公开(公告)号：US20120280369A1

公开(公告)日：2012-11-08

申请号：US13498020

申请日：2010-12-15

申请人： Tatsuyuki Saito ,  Kazuhiro Yuasa ,  Yoshiro Hirose ,  Yuji Takebayashi ,  Ryota Sasajima ,  Katsuhiko Yamamoto ,  Hirohisa Yamazaki ,  Shintaro Kogura ,  Hirotaka Hamamura

发明人： Tatsuyuki Saito ,  Kazuhiro Yuasa ,  Yoshiro Hirose ,  Yuji Takebayashi ,  Ryota Sasajima ,  Katsuhiko Yamamoto ,  Hirohisa Yamazaki ,  Shintaro Kogura ,  Hirotaka Hamamura

IPC分类号： C23C16/52 ,  H01L29/02 ,  H01L21/02

CPC分类号： C23C16/45563 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45561 ,  C23C16/45578 ,  C23C16/56 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02356 ,  H01L28/40 ,  H01L28/60

摘要： There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.

摘要翻译： 提供了一种用于制造半导体器件的方法，包括同时或交替地暴露具有层压或暴露的具有不同元素组分的两种或更多种薄膜的衬底; 并对薄膜进行不同的改性处理。

公开(公告)号：USD610559S1

公开(公告)日：2010-02-23

申请号：US29327745

申请日：2008-11-12

申请人： Satoshi Okada ,  Yuji Takebayashi ,  Tsutomu Kato ,  Atsuhiko Ashitani ,  Shintaro Kogura

设计人： Satoshi Okada ,  Yuji Takebayashi ,  Tsutomu Kato ,  Atsuhiko Ashitani ,  Shintaro Kogura

公开(公告)号：US09496134B2

公开(公告)日：2016-11-15

申请号：US13289450

申请日：2011-11-04

申请人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

发明人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/02178

摘要： Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.

摘要翻译： 提供一种能够抑制反应产物或分解物积聚在喷嘴的内壁上并抑制处理室内的异物散射的基板处理装置。 基板处理装置包括处理室，加热单元，源气体供给单元，源气体喷嘴，排气单元以及至少控制加热单元，源气体供给单元和排气单元的控制单元 。 源气体喷嘴设置在处理室中的区域中，即使处理室中的温度高于第一处理气体的热分解温度，第一处理气体也不分解，并且控制单元提供第一处理 气体以不同的流动速度进入处理室两次或更多次以防止第一工艺气体混合。

公开(公告)号：US20120119337A1

公开(公告)日：2012-05-17

申请号：US13289450

申请日：2011-11-04

申请人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

发明人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

IPC分类号： H01L23/58 ,  H01L21/31 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/02178

摘要： Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.

摘要翻译： 提供一种能够抑制反应产物或分解物积聚在喷嘴的内壁上并抑制处理室内的异物散射的基板处理装置。 基板处理装置包括处理室，加热单元，源气体供给单元，源气体喷嘴，排气单元以及至少控制加热单元，源气体供给单元和排气单元的控制单元 。 源气体喷嘴设置在处理室中的区域中，即使处理室中的温度高于第一处理气体的热解温度，第一处理气体也不分解，并且控制单元提供第一处理 气体以不同的流动速度进入处理室两次或更多次以防止第一工艺气体混合。

公开(公告)号：US20100083898A1

公开(公告)日：2010-04-08

申请号：US12458816

申请日：2009-07-23

申请人： Shintaro Kogura ,  Yuji Takebayashi ,  Atsuhiko Ashitani ,  Satoshi Okada

发明人： Shintaro Kogura ,  Yuji Takebayashi ,  Atsuhiko Ashitani ,  Satoshi Okada

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45578 ,  C23C16/405 ,  C23C16/45546 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/67109

摘要： There are provided an inner tube in which a substrate is stored; an outer tube surrounding the inner tube; a gas nozzle disposed in the inner tube; a gas ejection hole opened on the gas nozzle; a gas supply unit supplying gas into the inner tube through the gas nozzle; a gas exhausts hole opened on the side wall of the inner tube; and an exhaust unit exhausting a space between the outer tube and the inner tube and generating a gas flow in the inner tube toward the gas exhaust hole from the gas ejection hole, wherein the side wall of the inner tube is constituted, so that a distance between an outer edge of the substrate and the gas exhaust hole is set to be longer than a distance between the outer edge of the substrate and the gas ejection hole.

摘要翻译： 设置有存储基板的内管; 围绕内管的外管; 设置在内管中的气体喷嘴; 在气体喷嘴上开口的气体喷射孔; 气体供给单元，其通过所述气体喷嘴向所述内管供给气体; 在内管的侧壁上开口的排气孔; 以及排气单元，其排出所述外管和所述内管之间的空间，并且从所述气体喷射孔向所述内管朝向所述排气孔产生气流，其中，所述内管的侧壁被构成， 基板的外缘与排气孔之间的距离设定为比基板的外缘和气体喷出孔的距离长。