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1.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE 审中-公开制造半导体器件的方法，衬底加工设备和半导体器件公开(公告)号：US20120280369A1
公开(公告)日：2012-11-08
申请号：US13498020
申请日：2010-12-15
申请人： Tatsuyuki Saito , Kazuhiro Yuasa , Yoshiro Hirose , Yuji Takebayashi , Ryota Sasajima , Katsuhiko Yamamoto , Hirohisa Yamazaki , Shintaro Kogura , Hirotaka Hamamura
发明人： Tatsuyuki Saito , Kazuhiro Yuasa , Yoshiro Hirose , Yuji Takebayashi , Ryota Sasajima , Katsuhiko Yamamoto , Hirohisa Yamazaki , Shintaro Kogura , Hirotaka Hamamura
CPC分类号： C23C16/45563 , C23C16/34 , C23C16/405 , C23C16/45527 , C23C16/45561 , C23C16/45578 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L28/40 , H01L28/60
摘要： There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.
摘要翻译： 提供了一种用于制造半导体器件的方法，包括同时或交替地暴露具有层压或暴露的具有不同元素组分的两种或更多种薄膜的衬底; 并对薄膜进行不同的改性处理。
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2.发明授权Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device 有权半导体装置的制造方法，基板处理装置及半导体装置公开(公告)号：US08866271B2
公开(公告)日：2014-10-21
申请号：US13250708
申请日：2011-09-30
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02345 , H01L28/40
摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。
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3.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE 有权半导体器件制造方法，衬底加工设备和半导体器件公开(公告)号：US20120086107A1
公开(公告)日：2012-04-12
申请号：US13250708
申请日：2011-09-30
IPC分类号： H01L29/02 , H01L21/26 , C23C16/511
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02345 , H01L28/40
摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。
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公开(公告)号：USD655682S1
公开(公告)日：2012-03-13
申请号：US29378011
申请日：2010-10-28
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公开(公告)号：USD655255S1
公开(公告)日：2012-03-06
申请号：US29378016
申请日：2010-10-28
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6.发明授权Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权制造半导体器件，衬底处理设备和半导体器件的方法公开(公告)号：US09466477B2
公开(公告)日：2016-10-11
申请号：US12849398
申请日：2010-08-03
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译： 提供了制造半导体器件，衬底处理设备和半导体器件的方法。 该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。 该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。 该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。
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公开(公告)号：US08857890B2
公开(公告)日：2014-10-14
申请号：US13702326
申请日：2011-06-03
CPC分类号： B60J5/047 , E05F15/145 , E05F15/146 , E05F15/643 , E05F15/646 , E05Y2900/531 , H02K1/2733 , H02K1/30 , H02K5/24 , H02K7/1004 , H02K7/116
摘要： A hypocycloid reducer 70 for reducing rotation of a flat motor 60 to output the speed-reduced rotation to a drum is provided between the drum and the flat motor 60, a rotor shalt member 65 which is rotated with the same rotation number as the flat motor 60 is axially aligned with the drum is provided on the same side as the flat motor 60. An output rotation body 74 for outputting the speed-reduced rotation is axially aligned with the drum and provided on the same side as the drum. Since the rotor shaft member 65 and the output rotation body 74 are axially aligned with the drum, turning force can be transmitted bi-directionally between the rotor shaft member 65 and the output rotation body 74. Therefore, it is possible to eliminate an electromagnetic clutch to reduce the driving apparatus in size and weight, and since wires and control logic of the electromagnetic clutch are not needed for the driving apparatus, the driving apparatus can be reduced in production cost.
摘要翻译： 在鼓和平面电动机60之间设置有用于减小平面电动机60的旋转以将减速旋转输出到鼓的低音圈减速器70，以与平面电动机相同的转数旋转的转子轴部件65 60与滚筒轴向对齐设置在与平坦马达60相同的一侧上。用于输出减速旋转的输出旋转体74与滚筒轴向对齐并设置在与滚筒相同的一侧。 由于转子轴构件65和输出旋转体74与滚筒轴向对准，因此转动力可以在转子轴构件65和输出旋转体74之间双向传递。因此，可以消除电磁离合器 以减小驱动装置的尺寸和重量，并且由于驱动装置不需要电磁离合器的电线和控制逻辑，所以可以降低驱动装置的生产成本。
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公开(公告)号：US08643247B2
公开(公告)日：2014-02-04
申请号：US13859470
申请日：2013-04-09
IPC分类号： H02K13/00
CPC分类号： H02K3/28 , H02K7/1166 , H02K13/10 , H02K23/04 , H02K23/34
摘要： Disclosed is an electric motor including a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled on the yoke, an armature core formed with a plurality of teeth and fixed onto the rotary shaft, an armature coil wound around the teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a connecting wire connecting two segments arranged to face each other back to back around the rotary shaft, the armature being surrounded by the permanent magnets and accommodated within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.
