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    Hydrogen absorbing alloy electrode, method of fabricating hydrogen absorbing alloy electrode, and alkali secondary battery
    1.
    发明授权
    Hydrogen absorbing alloy electrode, method of fabricating hydrogen absorbing alloy electrode, and alkali secondary battery 失效
    吸氢合金电极，制备吸氢合金电极的方法和碱二次电池

    公开(公告)号：US06358647B1

    公开(公告)日：2002-03-19

    申请号：US09374998

    申请日：1999-08-16

    申请人： Teruhiko Imoto ,  Kikuko Kato ,  Yasushi Kuroda ,  Nobuyuki Higashiyama ,  Mamoru Kimoto ,  Shin Fujitani ,  Koji Nishio

    发明人： Teruhiko Imoto ,  Kikuko Kato ,  Yasushi Kuroda ,  Nobuyuki Higashiyama ,  Mamoru Kimoto ,  Shin Fujitani ,  Koji Nishio

    IPC分类号： H01M438

    CPC分类号： H01M4/383 ,  Y10S420/90

    摘要： In the present invention, a hydrogen absorbing alloy containing at least nickel, cobalt and aluminum, in which the sum a of the respective abundance ratios of cobalt atoms and aluminum atoms in a portion to a depth of 30 Å from its surface and the sum b of the respective abundance ratios of cobalt atoms and aluminum atoms in a bulk region inside thereof satisfy conditions of a/b≧1.30, or a hydrogen absorbing alloy containing at least nickel, cobalt, aluminum and manganese, in which the sum A of the respective abundance ratios of cobalt atoms, aluminum atoms and manganese atoms in a portion to a depth of 30 Å from its surface and the sum B of the respective abundance ratios of cobalt atoms, aluminum atoms and manganese atoms in a bulk region inside thereof satisfy conditions A/B≧1.20 is used for a hydrogen absorbing alloy electrode in an alkali secondary battery.

    摘要翻译： 在本发明中，至少含有镍，钴和铝的吸氢合金，其中钴原子和铝原子的相应丰度比从其表面到深度的一部分的总和a与总和b 在其内部的本体区域中的钴原子和铝原子的相应丰度比满足a / b> = 1.30的条件，或至少含有镍，钴，铝和锰的吸氢合金，其中， 在其表面深度为一部分的钴原子，铝原子和锰原子的丰度比例以及其内部的本体区域中钴原子，铝原子和锰原子的相应丰度比的总和B满足条件 A / B> = 1.20用于碱性二次电池中的吸氢合金电极。

    Method of fabricating hydrogen absorbing alloy electrode
    2.
    发明授权
    Method of fabricating hydrogen absorbing alloy electrode 失效
    制备吸氢合金电极的方法

    公开(公告)号：US5985057A

    公开(公告)日：1999-11-16

    申请号：US978271

    申请日：1997-11-25

    申请人： Teruhiko Imoto ,  Kikuko Kato ,  Yasushi Kuroda ,  Nobuyuki Higashiyama ,  Mamoru Kimoto ,  Shin Fujitani ,  Koji Nishio

    发明人： Teruhiko Imoto ,  Kikuko Kato ,  Yasushi Kuroda ,  Nobuyuki Higashiyama ,  Mamoru Kimoto ,  Shin Fujitani ,  Koji Nishio

    IPC分类号： H01M4/38 ,  H01M4/04

    CPC分类号： H01M4/383 ,  Y10S420/90

    摘要： In the present invention, a hydrogen absorbing alloy containing at least nickel, cobalt and aluminum, in which the sum a of the respective abundance ratios of cobalt atoms and aluminum atoms in a portion to a depth of 30 .ANG. from its surface and the sum b of the respective abundance ratios of cobalt atoms and aluminum atoms in a bulk region inside thereof satisfy conditions of a/b.gtoreq.1.30, or a hydrogen absorbing alloy containing at least nickel, cobalt, aluminum and manganese, in which the sum A of the respective abundance ratios of cobalt atoms, aluminum atoms and manganese atoms in a portion to a depth of 30 .ANG. from its surface and the sum B of the respective abundance ratios of cobalt atoms, aluminum atoms and manganese atoms in a bulk region inside thereof satisfy conditions A/B.gtoreq.1.20 is used for a hydrogen absorbing alloy electrode in an alkali secondary battery.

