公开(公告)号：US5610724A

公开(公告)日：1997-03-11

申请号：US490011

申请日：1995-06-13

申请人： Masaru Kaneko ,  Shigeru Yamazaki ,  Akihiko Motegi ,  Masaki Narita ,  Hiroshi Komai

发明人： Masaru Kaneko ,  Shigeru Yamazaki ,  Akihiko Motegi ,  Masaki Narita ,  Hiroshi Komai

IPC分类号： B65H39/11 ,  B41J13/10 ,  B65H31/24 ,  G03G15/00 ,  G06F3/12 ,  G06K15/00 ,  G03G21/00

CPC分类号： G03G15/6538 ,  B41J13/106 ,  G06K15/00 ,  B65H2407/33 ,  G03G2215/00907 ,  G03G2215/00911 ,  G06K2215/0082

摘要： In an image forming system, an image forming apparatus with an optional main box having a plurality of bins prevents the cover of each bin from being locked in its closed position unless papers output to all the bins are taken out. Hence, all the bins are empty when they are used later, and can be used by any users. This implements a mail box which can be efficiently used by many users.

摘要翻译： 在图像形成系统中，具有多个箱的可选主箱的图像形成装置防止每个仓的盖被锁定在其关闭位置，除非输出到所有箱的纸被取出。 因此，当以后使用时，所有的空箱都是空的，可以由任何用户使用。 这实现了一个可以被许多用户有效使用的邮箱。

公开(公告)号：US20060137988A1

公开(公告)日：2006-06-29

申请号：US11080944

申请日：2005-03-16

申请人： Katsunori Yahashi ,  Keiichi Takenaka ,  Masaki Narita ,  Itsuko Sakai

发明人： Katsunori Yahashi ,  Keiichi Takenaka ,  Masaki Narita ,  Itsuko Sakai

IPC分类号： C25D21/12

CPC分类号： H01J37/32642 ,  H01J37/32935 ,  H01L21/67748 ,  H01L21/681

摘要： According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.

摘要翻译： 根据本发明的一个方面，一种半导体制造装置，包括：处理室，其构造成容纳基板; 电极，设置在所述处理室中，所述基板被放置在所述电极上; 机器人臂构造成将所述基板传送到所述电极; 以及传感器，被配置为检测设置在所述电极的外周边缘部分上的聚焦环的检测图案，所述传感器包围放置在所述电极上的所述基板的周缘，并具有所述检测图案，其中，所述基板和 提供了基于所述传感器的检测结果来调整聚焦环的方法。

公开(公告)号：US06989073B2

公开(公告)日：2006-01-24

申请号：US10742881

申请日：2003-12-23

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： H01L21/306

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

公开(公告)号：US6014963A

公开(公告)日：2000-01-18

申请号：US203847

申请日：1998-12-02

申请人： Masaki Narita

发明人： Masaki Narita

IPC分类号： F02D45/00 ,  F02D41/14 ,  F02D41/00

CPC分类号： F02D41/2454 ,  F02D41/2445 ,  F02D41/2448

摘要： A method and apparatus for controlling the air-fuel ratio in an internal combustion engine wherein, when the operating condition of the internal combustion engine has shifted between learning zones, a learning control updates a correction value after the shift is made in accordance with a stand-by function of a control unit to reduce the occurrence of mislearning, perform the correction value updating learning control efficiently and effect the purification of exhaust gases. In the air-fuel ratio controlling method for the internal combustion engine, when the operating condition of the engine has shifted between learning zones, a learning control updates a correction value in accordance with a stand-by function. In the air-fuel ratio controlling apparatus for the internal combustion engine, a stand-by function is added to the control unit so that, when the operating condition of the engine has shifted between learning zones, a learning control for updating a correction value after the shift is conducted in a delayed manner in accordance with a preset wait count. Further, a stand-by function is added to the control unit so that the correction value updates learning control after the shift is performed, in a delayed manner in accordance with a preset wait time.

摘要翻译： 一种用于控制内燃机中的空燃比的方法和装置，其中，当所述内燃机的运行状态在学习区之间移动时，学习控制在根据支架进行换档之后更新校正值 - 通过控制单元的功能来减少误学的发生，有效地执行校正值更新学习控制并且实现废气的净化。 在内燃机的空燃比控制方法中，当发动机的运转状态在学习区域之间移动时，学习控制根据待机功能更新校正值。 在内燃机的空燃比控制装置中，向控制单元添加备用功能，使得当发动机的运转状态在学习区域之间移动时，用于更新校正值之后的校正值的学习控制 根据预设的等待计数，以延迟的方式进行移位。 此外，将备用功能添加到控制单元，使得校正值根据预设的等待时间以延迟的方式更新移位之后的学习控制。

公开(公告)号：US20060128093A1

公开(公告)日：2006-06-15

申请号：US11105465

申请日：2005-04-14

申请人： Keiichi Takenaka ,  Katsunori Yahashi ,  Itsuko Sakai ,  Masaki Narita

发明人： Keiichi Takenaka ,  Katsunori Yahashi ,  Itsuko Sakai ,  Masaki Narita

IPC分类号： H01L21/8242

CPC分类号： H01L27/1087 ,  H01L29/945

摘要： A method of manufacturing a semiconductor device is provided. The method comprises forming a mask member on a surface of a semiconductor substrate; and forming a trench in the semiconductor substrate by selectively etching the semiconductor substrate with a mask of the mask member under a certain pressure. The pressure is changed on arrival of (Etching Depth)/(Aperture Width in said surface) at 30 or more for the remainder of the etching by a factor ranging from 1/2 to 9/10 relative to the pressure at the time of the arrival.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在半导体衬底的表面上形成掩模构件; 以及通过在一定压力下用掩模构件的掩模选择性地蚀刻半导体衬底，在半导体衬底中形成沟槽。 在蚀刻的其余部分（蚀刻深度）/（所述表面的孔径宽度）为30度以上时，压力变化为相对于 到达。

公开(公告)号：US06911398B2

公开(公告)日：2005-06-28

申请号：US10107434

申请日：2002-03-28

申请人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

发明人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/67271 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.

