公开(公告)号：US06911398B2

公开(公告)日：2005-06-28

申请号：US10107434

申请日：2002-03-28

申请人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

发明人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/67271 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.

摘要翻译： 一种制造半导体器件的方法，包括制备多个批次，每个批次包括要处理的半导体衬底，所述多个批次至少包括第一批次和第二批次，使用半导体制造装置处理每批的多个批次， 根据第一批次的待处理的第一处理类型和第一批次之后的待处理的第二批次的第二处理类型，判断半导体制造装置是否在处理第二批次之前进行清洁， 并且在第二批次不需要清洁的情况下处理第二批而不进行清洁。

公开(公告)号：US20050215062A1

公开(公告)日：2005-09-29

申请号：US11079098

申请日：2005-03-15

申请人： Osamu Miyagawa ,  Masaki Narita ,  Tokuhisa Ohiwa

发明人： Osamu Miyagawa ,  Masaki Narita ,  Tokuhisa Ohiwa

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/40114

摘要： A method of manufacturing a semiconductor device involves etching a film of a metal oxide formed above a semiconductor substrate, by using an etching gas. The etching gas includes a reducing gas which is capable of reducing the metal oxide and is non-reactive with the metal, and a reactive gas which is capable of etching the metal.

摘要翻译： 制造半导体器件的方法包括通过使用蚀刻气体蚀刻形成在半导体衬底上的金属氧化物的膜。 蚀刻气体包括能够还原金属氧化物并且与金属不反应的还原气体，以及能够蚀刻金属的反应性气体。

公开(公告)号：US06887802B2

公开(公告)日：2005-05-03

申请号：US10456906

申请日：2003-06-09

申请人： Masaki Narita ,  Koichi Sato ,  Tokuhisa Ohiwa

发明人： Masaki Narita ,  Koichi Sato ,  Tokuhisa Ohiwa

IPC分类号： H01L21/768 ,  H01L21/31

CPC分类号： H01L21/76831 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826

摘要： A method of manufacturing a semiconductor device includes forming a first low dielectric constant insulating film over a semiconductor substrate, forming a photoresist pattern on the first low dielectric constant insulating film, etching the first low dielectric constant insulating film to form a concave portion therein, using the photoresist pattern, burying a conductive film in the concave portion after the photoresist pattern is removed, removing an altered layer formed on a sidewall of the concave portion of the first low dielectric constant insulating film after the conductive film is buried, the altered layer being formed when the photoresist pattern is removed, and forming a second low dielectric constant insulating film so as to fill a gap of the sidewall of the concave portion therewith, the gap resulting from removing the altered layer.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一低介电常数绝缘膜，在第一低介电常数绝缘膜上形成光致抗蚀剂图案，蚀刻第一低介电常数绝缘膜以在其中形成凹部，使用 光致抗蚀剂图案，在除去光致抗蚀剂图案之后，在凹部中埋入导电膜，去除在导电膜被埋置之后形成在第一低介电常数绝缘膜的凹部的侧壁上的改变层，改变层为 当除去光致抗蚀剂图案时形成，并且形成第二低介电常数绝缘膜，以便填充凹部的侧壁的间隙，从而去除改变的层。

公开(公告)号：US06274507B1

公开(公告)日：2001-08-14

申请号：US09226723

申请日：1999-01-07

申请人： Masaki Narita ,  Yukimasa Yoshida ,  Kei Hattori ,  Katsuya Okumura

发明人： Masaki Narita ,  Yukimasa Yoshida ,  Kei Hattori ,  Katsuya Okumura

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/54 ,  H01J37/32743 ,  H01J37/32834 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/909

摘要： A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate valves. The load and unload chambers are connected to a first vacuum-exhaust mechanism including a common dry pump. The common transfer chamber is connected to a second vacuum-exhaust mechanism including a dry pump. The first and second processes chambers are connected to a third vacuum-exhaust mechanism including a common dry pump, and first and second turbo molecular pumps. The processing apparatus includes a controller which can drive and stop the dry pumps independently of each other in coordination with open/closed switching of the gate valves, while keeping the turbo molecular pumps driven.

摘要翻译： 半导体处理装置包括通过闸阀连接的装载室，卸载室，公共传送室，第一处理室和第二处理室。 装载和卸载室连接到包括普通干式泵的第一真空排气机构。 公共传送室连接到包括干式泵的第二真空排气机构。 第一和第二处理室连接到包括普通干式泵以及第一和第二涡轮分子泵的第三真空排气机构。 处理装置包括控制器，其可以在保持涡轮分子泵被驱动的同时，与闸阀的打开/关闭切换协调地彼此独立地驱动和停止干式泵。

公开(公告)号：US5660744A

公开(公告)日：1997-08-26

申请号：US492322

申请日：1995-06-19

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.