    摘要翻译： 在本发明中，至少含有镍，钴和铝的吸氢合金，其中钴原子和铝原子的丰度比值与其表面的深度相差30 ANGSTROM的和总和b 在其内部的本体区域中的钴原子和铝原子的相应丰度比满足a / b> / = 1.30的条件，或至少含有镍，钴，铝和锰的吸氢合金，其中A 钴酸根，铝原子和锰原子在其表面的深度为30 ANGSTROM的部分中的丰度比和其内部的体区域中钴原子，铝原子和锰原子的丰度比的总和B满足 条件A / B> / = 1.20用于碱性二次电池中的吸氢合金电极。

    Antimicrobial and antiviral composition, and method of producing the same
    6.
    发明授权
    Antimicrobial and antiviral composition, and method of producing the same 有权
    抗微生物和抗病毒组合物及其制备方法

    公开(公告)号：US08889164B2

    公开(公告)日：2014-11-18

    申请号：US13878026

    申请日：2012-10-04

    申请人： Kazuhito Hashimoto ,  Kayano Sunada ,  Masahiro Miyauchi ,  Ding Li ,  Yasushi Kuroda

    发明人： Kazuhito Hashimoto ,  Kayano Sunada ,  Masahiro Miyauchi ,  Ding Li ,  Yasushi Kuroda

    IPC分类号： A01N59/20 ,  A01N25/00

    CPC分类号： A01N59/20 ,  A01N43/16 ,  A01N2300/00

    摘要： An antimicrobial and antiviral composition, a method of producing the same, and the like are provided, which are capable of exhibiting an excellent antimicrobial and antiviral properties over a long time in the application for various uses. The antimicrobial and antiviral composition contains cuprous oxide particles having a BET specific surface area of 5 to 100 m2/g and a saccharide having an aldehyde group, in which the content of the saccharide with an aldehyde group is 0.5 to 10 mass part based on the cuprous oxide particles of 100 mass part. The method produces this composition.

    摘要翻译： 提供抗微生物和抗病毒组合物，其制备方法等，其在各种用途的应用中能够在长时间内表现出优异的抗菌和抗病毒性能。 抗微生物剂和抗病毒组合物含有BET比表面积为5〜100m 2 / g的氧化亚铜粒子和具有醛基的糖类，其中醛类的糖含量为0.5〜10质量份 氧化亚铜颗粒为100质量份。 该方法产生该组合物。

    Compensated surface acoustic wave filter having a longitudinal mode resonator connected with a second resonator
    7.
    发明授权
    Compensated surface acoustic wave filter having a longitudinal mode resonator connected with a second resonator 有权
    具有与第二谐振器连接的纵向模式谐振器的补偿表面声波滤波器

    公开(公告)号：US06501208B1

    公开(公告)日：2002-12-31

    申请号：US09462483

    申请日：2000-02-22

    申请人： Yasushi Kuroda

    发明人： Yasushi Kuroda

    IPC分类号： H01L4104

    CPC分类号： H03H9/6436 ,  H03H9/14538 ,  H03H9/6426

    摘要： A surface acoustic wave filter having a first surface acoustic wave resonator 10 which is a two-port resonator utilizing longitudinal mode coupling and a second surface acoustic wave resonator 20 connected to a series arm of the first surface acoustic wave resonator 10 on a piezoelectric substrate. The duty of the second surface acoustic wave resonator 20 is set to be smaller than the duty of the first surface acoustic wave resonator 10. Consequently the reflectance per electrode finger of the second surface acoustic wave resonator 20 can be smaller than that of the first surface acoustic wave resonator 10. Therefore, even when the effect of the inductance component is added to the characteristics of the second surface acoustic wave resonator 20, the increase of the difference between the resonance frequency fr and the anti-resonance frequency far can be suppressed. Therefore, the filter loss is low at the high frequency side of the pass band of the surface acoustic wave filter, and an excellent attenuation characteristics are obtained in a vicinity of the high frequency side of the pass band.

