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公开(公告)号：US5595606A
公开(公告)日：1997-01-21
申请号：US634372
申请日：1996-04-18
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/45561 , C23C16/45565 , C23C16/45572
摘要： A shower head of a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying a raw gas and a reduction gas into a process chamber. The shower head includes upper, middle and lower blocks which are formed independently of each other. Each of the raw gas passage and the reduction gas passage is branched from the upper block to the lower block. A coolant passage is formed in the lower block near supply outlets of the raw gas and the reduction gas for cooling the supply outlets. A heater is arranged in the upper and middle blocks for heating the raw gas passage.
摘要翻译： 金属CVD装置的喷头具有原料气体通道和还原气体通道，用于分别将原料气体和还原气体分别供给到处理室中。 淋浴头包括彼此独立地形成的上部，中部和下部块。 原料气体通道和还原气体通道中的每一个从上部块分配到下部块。 在原料气体和还原气体的供给出口附近的下部块体中形成冷却剂通路，以冷却供给出口。 加热器布置在上部和中部块中，用于加热原料气体通道。
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2.发明授权Film deposition processing device having transparent support and transfer pins 失效具有透明支撑和传输销的膜沉积处理装置
公开(公告)号：US5525160A
公开(公告)日：1996-06-11
申请号：US237369
申请日：1994-05-03
申请人： Sumi Tanaka , Yuichiro Fujikawa , Tomihiro Yonenaga , Hideki Lee
发明人： Sumi Tanaka , Yuichiro Fujikawa , Tomihiro Yonenaga , Hideki Lee
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/455 , C23C16/45568 , C23C16/4583 , C23C16/481 , C23C16/54
摘要： A processing chamber having a heating device for heating the interior thereof to a required temperature, and a holding device with at least three separate holding elements is disclosed. A processing gas feed port and processing gas passages are provided in a cap which is connected to a processing chamber and closes an opening in the upper surface of the processing chamber, and the processing gas feed port and the processing gas passages are connected by a connection pipe. The processing chamber is connected to processing gas sources and has processing gas introduction passages formed in a side wall thereof and communicated with the processing gas passages. Seal members are provided around open ends of either of the processing gas passages or the processing gas introduction passages in the surfaces of the processing chamber and the cap opposed to each other. Thus generation of particles can be precluded in the processing gas feed unit, and smooth supply of processing gases, improved yields and throughputs, and easy maintenance operation can be attained.
摘要翻译： 一种处理室，其具有用于将其内部加热至所需温度的加热装置，以及具有至少三个分离的保持元件的保持装置。 处理气体供给口和加工用气体通路设置在与处理室连接并关闭处理室的上表面的开口的盖中，处理气体供给口和处理气体通路通过连接 管。 处理室与处理气体源连接，并且在其侧壁上形成有与处理气体通道连通的处理气体导入通道。 密封构件设置在相互相对的处理室和盖的表面中的处理气体通道或处理气体引入通道中的任一个的开口端周围。 因此，可以在处理气体供给单元中排除颗粒的产生，可以获得平滑的加工气体的供给，提高的产量和生产量以及容易的维护操作。
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公开(公告)号：US06156107A
公开(公告)日：2000-12-05
申请号：US276738
申请日：1999-03-26
IPC分类号： B01D45/08
CPC分类号： B01D45/08 , Y10S438/905 , Y10S438/909
摘要： The trap apparatus of the present invention includes a case provided for a gas exhaust system used for a film forming equipment which carries out a film forming process on an object, a gas supply port, made in the case and connected to an exhaust pipe of the gas exhaust system, for introducing an exhaust gas flowing through the exhaust pipe, into the case, a gas exhaust port, made in the case and connected to an exhaust pipe of the gas exhaust system, for exhausting the exhaust gas flowing through an inner space of the case, to the exhaust pipe, a plurality of partition plates arranged in the case so as to partition the inner space of the case into a plurality of rooms between the gas supply port and the gas exhaust port, a gas distribution port provided in some of the partition plates such that the exhaust gas introduced into the case through the gas supply port, is allowed to flow through the rooms partitioned by the partition plates, in the order, and then exhausted from the gas exhaust port, a trap mechanism housed in each of the rooms, for trapping reaction byproducts contained in the exhaust gas introduced into the case through the gas supply port, and a temperature control mechanism for individually controlling the temperatures in the rooms partitioned by the partition plates.