摘要翻译： 表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。 磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个 多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。 一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于 一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

公开(公告)号：US5444207A

公开(公告)日：1995-08-22

申请号：US37169

申请日：1993-03-26

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： B23K10/00 ,  H01J37/32 ,  H01L21/00 ,  H05H1/18

CPC分类号： H01J37/32623 ,  B23K10/003 ,  H01J37/3266

摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.

摘要翻译： 一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。 该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。 磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

公开(公告)号：US5879863A

公开(公告)日：1999-03-09

申请号：US787390

申请日：1997-01-22

申请人： Tsukasa Azuma ,  Masaki Narita ,  Katsuya Okumura

发明人： Tsukasa Azuma ,  Masaki Narita ,  Katsuya Okumura

IPC分类号： G03F7/004 ,  G03F7/085 ,  G03F7/11 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/085

摘要： Disclosed is a method of forming a pattern, comprising the steps of forming an underlying film on a semiconductor substrate, bringing a vapor of a neutralizer, which generates an acid upon exposure to light, into contact with the surface of the underlying film so as to form a primer layer, coating the primer layer with a chemical amplification resist, and selectively exposing the resist layer to light, followed by developing to form a resist pattern.

摘要翻译： 公开了一种形成图案的方法，包括以下步骤：在半导体衬底上形成下面的膜，使在暴露于光时产生酸的中和剂的蒸汽与下面的膜的表面接触，从而 形成底漆层，用化学放大抗蚀剂涂覆底漆层，并将抗蚀剂层选择性地曝光，随后显影以形成抗蚀剂图案。

公开(公告)号：US20060137988A1

公开(公告)日：2006-06-29

申请号：US11080944

申请日：2005-03-16

申请人： Katsunori Yahashi ,  Keiichi Takenaka ,  Masaki Narita ,  Itsuko Sakai

发明人： Katsunori Yahashi ,  Keiichi Takenaka ,  Masaki Narita ,  Itsuko Sakai

IPC分类号： C25D21/12

CPC分类号： H01J37/32642 ,  H01J37/32935 ,  H01L21/67748 ,  H01L21/681

摘要： According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.

摘要翻译： 根据本发明的一个方面，一种半导体制造装置，包括：处理室，其构造成容纳基板; 电极，设置在所述处理室中，所述基板被放置在所述电极上; 机器人臂构造成将所述基板传送到所述电极; 以及传感器，被配置为检测设置在所述电极的外周边缘部分上的聚焦环的检测图案，所述传感器包围放置在所述电极上的所述基板的周缘，并具有所述检测图案，其中，所述基板和 提供了基于所述传感器的检测结果来调整聚焦环的方法。

公开(公告)号：US06989073B2

公开(公告)日：2006-01-24

申请号：US10742881

申请日：2003-12-23

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： H01L21/306

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

公开(公告)号：US6014963A

公开(公告)日：2000-01-18

申请号：US203847

申请日：1998-12-02

申请人： Masaki Narita

发明人： Masaki Narita

IPC分类号： F02D45/00 ,  F02D41/14 ,  F02D41/00

CPC分类号： F02D41/2454 ,  F02D41/2445 ,  F02D41/2448

摘要： A method and apparatus for controlling the air-fuel ratio in an internal combustion engine wherein, when the operating condition of the internal combustion engine has shifted between learning zones, a learning control updates a correction value after the shift is made in accordance with a stand-by function of a control unit to reduce the occurrence of mislearning, perform the correction value updating learning control efficiently and effect the purification of exhaust gases. In the air-fuel ratio controlling method for the internal combustion engine, when the operating condition of the engine has shifted between learning zones, a learning control updates a correction value in accordance with a stand-by function. In the air-fuel ratio controlling apparatus for the internal combustion engine, a stand-by function is added to the control unit so that, when the operating condition of the engine has shifted between learning zones, a learning control for updating a correction value after the shift is conducted in a delayed manner in accordance with a preset wait count. Further, a stand-by function is added to the control unit so that the correction value updates learning control after the shift is performed, in a delayed manner in accordance with a preset wait time.

摘要翻译： 一种用于控制内燃机中的空燃比的方法和装置，其中，当所述内燃机的运行状态在学习区之间移动时，学习控制在根据支架进行换档之后更新校正值 - 通过控制单元的功能来减少误学的发生，有效地执行校正值更新学习控制并且实现废气的净化。 在内燃机的空燃比控制方法中，当发动机的运转状态在学习区域之间移动时，学习控制根据待机功能更新校正值。 在内燃机的空燃比控制装置中，向控制单元添加备用功能，使得当发动机的运转状态在学习区域之间移动时，用于更新校正值之后的校正值的学习控制 根据预设的等待计数，以延迟的方式进行移位。 此外，将备用功能添加到控制单元，使得校正值根据预设的等待时间以延迟的方式更新移位之后的学习控制。