公开(公告)号：US5595606A

公开(公告)日：1997-01-21

申请号：US634372

申请日：1996-04-18

申请人： Yuichiro Fujikawa ,  Tatsuo Hatano ,  Seishi Murakami

发明人： Yuichiro Fujikawa ,  Tatsuo Hatano ,  Seishi Murakami

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572

摘要： A shower head of a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying a raw gas and a reduction gas into a process chamber. The shower head includes upper, middle and lower blocks which are formed independently of each other. Each of the raw gas passage and the reduction gas passage is branched from the upper block to the lower block. A coolant passage is formed in the lower block near supply outlets of the raw gas and the reduction gas for cooling the supply outlets. A heater is arranged in the upper and middle blocks for heating the raw gas passage.

摘要翻译： 金属CVD装置的喷头具有原料气体通道和还原气体通道，用于分别将原料气体和还原气体分别供给到处理室中。 淋浴头包括彼此独立地形成的上部，中部和下部块。 原料气体通道和还原气体通道中的每一个从上部块分配到下部块。 在原料气体和还原气体的供给出口附近的下部块体中形成冷却剂通路，以冷却供给出口。 加热器布置在上部和中部块中，用于加热原料气体通道。

公开(公告)号：US5963834A

公开(公告)日：1999-10-05

申请号：US992178

申请日：1997-12-17

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Keishi Akiba ,  Takaya Shimizu

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Keishi Akiba ,  Takaya Shimizu

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45561 ,  C23C16/45574 ,  Y10S438/905

摘要： A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

摘要翻译： 一种形成CVD膜的方法，包括以下步骤：将待处理的物体加载到处理室中，并将物体定位在处理室中的支撑基座上，将物体定位在处理室中，引入处理气体 从对应的气体供给源通过相应的气体导入管道进入处理室，并且通过化学气相沉积法在处理室中的物体上形成膜，在将物体形成在物体上之后，将物体从处理室中卸下， 在从处理室卸载物体之后，对处理室内部进行干洗，并且在干燥处理室内部之后，经由相应的气体导入管将惰性气体引入到室中以清除作为 气体导入管中的残留物和室内。

公开(公告)号：US5704214A

公开(公告)日：1998-01-06

申请号：US634164

申请日：1996-04-18

申请人： Yuichiro Fujikawa ,  Seishi Murakami ,  Tatsuo Hatano

发明人： Yuichiro Fujikawa ,  Seishi Murakami ,  Tatsuo Hatano

IPC分类号： B01D53/34 ,  B01D8/00 ,  B01D53/58 ,  B01D53/72 ,  B01J3/00 ,  B01J3/02 ,  C23C16/44 ,  F28F3/02 ,  H01L21/205 ,  H01L21/285

CPC分类号： B01D8/00 ,  C23C16/4412 ,  F28F3/02 ,  Y02C20/30 ,  Y10S417/901

摘要： A trap body is removably attached in the housing inserted in that portion of the exhaust passage which is situated on the upstream side of a vacuum pump, and has cooling fins for cooling the tramp materials in the exhaust gas brought into contact with the cooling means, thereby liquefying the tramp materials. Therefore, the tramp materials, such as unaffected process gases, products of reaction, etc., contained in the exhaust gas flowing through the exhaust passage, are cooled and liquefied when they are touched by the trap body cooled by the cooling unit, and adhere to the surface of the trap body. Thus, the tramp materials in the exhaust gas can be removed lest they damage the vacuum pump on the downstream side or close up the exhaust passage.

