Image recording method and apparatus using multiple laser beams
    2.
    发明授权
    Image recording method and apparatus using multiple laser beams 失效
    使用多个激光束的图像记录方法和装置

    公开(公告)号:US5926203A

    公开(公告)日:1999-07-20

    申请号:US751732

    申请日:1996-11-18

    CPC分类号: G06K15/1261 B41J2/473

    摘要: A method and apparatus that prevent degradation of an image quality due to a change of a beam pitch in a subscanning direction of each optical beam on a record medium. At a given time, for example, when power is first turned on, a CPU detects a beam pitch on a record medium, e.g., a photosensitive drum, by using a CCD line image sensor. If the detected value differs from a value set according to a currently-selected scanning density, an LD arrangement change motor is rotated via a motor driver so that the beam pitch matches the set value so as to change an arrangement of laser diodes in a laser diode array. Control over the beam pitch occurs for a variety of conditions including control at regular intervals, power-on events, or when a scanning density specification signal indicates a different beam pitch than the detected beam pitch. Similarly, adjustment over the beam pitch is not typically made during a copying operation.

    摘要翻译: 一种防止由于每个光束在记录介质上的副扫描方向上的光束间距变化引起的图像质量劣化的方法和装置。 在给定的时间,例如,当电源首次打开时,CPU通过使用CCD线图像传感器来检测诸如感光鼓的记录介质上的光束间距。 如果检测值与根据当前选择的扫描浓度设定的值不同,则通过马达驱动器旋转LD布置改变马达,使得波束间距与设定值匹配,以便改变激光器中的激光二极管的布置 二极管阵列。 波束间距的控制发生在各种条件下,包括规则间隔的控制,上电事件,或当扫描浓度指示信号表示与检测的光束间距不同的光束间距时。 类似地,在复印操作期间通常不会对光束间距进行调整。

    Multiple beam scanning apparatus
    3.
    发明授权
    Multiple beam scanning apparatus 失效
    多光束扫描装置

    公开(公告)号:US5753907A

    公开(公告)日:1998-05-19

    申请号:US653694

    申请日:1996-05-23

    摘要: A multiple beam scanning apparatus in which a plurality of light beams are repeatedly scanned at the same time, including a light source unit defining an optical axis and including plural laser diodes, collimator lenses for respectively converting light beams emitted by the laser diodes to respective parallel light fluxes, and a beam composing unit for superposing the light beams and emitting the superposed light beams therefrom. The light source unit is rotatively adjustable around the optical axis and is constructed such that respective light fluxes emitted from the beam composing unit are emitted with predetermined respective different angles at least in a main scanning direction.

    摘要翻译: 一种多光束扫描装置,其中同时重复扫描多个光束,包括限定光轴的光源单元,并且包括多个激光二极管,准直透镜,用于将激光二极管发射的光束分别转换为各自的平行 光束和用于叠加光束并从其发射叠加的光束的光束组合单元。 光源单元围绕光轴可旋转地调节,并且被构造成使得从光束组合单元发射的各个光束至少在主扫描方向上以预定的各个不同的角度发射。

    Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
    4.
    发明申请
    Semiconductor manufacturing apparatus and manufacturing method of semiconductor device 审中-公开
    半导体制造装置及半导体装置的制造方法

    公开(公告)号:US20060137988A1

    公开(公告)日:2006-06-29

    申请号:US11080944

    申请日:2005-03-16

    IPC分类号: C25D21/12

    摘要: According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.

    摘要翻译: 根据本发明的一个方面,一种半导体制造装置,包括:处理室,其构造成容纳基板; 电极,设置在所述处理室中,所述基板被放置在所述电极上; 机器人臂构造成将所述基板传送到所述电极; 以及传感器,被配置为检测设置在所述电极的外周边缘部分上的聚焦环的检测图案,所述传感器包围放置在所述电极上的所述基板的周缘,并具有所述检测图案,其中,所述基板和 提供了基于所述传感器的检测结果来调整聚焦环的方法。

    Semiconductor device manufacturing system for etching a semiconductor by plasma discharge

    公开(公告)号:US06989073B2

    公开(公告)日:2006-01-24

    申请号:US10742881

    申请日:2003-12-23

    IPC分类号: H01L21/306

    CPC分类号: H01J37/32082

    摘要: A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

    Method and apparatus for controlling the air-fuel ratio in an internal
combustion engine
    6.
    发明授权
    Method and apparatus for controlling the air-fuel ratio in an internal combustion engine 有权
    用于控制内燃机中的空燃比的方法和装置