    摘要翻译： 一种表面声波滤波器，具有第一表面声波谐振器10，其是利用纵模耦合的双端口谐振器，以及在压电基板上连接到第一声表面波谐振器10的串联臂的第二声表面波谐振器20。 第二表面声波谐振器20的占空比被设定为小于第一声表面波谐振器10的占空比。因此，第二声表面波谐振器20的每个电极指的反射率可以小于第一表面声波谐振器20的占空比。 因此，即使当第二声表面波谐振器20的特性增加电感分量的影响时，也可以抑制谐振频率fr与反共振频率之间的差异的增大。 因此，表面声波滤波器的通带的高频侧的滤波器损耗低，在通带的高频侧附近得到良好的衰减特性。

    Surface acoustic wave element with an input/output ground pattern forming capacitance with both the input and output signal patterns
    8.
    发明授权
    Surface acoustic wave element with an input/output ground pattern forming capacitance with both the input and output signal patterns 有权
    具有输入/输出接地图形的表面声波元件形成具有输入和输出信号图案的电容

    公开(公告)号：US06404303B1

    公开(公告)日：2002-06-11

    申请号：US09623461

    申请日：2000-09-12

    申请人： Yasushi Kuroda

    发明人： Yasushi Kuroda

    IPC分类号： H03H964

    CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2924/16195 ,  H03H9/0542 ,  H03H9/059 ,  H03H9/6436

    摘要： Due to flip-chip assembling, a surface acoustic wave device can be miniaturized and improved in high frequency characteristics. Despite that, since a resonant system cannot be formed due to an absence of inductance of bonding wire, there is a problem that an attenuation region cannot be disposed in a frequency band apart from the pass band. In order to solve the problem, ground terminal wired to interdigital electrodes of a two-port surface acoustic wave element is extended facing to facing to both output sides of both input and output signal terminals to form capacitance. Due to a resonant system including the capacitance, in a frequency band apart from a pass band of the surface acoustic wave element an attenuation region is formed. Thereby, a surface acoustic wave device that is flexibly adjustable of frequency characteristics in response to system request, can be miniaturized and is improved in characteristics out of band is provided.

    摘要翻译： 由于倒装芯片组装，所以能够使声表面波装置小型化并且提高高频特性。 尽管如此，由于由于没有接合线的电感而不能形成谐振系统，所以存在衰减区域不能配置在与通带分开的频带内的问题。 为了解决这个问题，连接到双端口声表面波元件的叉指电极的接地端子面向着面向输入和输出信号端子的两个输出侧而形成电容。 由于包括电容的谐振系统，在与表面声波元件的通带分开的频带中形成衰减区域。 由此，响应于系统要求能够灵活调整频率特性的声表面波装置可以小型化，并提供特性带外。

    Surface acoustic wave element having two filters with more IDTs in the lower frequency filter
    9.
    发明授权
    Surface acoustic wave element having two filters with more IDTs in the lower frequency filter 有权
    表面声波元件具有在较低频率滤波器中具有更多IDT的两个滤波器

    公开(公告)号：US06366179B1

    公开(公告)日：2002-04-02

    申请号：US09419285

    申请日：1999-10-15

    申请人： Yasushi Kuroda

    发明人： Yasushi Kuroda

    IPC分类号： H03H972

    CPC分类号： H03H9/6436 ,  H03H9/14588 ,  H03H9/6469 ,  H03H2250/00

    摘要： A surface acoustic wave element, comprising a piezoelectric substrate, a first surface acoustic wave resonant filter having a first IDT group consisting of a conductive film disposed on the piezoelectric substrate to utilizing longitudinal resonance mode coupling, and having a first passband, and a second surface acoustic wave resonant filter having a second IDT group consisting of a conductive film disposed on the piezoelectric substrate to utilizing longitudinal resonance mode coupling, and having a second passband of higher frequency than that of the first passband, wherein a number of IDTs constituting the first IDT group is more than that of the IDTs constituting the second IDT group.

    摘要翻译： 一种表面声波元件，包括压电基片，第一声表面波谐振滤波器，具有第一IDT组，第一IDT组由设置在压电基片上的导电膜组成，以利用纵向共振模耦合，并具有第一通带，第二表面 声波谐振滤波器，具有由布置在压电基板上的导电膜构成的第二IDT组，以利用纵向谐振模式耦合，并且具有比第一通带高的频率的第二通带，其中构成第一IDT的多个IDT 组比构成第二IDT组的IDT的组更多。