摘要翻译： 捕集体可拆卸地安装在插入在位于真空泵的上游侧的排气通道的该部分中的壳体中，并且具有用于冷却与冷却装置接触的废气中的垃圾材料的冷却片， 从而液化流质物料。 因此，流经排气通路的排气中含有的未受影响的处理气体，反应产物等的流质物质被被冷却单元冷却的捕集体接触时被冷却和液化，并粘附 到陷阱体的表面。 因此，废气中的垃圾物质可以被去除，以免损坏下游侧的真空泵或关闭排气通道。

公开(公告)号：US5880526A

公开(公告)日：1999-03-09

申请号：US843239

申请日：1997-04-14

申请人： Tatsuo Hatano ,  Seishi Murakami

发明人： Tatsuo Hatano ,  Seishi Murakami

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L23/53223 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S257/915

摘要： A barrier metal layer comprises a titanium film having a surface nitrided and modified by a nitrogen compound containing nitrogen atoms, and a titanium nitride film formed on a surface of the titanium film. The titanium film and titanium nitride film are interposed between a base layer, or a lower layer of a semiconductor device, and a metal film or an upper layer of the semiconductor device. A method of forming a barrier metal layer comprises the steps of forming a titanium film on an entire surface of an insulating layer including an inner wall of a hole, which hole is formed in a predetermined portion of the insulating layer to electrically connect a lower wiring layer and an upper wiring layer constituting a multilevel inter-connection structure of a semiconductor device, the upper wiring layer being provided on the insulating layer, the insulating layer being deposited on the lower wiring layer, the hole being formed to reach the lower wiring layer, and also forming the titanium film on a surface of the lower wiring layer exposed to a bottom of the hole, nitriding and modifying the titanium film by exposing the titanium film in an atmosphere of a nitrogen compound containing nitrogen atoms, and forming a titanium nitride film on the modified titanium film, the upper wiring layer being deposited on the titanium nitride layer.

摘要翻译： 阻挡金属层包括具有氮表面氮化并被含氮原子改性的钛膜和形成在钛膜表面上的氮化钛膜。 钛膜和氮化钛膜介于半导体器件的基底层或下层之间，半导体器件的金属膜或上层之间。 形成阻挡金属层的方法包括以下步骤：在包括孔的内壁的绝缘层的整个表面上形成钛膜，该绝缘层在绝缘层的预定部分形成孔，以将下部布线 层和构成半导体器件的多层互连结构的上布线层，所述上布线层设置在所述绝缘层上，所述绝缘层沉积在所述下布线层上，所述孔形成为到达所述下布线层 并且在暴露于孔的底部的下布线层的表面上形成钛膜，通过在含有氮原子的氮化合物的气氛中暴露钛膜来氮化和改性钛膜，并且形成氮化钛 在该改性钛膜上形成薄膜，上部布线层沉积在氮化钛层上。

公开(公告)号：US6126994A

公开(公告)日：2000-10-03

申请号：US907007

申请日：1997-08-06

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  C23C16/448 ,  H01L21/203

CPC分类号： C23C16/4481 ,  Y10S427/101

摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

摘要翻译： 一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。

公开(公告)号：US5690743A

公开(公告)日：1997-11-25

申请号：US496130

申请日：1995-06-27

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  C23C16/448 ,  H01L21/203

CPC分类号： C23C16/4481 ,  Y10S427/101

摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

摘要翻译： 一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。

公开(公告)号：US06169032A

公开(公告)日：2001-01-02

申请号：US09102911

申请日：1998-06-23

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： H01L2144

CPC分类号： C23C16/34 ,  C23C16/46 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/76843

摘要： The present invention provides an apparatus and method for forming a film by loading an object to be processed into a process chamber, moving up supporting pins to receive the susceptor, heating the object to be processed with heat radiation for a predetermined time by means of a heater housed in the susceptor while the supporting pins is being moved up, mounting the object to be processed on the susceptor, introducing arbitrarily chosen gases to adjust an inner pressure and temperature in accordance with the film formation conditions, and introducing a raw material gas into the process chamber, thereby starting film formation. After completion of the film-formation, only the supply of the raw material gas is stopped, whereas supply of other gases is gradually stopped. When the object to be processed is unloaded from the process chamber after completion of the film formation process, first, supporting pins are moved up to move the object to be processed away from the heater housed in the susceptor. The object to be processed is cooled in this manner. By virtue of a series of operations, a rapid change temperature and, a rapid change in pressure applied to the object to be processed is avoided, resulting in preventing a rapid temperature change.

