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    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    非挥发性半导体存储器件及其制造方法

    公开(公告)号：US20100123183A1

    公开(公告)日：2010-05-20

    申请号：US12622816

    申请日：2009-11-20

    申请人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    发明人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    IPC分类号： H01L29/792 ,  H01L21/336

    CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

    摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

    摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

    Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation
    3.
    发明授权
    Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation 有权
    通过等离子体成膜法和等离子体氮化法制造非易失性半导体存储器件的方法

    公开(公告)号：US08084315B2

    公开(公告)日：2011-12-27

    申请号：US12622816

    申请日：2009-11-20

    申请人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    发明人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/792

    CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

    摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

    摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

    Nonvolatile semiconductor storage device and manufacturing method thereof
    6.
    发明授权
    Nonvolatile semiconductor storage device and manufacturing method thereof 失效
    非易失性半导体存储装置及其制造方法

    公开(公告)号：US07719051B2

    公开(公告)日：2010-05-18

    申请号：US12186488

    申请日：2008-08-05

    申请人： Hirotaka Hamamura ,  Itaru Yanagi ,  Toshiyuki Mine

    发明人： Hirotaka Hamamura ,  Itaru Yanagi ,  Toshiyuki Mine

    IPC分类号： H01L29/792

    CPC分类号： H01L29/4234 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/792

    摘要： A charge holding insulating film in a memory cell is constituted by a laminated film composed of a bottom insulating film, a charge storage film, and a top insulating film on a semiconductor substrate. Further, by performing a plasma nitriding treatment to the bottom insulating film, a nitride region whose nitrogen concentration has a peak value and is 1 atom % or more is formed on the upper surface side in the bottom insulating film. The thickness of the nitride region is set to 0.5 nm or more and 1.5 nm or less, and the peak value of nitrogen concentration is set to 5 atom % or more and 40 atom % or less, and a position of the peak value of nitrogen concentration is set within 2 nm from the upper surface of the bottom insulating film, thereby suppressing an interaction between the bottom insulating film and the charge storage film.

    摘要翻译： 存储单元中的电荷保持绝缘膜由半导体衬底上的底部绝缘膜，电荷存储膜和顶部绝缘膜构成的层叠膜构成。 此外，通过对底部绝缘膜进行等离子体氮化处理，在底部绝缘膜的上表面侧形成氮浓度为1原子％以上的氮化物区域。 将氮化物区域的厚度设定为0.5nm以上至1.5nm以下，将氮浓度的峰值设定为5原子％以上且40原子％以下，将氮的峰值的位置 浓度从底部绝缘膜的上表面设定在2nm以内，从而抑制底部绝缘膜与电荷存储膜之间的相互作用。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20090275183A1

    公开(公告)日：2009-11-05

    申请号：US12429236

    申请日：2009-04-24

    申请人： Toshiyuki Mine ,  Hirotaka Hamamura

    发明人： Toshiyuki Mine ,  Hirotaka Hamamura

    IPC分类号： H01L21/336 ,  H01L21/22 ,  H01L21/762

    CPC分类号： H01L29/7833 ,  H01L21/76224 ,  H01L29/6659

    摘要： A thermal oxidation method capable of obtaining a high oxidation rate by generating a sufficient enhanced-rate oxidation phenomenon even in a low temperature region is provided. In addition, a thermal oxidation method capable of forming a silicon oxide film having a high reliability even when formed at a low temperature region. A basic concept herein is to form a silicon oxide film by thermal reaction by generating a large amount of oxygen radicals (O*) having a large reactivity without using plasma. More specifically, ozone (O3) and other active gas are reacted, so that ozone (O3) is decomposed highly efficiently even in a low temperature region, thereby generating a large amount of oxygen radicals (O*). For example, a compound gas containing a halogen element can be used as the active gas.

    摘要翻译： 提供了能够通过即使在低温区域产生足够的增强率氧化现象而能够获得高氧化率的热氧化法。 另外，即使在低温区域形成的情况下也能够形成具有高可靠性的氧化硅膜的热氧化法。 本文的基本概念是通过在不使用等离子体的情况下产生大量反应性的大量氧自由基（O *），通过热反应形成氧化硅膜。 更具体地，臭氧（O 3）和其它活性气体反应，使得即使在低温区域也高效地分解臭氧（O 3），从而产生大量的氧自由基（O *）。 例如，可以使用含有卤素元素的复合气体作为活性气体。

    Semiconductor device and manufacturing method thereof
    8.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US06777296B2

    公开(公告)日：2004-08-17

    申请号：US10321501

    申请日：2002-12-18

    申请人： Shimpei Tsujikawa ,  Toshiyuki Mine ,  Jiro Yugami ,  Hirotaka Hamamura

    发明人： Shimpei Tsujikawa ,  Toshiyuki Mine ,  Jiro Yugami ,  Hirotaka Hamamura

    IPC分类号： H01L21336

    CPC分类号： H01L21/28185 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

    摘要： Disclosed is a method of improving smoothness on a surface of a gate dielectric composed of a high dielectric film made of metal oxide. A dielectric film with a high permittivity made of metal oxide such as a TiO2 film or a ZrO2 film having an amorphous structure is deposited over a silicon substrate by the plasma enhanced chemical vapor deposition method, and the film is used as a gate dielectric. Since the gate dielectric has good surface smoothness, simultaneous reductions of both the film thickness of a gate dielectric and the gate leakage current can be achieved. In addition, it is also possible to reduce the variation in the characteristics of the devices.

    摘要翻译： 公开了一种提高由金属氧化物构成的高电介质膜构成的栅极电介质的表面的平滑度的方法。 通过等离子体增强化学气相沉积法在硅衬底上沉积具有由诸如TiO 2膜或具有无定形结构的ZrO 2膜的金属氧化物的高介电常数的介电膜，并且该膜用作栅极电介质。 由于栅极电介质具有良好的表面平滑度，因此可以实现栅极电介质的膜厚度和栅极漏电流的同时减小。 此外，还可以减小装置的特性的变化。

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    10.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    硅碳化硅半导体器件

    公开(公告)号：US20130234163A1

    公开(公告)日：2013-09-12

    申请号：US13884956

    申请日：2011-03-29

    申请人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    发明人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66477 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7802

    摘要： A MOSFET having a high mobility may be obtained by introducing nitrogen to the channel region or the interface between the gate dielectric film and the SiC substrate of the SiC MOSFET, but there is a problem that a normally-on MOSFET is obtained. For realizing both a high mobility and normally-off, and for providing a SiC MOSFET having further high reliability, nitrogen is introduced to the channel region of the SiC substrate or the interface between the gate dielectric film and the SiC substrate, and furthermore a metal oxide film having a thickness of 10%, or less of the total thickness of the gate dielectric film is inserted in the gate dielectric film.

    摘要翻译： 可以通过将氮引入SiC MOSFET的栅极电介质膜和SiC衬底之间的沟道区域或界面来获得具有高迁移率的MOSFET，但是存在通常导通的MOSFET的问题。 为了实现高迁移率和常态化，并且为了提供具有更高可靠性的SiC MOSFET，氮气被引入到SiC衬底的沟道区域或栅极电介质膜和SiC衬底之间的界面，此外，金属 厚度为栅极电介质膜的总厚度的10％以下的氧化膜被插入到栅极电介质膜中。