摘要翻译： 本发明的捕集装置包括：用于成膜设备的气体排出系统的壳体，该成膜设备对物体进行成膜处理，气体供给口在壳体中形成，并连接到排气管 气体排出系统，用于将排出管中流出的废气引入到壳体内，在气体排出系统的排气管中形成的气体排出口，用于排出流过内部空间的废气 在排气管上设置有多个分隔板，该多个分隔板布置在壳体中，以将壳体的内部空间分隔成气体供给口和排气口之间的多个室;气体分配口， 一些分隔板使得通过气体供给口引入到壳体中的排气被顺序地流过通过隔板分隔的房间，然后从气体排出口 奥斯港，收纳在每个房间中的陷阱机构，用于捕获通过气体供给口引入到壳体中的废气中包含的反应副产物;以及温度控制机构，用于单独控制由隔板分隔的房间中的温度 。
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公开(公告)号：US5704214A
公开(公告)日：1998-01-06
申请号：US634164
申请日：1996-04-18
IPC分类号： B01D53/34 , B01D8/00 , B01D53/58 , B01D53/72 , B01J3/00 , B01J3/02 , C23C16/44 , F28F3/02 , H01L21/205 , H01L21/285
CPC分类号： B01D8/00 , C23C16/4412 , F28F3/02 , Y02C20/30 , Y10S417/901
摘要： A trap body is removably attached in the housing inserted in that portion of the exhaust passage which is situated on the upstream side of a vacuum pump, and has cooling fins for cooling the tramp materials in the exhaust gas brought into contact with the cooling means, thereby liquefying the tramp materials. Therefore, the tramp materials, such as unaffected process gases, products of reaction, etc., contained in the exhaust gas flowing through the exhaust passage, are cooled and liquefied when they are touched by the trap body cooled by the cooling unit, and adhere to the surface of the trap body. Thus, the tramp materials in the exhaust gas can be removed lest they damage the vacuum pump on the downstream side or close up the exhaust passage.
摘要翻译： 捕集体可拆卸地安装在插入在位于真空泵的上游侧的排气通道的该部分中的壳体中，并且具有用于冷却与冷却装置接触的废气中的垃圾材料的冷却片， 从而液化流质物料。 因此，流经排气通路的排气中含有的未受影响的处理气体，反应产物等的流质物质被被冷却单元冷却的捕集体接触时被冷却和液化，并粘附 到陷阱体的表面。 因此，废气中的垃圾物质可以被去除，以免损坏下游侧的真空泵或关闭排气通道。
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公开(公告)号：US6149729A
公开(公告)日：2000-11-21
申请号：US80718
申请日：1998-05-19
CPC分类号： C23C16/4412 , C23C16/4405
摘要： A film forming apparatus includes a chamber in which a thin film is formed on a semiconductor wafer by supplying a process gas, the interior of which is then cleaned by a cleaning gas, while the gas in the chamber is exhausted by a vacuum system. The vacuum system includes a main vacuum line connected to a vacuum port of the chamber, a high-vacuum pump arranged on an upstream side of the main vacuum line, a coarse control vacuum pump arranged on a downstream side of the main vacuum line, a bypass line which is connected to the main vacuum line so as to bypass the high-vacuum pump and has a first connection portion connected between the vacuum port and the high-vacuum pump and a second connection portion connected between the high-vacuum pump and the coarse control vacuum pump, a trap arranged on the bypass line, heater arranged between the first connection portion and the trap for heating gas flowing from the first connection portion to the trap, and valves for selectively opening/closing the main vacuum line and the bypass line to allow the gas in the chamber to flow through one of the lines.
摘要翻译： 成膜装置包括：室，其中通过提供处理气体在半导体晶片上形成薄膜，然后通过真空系统排出室内的气体，其内部被清洁气体清洁。 真空系统包括连接到腔室的真空口的主真空管线，配置在主真空管线的上游侧的高真空泵，设置在主真空管线下游侧的粗调控制真空泵， 旁通管线，其与主真空管线连接以绕过高真空泵，并且具有连接在真空口和高真空泵之间的第一连接部分和连接在高真空泵和高真空泵之间的第二连接部分 布置在旁路管路上的疏水阀，布置在第一连接部分和捕集器之间的加热器，用于加热从第一连接部分流到捕集器的气体，以及用于选择性地打开/关闭主真空管线和旁路的阀 以允许室中的气体流过其中一条线。
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公开(公告)号：US5904757A
公开(公告)日：1999-05-18
申请号：US967917
申请日：1997-11-12
CPC分类号： B01D45/08 , Y10S438/905 , Y10S438/909
摘要： The trap apparatus of the present invention includes a case provided for a gas exhaust system used for a film forming equipment which carries out a film forming process on an object, a gas supply port, made in the case and connected to an exhaust pipe of the gas exhaust system, for introducing an exhaust gas flowing through the exhaust pipe, into the case, a gas exhaust port, made in the case and connected to an exhaust pipe of the gas exhaust system, for exhausting the exhaust gas flowing through an inner space of the case, to the exhaust pipe, a plurality of partition plates arranged in the case so as to partition the inner space of the case into a plurality of rooms between the gas supply port and the gas exhaust port, a gas distribution port provided in some of the partition plates such that the exhaust gas introduced into the case through the gas supply port, is allowed to flow through the rooms partitioned by the partition plates, in the order, and then exhausted from the gas exhaust port, and a trap mechanism housed in each of the rooms, for trapping reaction byproducts contained in the exhaust gas introduced into the case through the gas supply port.