摘要翻译： 本发明提供了一种用于通过将待加工物体加载到处理室中形成膜的装置和方法，使支撑销向上移动以接收基座，通过热辐射将热处理的物体加热预定时间 收纳在基座上的加热器，同时支撑销向上移动，将待处理对象安装在基座上，引入任意选择的气体，以根据成膜条件调节内部压力和温度，并将原料气体引入 处理室，从而开始成膜。 在成膜完成之后，仅停止供应原料气体，而逐渐停止供应其它气体。 当在成膜处理完成之后待处理物体从处理室中卸载时，首先，向上移动支撑销以将被处理物体从容纳在基座中的加热器移开。 以这种方式冷却被处理物体。 通过一系列操作，避免了快速变化的温度和施加到待处理物体上的压力的快速变化，从而防止了快速的温度变化。

公开(公告)号：US06153515A

公开(公告)日：2000-11-28

申请号：US156896

申请日：1998-09-18

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： C23C16/34 ,  C23C28/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L21/44

CPC分类号： H01L21/76856 ,  H01L21/76843 ,  H01L23/485 ,  H01L2924/0002

摘要： There is provided a method of forming a structure connecting a first conductive layer and a second conductive layer in a semiconductor device comprising the steps of forming an insulating film on the first conductive layer, forming a hole in the insulating layer in which a surface of the first conductive layer is partially exposed, forming a titanium layer on a surface of the first conductive layer exposed at least in the hole, nitriding a surface of the titanium layer, oxidizing an un-nitrided part of the surface of the titanium layer, forming a titanium nitride layer on the titanium layer, and forming the second conductive layer on the titanium nitride layer.

摘要翻译： 提供了一种在半导体器件中形成连接第一导电层和第二导电层的结构的方法，包括以下步骤：在第一导电层上形成绝缘膜，在绝缘层中形成一个孔， 第一导电层被部分地暴露，在至少暴露在孔中的第一导电层的表面上形成钛层，氮化钛层的表面，氧化钛层表面的未氮化部分，形成 在钛层上形成氮化钛层，在氮化钛层上形成第二导电层。

公开(公告)号：US5709757A

公开(公告)日：1998-01-20

申请号：US518980

申请日：1995-08-24

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

IPC分类号： H01L21/302 ,  B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  B08B3/10

CPC分类号： H01L21/67028 ,  B08B7/00 ,  C23C16/4405 ,  Y10S438/905

摘要： A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.

摘要翻译： 具有干洗功能的成膜装置包括用于容纳待处理物体的处理室，将处理室内引入用于在物体上形成金属膜或金属化合物膜之一的处理气体的处理气体供给系统 用于将处理气体的成分沉积在物体上，从而形成膜的加热装置，用于将含有三氯化氮或氟化物如三氟化氯或三氟化氮的清洁气体引入处理室的清洁气体供给系统用于清洁 由于成膜而附着在处理室的内部的金属或金属化合物之一，以及用于将含有醇的清洁后处理气体引入处理室的后处理气体供给系统。

公开(公告)号：US20100162956A1

公开(公告)日：2010-07-01

申请号：US11989936

申请日：2006-08-04

申请人： Seishi Murakami ,  Kei Ogose

发明人： Seishi Murakami ,  Kei Ogose

IPC分类号： H01L21/683 ,  C23C16/00 ,  C23C16/46 ,  H01L21/477

CPC分类号： C23C16/4586 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/68735 ,  H01L21/68742

摘要： Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.

摘要翻译： 公开了一种基座，其实现了放置在基座上的晶片的均匀的温度分布，并且还公开了设置有基座的基板处理装置。 在基座12的晶片支撑表面的中心部分和周边部分之间的中间部分中形成环形凹部12a。由于设置凹部，所以抑制了来自基座的热辐射的基板加热效应 中间部分。 考虑到室内压力确定凹部的几何尺寸。