摘要翻译： 公开了一种电动马达，其包括形成为有底圆筒形状的磁轭; 设置在所述轭的内周面上的永磁体; 一个电枢，包括一个轴颈轴颈上的旋转轴，一个形成有多个齿并固定在旋转轴上的电枢铁芯，一个缠绕在电枢铁心上的电枢线圈，一个具有多个段的换向器，并固定在 旋转轴和连接线，其将彼此相对地彼此面对地布置成围绕旋转轴彼此相对地连接，电枢被永磁体包围并容纳在轭内; 以及第一刷子，第二刷子和与衔铁的换向器的段滑动接触的第三刷子。
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公开(公告)号：US08618712B2
公开(公告)日：2013-12-31
申请号：US13859458
申请日：2013-04-09
IPC分类号： H02K13/00
CPC分类号： H02K3/28 , H02K7/1166 , H02K13/10 , H02K23/04 , H02K23/34
摘要： Disclosed is a windshield wiper motor having a reduction mechanism unit and an electric motor. The electric motor of the windshield wiper motor includes a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled to the yoke, an armature core where a plurality of teeth are formed and fixed onto the rotary shaft, an armature coil wound around teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a plurality of connecting wires connecting two segments arranged to face each other back to back around the rotary shaft, being surrounded by the permanent magnets and arranged within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.
摘要翻译： 公开了一种具有减速机构单元和电动机的挡风玻璃刮水器电动机。 挡风玻璃刮水器电动机的电动机包括形成为有底圆筒形的磁轭; 设置在所述轭的内周面上的永磁体; 一个电枢，包括一个旋转轴，该旋转轴安装在磁轭上，一个电枢磁芯，其中多个齿形成并固定在旋转轴上，电枢线圈缠绕在电枢铁芯的齿上，一个换向器具有多个段并固定在 旋转轴和多个连接线，其连接两个彼此相对地相对地彼此相对地相对地布置的旋转轴，所述多个连接线被所述永磁体包围并设置在所述轭内; 以及第一刷子，第二刷子和与衔铁的换向器的段滑动接触的第三刷子。
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10.发明申请Method of manufacturing a semiconductor device and substrate processing apparatus 审中-公开半导体器件和衬底处理设备的制造方法公开(公告)号：US20100297846A1
公开(公告)日：2010-11-25
申请号：US12801082
申请日：2010-05-20
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai
IPC分类号： H01L21/285 , C23C16/06 , C23C16/34
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45544 , H01L21/76841
摘要： A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process. It thus becomes possible to provide a dense, low-resistive metal film having a smooth film surface with a better quality in comparison with a titanium nitride film formed by the CVD method at a higher deposition rate, that is, at a higher productivity, in comparison with a titanium nitride film formed by the ALD method at a low temperature.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过交替地供给至少一种作为无机原料的金属化合物和具有反应性的反应物气体，在放置在处理室中的基板上形成第一金属膜 金属化合物对处理室不止一次; 通过同时将至少一种作为无机原料的金属化合物和与金属化合物具有反应性的反应物气体同时供给到处理室，从而在基板上形成第二金属膜，使得金属化合物和反应气体 相互混合; 并且在交替供给处理和同时供给处理中的至少一个之后，使用至少一种反应气体和惰性气体来修饰第一金属膜和第二金属膜中的至少一个。 因此，与通过CVD法形成的氮化钛膜以更高的生产率，即更高的生产率相比，可以提供具有光滑膜表面的致密的低电阻金属膜，具有更好的质量 与在低温下通过ALD法形成的氮化钛膜进行比较。
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