    公开(公告)号:US6014963A

    公开(公告)日:2000-01-18

    申请号:US203847

    申请日:1998-12-02

    申请人: Masaki Narita

    发明人: Masaki Narita

    IPC分类号: F02D45/00 F02D41/14 F02D41/00

    摘要: A method and apparatus for controlling the air-fuel ratio in an internal combustion engine wherein, when the operating condition of the internal combustion engine has shifted between learning zones, a learning control updates a correction value after the shift is made in accordance with a stand-by function of a control unit to reduce the occurrence of mislearning, perform the correction value updating learning control efficiently and effect the purification of exhaust gases. In the air-fuel ratio controlling method for the internal combustion engine, when the operating condition of the engine has shifted between learning zones, a learning control updates a correction value in accordance with a stand-by function. In the air-fuel ratio controlling apparatus for the internal combustion engine, a stand-by function is added to the control unit so that, when the operating condition of the engine has shifted between learning zones, a learning control for updating a correction value after the shift is conducted in a delayed manner in accordance with a preset wait count. Further, a stand-by function is added to the control unit so that the correction value updates learning control after the shift is performed, in a delayed manner in accordance with a preset wait time.

    摘要翻译: 一种用于控制内燃机中的空燃比的方法和装置,其中,当所述内燃机的运行状态在学习区之间移动时,学习控制在根据支架进行换档之后更新校正值 - 通过控制单元的功能来减少误学的发生,有效地执行校正值更新学习控制并且实现废气的净化。 在内燃机的空燃比控制方法中,当发动机的运转状态在学习区域之间移动时,学习控制根据待机功能更新校正值。 在内燃机的空燃比控制装置中,向控制单元添加备用功能,使得当发动机的运转状态在学习区域之间移动时,用于更新校正值之后的校正值的学习控制 根据预设的等待计数,以延迟的方式进行移位。 此外,将备用功能添加到控制单元,使得校正值根据预设的等待时间以延迟的方式更新移位之后的学习控制。

    Method of manufacturing semiconductor device
    8.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20060128093A1

    公开(公告)日:2006-06-15

    申请号:US11105465

    申请日:2005-04-14

    IPC分类号: H01L21/8242

    CPC分类号: H01L27/1087 H01L29/945

    摘要: A method of manufacturing a semiconductor device is provided. The method comprises forming a mask member on a surface of a semiconductor substrate; and forming a trench in the semiconductor substrate by selectively etching the semiconductor substrate with a mask of the mask member under a certain pressure. The pressure is changed on arrival of (Etching Depth)/(Aperture Width in said surface) at 30 or more for the remainder of the etching by a factor ranging from 1/2 to 9/10 relative to the pressure at the time of the arrival.

    摘要翻译: 提供一种制造半导体器件的方法。 该方法包括在半导体衬底的表面上形成掩模构件; 以及通过在一定压力下用掩模构件的掩模选择性地蚀刻半导体衬底,在半导体衬底中形成沟槽。 在蚀刻的其余部分(蚀刻深度)/(所述表面的孔径宽度)为30度以上时,压力变化为相对于 到达。

    Method of sequentially processing a plurality of lots each including semiconductor substrates
    9.
    发明授权
    Method of sequentially processing a plurality of lots each including semiconductor substrates 失效
    顺序处理包括半导体衬底的多个批次的方法

    公开(公告)号:US06911398B2

    公开(公告)日:2005-06-28

    申请号:US10107434

    申请日:2002-03-28

    摘要: A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.

    摘要翻译: 一种制造半导体器件的方法,包括制备多个批次,每个批次包括要处理的半导体衬底,所述多个批次至少包括第一批次和第二批次,使用半导体制造装置处理每批的多个批次, 根据第一批次的待处理的第一处理类型和第一批次之后的待处理的第二批次的第二处理类型,判断半导体制造装置是否在处理第二批次之前进行清洁, 并且在第二批次不需要清洁的情况下处理第二批而不进行清洁。

    Semiconductor device manufacturing system for etching a semiconductor by plasma discharge

    公开(公告)号:US06685797B2

    公开(公告)日:2004-02-03

    申请号:US09527681

    申请日:2000-03-17

    IPC分类号: H05H100

    CPC分类号: H01J37/32082

    摘要: A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.