摘要:
A fluorine-containing polymeric compound which contains a structural unit (f1) that is decomposable in an alkali developing solution as a block copolymer portion, a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid, and an acid generator component (B) that generates acid upon exposure.
摘要:
A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1′) containing an acid dissociable, dissolution inhibiting group within the structure thereof and including a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and A″ represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom) and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group; or a polymeric compound (Al) including the structural unit (a0) and a structural unit (al) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
摘要:
A method of forming a resist pattern, including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, conducting exposure of the resist film, and patterning the resist film by a negative tone development using a developing solution containing an organic solvent, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) derived from an acrylate ester containing an acid decomposable group which generates an alcoholic hydroxy group by the action of acid to thereby exhibit increased hydrophilicity.
摘要:
A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.
摘要:
A method of forming a resist pattern, including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, conducting exposure of the resist film, and patterning the resist film by a negative tone development using a developing solution containing an organic solvent, wherein the base component (A) includes a resin component (A1) containing a structural unit (a1) derived from an acrylate ester containing an acid decomposable group which exhibits increased hydrophilicity by the action of an acid and a structural unit (a0) derived from an acrylate ester containing an —SO2— containing cyclic group.
摘要:
A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under the action of acid and an acid-generator component (B), the resin component (A) including a polymeric compound (A1) having a structural unit (a1) containing an acid dissociable, dissolution inhibiting group, a structural unit (a5) containing a base dissociable group an a structural unit (a6) represented by general formula (a6-1) (R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of R2 and R3 independently represents a hydrogen atom or an alkyl group that may contain an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group; and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position).
摘要翻译:一种正性抗蚀剂组合物,其包含在酸和酸发生剂组分(B)的作用下在碱性显影液中显示增加的溶解性的树脂组分(A),所述树脂组分(A)包含具有 含有酸解离性溶解抑制基团的结构单元(a1),含有碱解离基团的结构单元(a5),由通式(a6-1)表示的结构单元(a6)(R表示氢原子,烷基 1至5个碳原子的基团或1至5个碳原子的卤代烷基; R 2和R 3各自独立地表示可以在任意位置含有氧原子的氢原子或烷基,或者R 2和R 3键合 一起形成亚烷基; W表示可以在任意位置包含氧原子的环状亚烷基。
摘要:
A positive resist composition including a base component (A′) which exhibits increased solubility in an alkali developing solution under the action of acid and generates acid upon exposure, the base component (A′) including a resin component (A1) having a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group (wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof).
摘要翻译:一种正性抗蚀剂组合物,其包含在酸性作用下在碱性显影液中显示出增加的溶解性并在曝光时产生酸的基础组分(A'),所述基础组分(A')包括具有结构单元的树脂组分(A1) 由通式(a0-1)表示的(a0-1),曝光时产生酸的结构单元(a0-2)和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元(a1)(其中 R 1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基,R 2表示二价连接基团,R 3表示在其环骨架中含有-SO 2 - 的环状基团) 。
摘要:
A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure and a fluorine-containing polymeric compound (C′) which generates acid upon exposure, the base component (A) having a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and the fluorine-containing polymeric compound (C′) having a structural unit (c0) which generates acid upon exposure and a structural unit (c1) represented by formula (c1) (wherein R2 represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton, Q0 represents a single bond or a divalent linking group, and R0 represents an organic group which may have a fluorine atom).
摘要:
To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.
摘要:
A positive resist composition including: a base component (A′) that exhibits increased solubility in an alkali developing solution under action of acid, without including an acid generator component other than the base component (A′), wherein the base component (A′) includes a resin component (A1) having a structural unit (a0-1) represented by general formula (a0-1) shown below and a structural unit (a1) containing an acid dissociable, dissolution inhibiting group: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; R2 represents a single bond or a divalent linking group; and R3 represents a cyclic group that contains —SO2— within the ring skeleton thereof.
摘要翻译:一种正型抗蚀剂组合物,其包含:在不包含除了所述碱成分(A')以外的酸发生剂成分的情况下,在酸的作用下在碱性显影液中显示增加的溶解性的基础成分(A'),其中,所述基础成分(A' )包括具有下述通式(a0-1)表示的结构单元(a0-1)的树脂组分(A1)和含有酸解离溶解抑制基团的结构单元(a1):其中R1表示氢原子 ,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基; R2表示单键或二价连接基团; R 3表示在其环骨架中含有-SO 2 - 的环状基团。