摘要翻译： 本发明的捕集装置包括：用于成膜设备的气体排出系统的壳体，该成膜设备对物体进行成膜处理，气体供给口在壳体中形成，并连接到排气管 气体排出系统，用于将排出管中流出的废气引入到壳体内，在气体排出系统的排气管中形成的气体排出口，用于排出流过内部空间的废气 在排气管上设置有多个分隔板，该多个分隔板布置在壳体中，以将壳体的内部空间分隔成气体供给口和排气口之间的多个室;气体分配口， 一些分隔板使得通过气体供给口引入到壳体中的排气被顺序地流过通过隔板分隔的房间，然后从气体排出口 奥特港，以及容纳在每个房间中的捕集器机构，用于捕获通过气体供给口引入到壳体中的废气中包含的反应副产物。
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7.发明授权Method and apparatus for manufacturing a zinc oxide thin film at low temperatures 有权在低温下制造氧化锌薄膜的方法和装置公开(公告)号：US07744965B2
公开(公告)日：2010-06-29
申请号：US11377204
申请日：2006-03-17
申请人： Takashi Matsumoto , Chitake Imazu , Shigeru Hagihara , Kazuhiro Kijima , Osamu Abe , Satoshi Hiraki , Yuichiro Fujikawa
发明人： Takashi Matsumoto , Chitake Imazu , Shigeru Hagihara , Kazuhiro Kijima , Osamu Abe , Satoshi Hiraki , Yuichiro Fujikawa
CPC分类号： C23C14/0026 , C23C14/086 , H01L21/02395 , H01L21/02422 , H01L21/02554 , H01L21/02576 , H01L21/02631 , Y10T428/12667
摘要： The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.
摘要翻译： 本发明提供一种在诸如塑料的柔性基材的表面上形成具有高透明度和高导电性的氧化锌薄膜的方法和装置，而不需要掺杂杂质。 在将氧自由基与锌原子反应形成在形成真空的成膜室的基板的表面上形成氧化锌薄膜的方法中，作为原子排列缺陷的晶体缺陷密度 氧化物薄膜由基板的温度控制，从而形成氧化锌薄膜。 适合于在将基板的温度保持在400℃以下的同时形成膜，有意地干扰氧化锌薄膜的原子排列的规律性。
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8.发明申请Method and apparatus for manufacturing a zinc oxide thin film at low temperatures 有权在低温下制造氧化锌薄膜的方法和装置公开(公告)号：US20070042216A1
公开(公告)日：2007-02-22
申请号：US11377204
申请日：2006-03-17
申请人： Takashi Matsumoto , Chitake Imazu , Shigeru Hagihara , Kazuhiro Kijima , Osamu Abe , Satoshi Hiraki , Yuichiro Fujikawa
发明人： Takashi Matsumoto , Chitake Imazu , Shigeru Hagihara , Kazuhiro Kijima , Osamu Abe , Satoshi Hiraki , Yuichiro Fujikawa
IPC分类号： B32B15/00
CPC分类号： C23C14/0026 , C23C14/086 , H01L21/02395 , H01L21/02422 , H01L21/02554 , H01L21/02576 , H01L21/02631 , Y10T428/12667
摘要： The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.
摘要翻译： 本发明提供一种在诸如塑料的柔性基材的表面上形成具有高透明度和高导电性的氧化锌薄膜的方法和装置，而不需要掺杂杂质。 在将氧自由基与锌原子反应形成在形成真空的成膜室的基板的表面上形成氧化锌薄膜的方法中，作为原子排列缺陷的晶体缺陷密度 氧化物薄膜由基板的温度控制，从而形成氧化锌薄膜。 适合于在将基板的温度保持在400℃以下的同时形成膜，有意地干扰氧化锌薄膜的原子排列的规律性。
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