摘要翻译： 一种制造半导体器件的方法，包括制备多个批次，每个批次包括要处理的半导体衬底，所述多个批次至少包括第一批次和第二批次，使用半导体制造装置处理每批的多个批次， 根据第一批次的待处理的第一处理类型和第一批次之后的待处理的第二批次的第二处理类型，判断半导体制造装置是否在处理第二批次之前进行清洁， 并且在第二批次不需要清洁的情况下处理第二批而不进行清洁。

公开(公告)号：US06685797B2

公开(公告)日：2004-02-03

申请号：US09527681

申请日：2000-03-17

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： H05H100

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

公开(公告)号：US06274507B1

公开(公告)日：2001-08-14

申请号：US09226723

申请日：1999-01-07

申请人： Masaki Narita ,  Yukimasa Yoshida ,  Kei Hattori ,  Katsuya Okumura

发明人： Masaki Narita ,  Yukimasa Yoshida ,  Kei Hattori ,  Katsuya Okumura

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/54 ,  H01J37/32743 ,  H01J37/32834 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/909

摘要： A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate valves. The load and unload chambers are connected to a first vacuum-exhaust mechanism including a common dry pump. The common transfer chamber is connected to a second vacuum-exhaust mechanism including a dry pump. The first and second processes chambers are connected to a third vacuum-exhaust mechanism including a common dry pump, and first and second turbo molecular pumps. The processing apparatus includes a controller which can drive and stop the dry pumps independently of each other in coordination with open/closed switching of the gate valves, while keeping the turbo molecular pumps driven.

摘要翻译： 半导体处理装置包括通过闸阀连接的装载室，卸载室，公共传送室，第一处理室和第二处理室。 装载和卸载室连接到包括普通干式泵的第一真空排气机构。 公共传送室连接到包括干式泵的第二真空排气机构。 第一和第二处理室连接到包括普通干式泵以及第一和第二涡轮分子泵的第三真空排气机构。 处理装置包括控制器，其可以在保持涡轮分子泵被驱动的同时，与闸阀的打开/关闭切换协调地彼此独立地驱动和停止干式泵。

公开(公告)号：US6025117A

公开(公告)日：2000-02-15

申请号：US986517

申请日：1997-12-08

申请人： Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasuhiko Sato ,  Seiro Miyoshi ,  Toru Ushirogouchi ,  Sawako Yoshikawa ,  Hideto Matsuyama ,  Yasunobu Onishi ,  Masaki Narita ,  Toshiro Hiraoka

发明人： Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasuhiko Sato ,  Seiro Miyoshi ,  Toru Ushirogouchi ,  Sawako Yoshikawa ,  Hideto Matsuyama ,  Yasunobu Onishi ,  Masaki Narita ,  Toshiro Hiraoka

IPC分类号： C08G77/60 ,  C08G83/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/00

CPC分类号： C08G83/003 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/091

摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.

摘要翻译： 具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。 聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。 在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。 聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

公开(公告)号：US5976986A

公开(公告)日：1999-11-02

申请号：US689174

申请日：1996-08-06

申请人： Munir D. Naeem ,  Stuart M. Burns ,  Rosemary Christie ,  Virinder Grewal ,  Walter W. Kocon ,  Masaki Narita ,  Bruno Spuler ,  Chi-Hua Yang

发明人： Munir D. Naeem ,  Stuart M. Burns ,  Rosemary Christie ,  Virinder Grewal ,  Walter W. Kocon ,  Masaki Narita ,  Bruno Spuler ,  Chi-Hua Yang

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from, for example, Ti/TiN, are etched in a three step process wherein relatively lower quantities of Cl.sub.2 are used in the plasma during etching of the barrier layers and relatively higher quantities of Cl.sub.2 are used during etching of the bulk aluminum or aluminum alloy layer. The ratio of etchants Cl.sub.2 and HCl and an inert gas, such as N.sub.2 are controlled in a manner such that a very thin side wall layer (10-100 .ANG.) of reaction byproducts created during RIE are deposited on the side walls of trenches formed in the metallization during etching. The side wall layer improves the isotropic nature of the etch such that submicron metallization lines with defect free side walls are formed. Hydrogen (H.sub.2) can be added to the plasma and will act to reduce corrosion.

摘要翻译： 通过使用Cl2和HCl作为反应物种来实现金属化的RIE，通过产生变压器耦合的等离子体，其功率施加到位于要蚀刻的金属化的衬底上方和下方的电极上。 夹在由例如Ti / TiN制成的阻挡层之间的主体铝或铝合金的三层金属化被蚀刻在三步法中，其中在蚀刻阻挡层期间在等离子体中使用相对较少量的Cl 2，并且相对 在大量铝或铝合金层的蚀刻期间使用较高量的Cl 2。 蚀刻剂Cl2和HCl以及惰性气体（例如N 2）的比例被控制为使得在RIE期间产生的反应副产物的非常薄的侧壁层（10-100）沉积在形成的沟槽的侧壁上 蚀刻期间的金属化。 侧壁层改善了蚀刻的各向同性，从而形成具有无缺陷侧壁的亚微米金属化线。 可以将氢（H2）加入到等离子体中，并且起作用以减少腐蚀。