel Joseph McCaffrey ,  Taner Dosluoglu

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/14806 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/335 ,  H04N5/372 ,  H04N5/37455

摘要： An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.

摘要翻译： 用于产生与接收的光电子相对应的信号的光学传感器电路形成在单个单片基板上，并且包括电荷耦合器件（CCD）阵列。 阵列由通过标准CMOS工艺构成的多个像素形成。 每个像素由少数载流子的至少一个电荷阱和覆盖至少一个电荷阱的栅极氧化物层形成。 至少两个对应于位于至少两个电荷阱的位置的间隔开的栅极覆盖栅极氧化物层。 相邻电极之间的空间限定了在至少两个间隔开的栅极电极之间的相邻电极之间传输电荷的间隙，并且间隙被稳定。 还描述了背照光成像器，其中光载流子通过形成在像素结构中的PN结从与像素集成的器件转移。

公开(公告)号：US20060113459A1

公开(公告)日：2006-06-01

申请号：US10999875

申请日：2004-11-30

申请人： Guang Yang ,  Taner Dosluoglu

发明人： Guang Yang ,  Taner Dosluoglu

IPC分类号： H01L27/00

CPC分类号： H04N9/045 ,  H04N5/347

摘要： A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.

公开(公告)号：US20050156214A1

公开(公告)日：2005-07-21

申请号：US11068365

申请日：2005-02-28

申请人： Taner Dosluoglu ,  Nathaniel McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel McCaffrey

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L27/146 ,  H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/10 ,  H01L31/112 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

公开(公告)号：US20050156212A1

公开(公告)日：2005-07-21

申请号：US11068283

申请日：2005-02-28

申请人： Taner Dosluoglu ,  Nathaniel McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel McCaffrey

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L27/146 ,  H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/10 ,  H01L31/112 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

摘要翻译： 具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt; - 孔是在P + - SUP型衬底中。 两个P + SUP区域形成PMOS晶体管的源极和漏极。 形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。 用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。 由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。 添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。 该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

公开(公告)号：US06911712B2

公开(公告)日：2005-06-28

申请号：US10439925

申请日：2003-05-16

申请人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

IPC分类号： H01L27/146 ,  H01L31/10

CPC分类号： H01L27/14609 ,  H01L27/14647

摘要： A CMOS pixel responsive to different colors of optical radiation without the use of color filters is described. A deep N well is formed in a P type silicon substrate. An N well is then formed at the outer periphery of the deep N well to form a P well within an N well structure. Two N+ regions are formed in the P well and at least one P+ region is formed in the N well. A layer of gate oxide and a polysilicon electrode is then formed over one of the N+ regions. The PN junction between the deep N well and the P type silicon substrate is responsive to red light. The PN junction between the deep N well and the P well is responsive to red light. The PN junction between the P well and the N+ region which is not covered by polysilicon and the PN junction formed by the N well and the P+ region are responsive to green or blue light. The PN junction formed by the junction between the P well and the N+ region which is covered by polysilicon is responsive to green light. The green signal is subtracted from the blue/green signal to produce a blue signal.

摘要翻译： 描述了响应不同颜色的光辐射而不使用滤色器的CMOS像素。 在P型硅衬底中形成深N阱。 然后在深N阱的外周形成N阱，以在N阱结构内形成P阱。 在P阱中形成两个N + +区域，并且在N阱中形成至少一个P + +区域。 然后在N + +区域之一上形成一层栅极氧化物和多晶硅电极。 深N阱和P型硅衬底之间的PN结对红光有响应。 深N井和P井之间的PN结对红光有反应。 未被多晶硅覆盖的P阱和N + +区域之间的PN结以及由N阱和P + +区形成的​​PN结对绿色 或蓝光。 由P阱和由多晶硅覆盖的N + +区之间的结形成的PN结响应于绿光。 从蓝色/绿色信号中减去绿色信号以产生蓝色信号。