Substrate processing method, storage medium storing computer program for performing substrate processing method, and substrate processing apparatus
    1.
    发明授权
    Substrate processing method, storage medium storing computer program for performing substrate processing method, and substrate processing apparatus 有权
    基板处理方法,存储用于执行基板处理方法的计算机程序的存储介质和基板处理装置

    公开(公告)号:US08906165B2

    公开(公告)日:2014-12-09

    申请号:US13161714

    申请日:2011-06-16

    IPC分类号: B08B7/04 H01L21/02 H01L21/67

    摘要: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

    摘要翻译: 在本发明的基板处理方法中,首先使用化学液处理基板。 接下来,在旋转基板的同时通过供给冲洗液来冲洗基板。 此后,在旋转基板的同时干燥基板。 基板的干燥包括在冲洗衬底期间将衬底的旋转速度降低到低于衬底的旋转速度,同时将冲洗液体供应到衬底的中心部分; 在基板的旋转速度降低到第一旋转速度之后,从基板的中心部朝向其周边部分移动供给冲洗液体的冲洗液体供给位置; 并且在冲洗液体供应位置已经移动之后将干燥液体供应到基底。

    SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS
    2.
    发明申请
    SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS 有权
    基板处理方法,用于执行基板处理方法的存储介质存储计算机程序和基板处理装置

    公开(公告)号:US20110308549A1

    公开(公告)日:2011-12-22

    申请号:US13161714

    申请日:2011-06-16

    IPC分类号: B08B3/08 B08B7/04

    摘要: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

    摘要翻译: 在本发明的基板处理方法中,首先使用化学液处理基板。 接下来,在旋转基板的同时通过供给冲洗液来冲洗基板。 此后,在旋转基板的同时干燥基板。 基板的干燥包括在冲洗衬底期间将衬底的旋转速度降低到低于衬底的旋转速度,同时将冲洗液体供应到衬底的中心部分; 在基板的旋转速度降低到第一旋转速度之后,从基板的中心部朝向其周边部分移动供给冲洗液体的冲洗液体供给位置; 并且在冲洗液体供应位置已经移动之后将干燥液体供应到基底。

    Substrate Processing Method and Substrate Processing Apparatus
    3.
    发明申请
    Substrate Processing Method and Substrate Processing Apparatus 有权
    基板加工方法及基板加工装置

    公开(公告)号:US20120164840A1

    公开(公告)日:2012-06-28

    申请号:US13332652

    申请日:2011-12-21

    IPC分类号: H01L21/306 B08B3/00 B08B7/04

    CPC分类号: H01L21/67028 H01L21/67051

    摘要: A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

    摘要翻译: 基板处理方法包括将处理液供给到基板上以处理基板的液体处理工序; 对形成有处理液的液膜的基板进行加热的加热工序; 向形成处理液的液膜的基板供给挥发性处理液的供给工序; 停止向基板供应挥发性处理液的停止处理; 以及通过除去挥发性处理液体而干燥基板的干燥工序,其中加热过程在供应挥发性处理液和基板的供应过程开始之前开始,使得基板的表面温度高于露点 在基板的表面从挥发性处理液体露出之前。

    Cleaning apparatus, cleaning method and recording medium
    4.
    发明授权
    Cleaning apparatus, cleaning method and recording medium 有权
    清洁装置,清洁方法和记录介质

    公开(公告)号:US08308870B2

    公开(公告)日:2012-11-13

    申请号:US12610599

    申请日:2009-11-02

    IPC分类号: B08B3/08

    CPC分类号: H01L21/67051

    摘要: Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.

    摘要翻译: 公开了一种清洁装置和清洁方法,其可以在基板经受清洁处理之后收集化学液体而不降低生产量,并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理,漂洗处理和IPA干燥处理,并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯,在清洗液未供给到晶片的状态下。 此外,该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后,控制单元在进行清洁处理,然后进行晶片W的漂洗处理之后,控制向排水杯供给的清洗液。

    CLEANING APPARATUS, CLEANING METHOD AND RECORDING MEDIUM
    5.
    发明申请
    CLEANING APPARATUS, CLEANING METHOD AND RECORDING MEDIUM 有权
    清洁装置,清洁方法和记录介质

    公开(公告)号:US20100108103A1

    公开(公告)日:2010-05-06

    申请号:US12610599

    申请日:2009-11-02

    IPC分类号: B08B3/00

    CPC分类号: H01L21/67051

    摘要: Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.

    摘要翻译: 公开了一种清洁装置和清洁方法,其可以在基板经受清洁处理之后收集化学液体而不降低生产量,并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理,漂洗处理和IPA干燥处理,并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯,在清洗液未供给到晶片的状态下。 此外,该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后,控制单元在进行清洁处理,然后进行晶片W的漂洗处理之后,控制向排水杯供给的清洗液。

    Substrate processing method and substrate processing apparatus
    6.
    发明授权
    Substrate processing method and substrate processing apparatus 有权
    基板处理方法和基板处理装置

    公开(公告)号:US08978671B2

    公开(公告)日:2015-03-17

    申请号:US13332652

    申请日:2011-12-21

    IPC分类号: B08B3/00 H01L21/67

    CPC分类号: H01L21/67028 H01L21/67051

    摘要: An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

    摘要翻译: 一种设备,包括:处理液供应单元; 挥发性处理液体供应单元; 基板加热单元; 以及控制器,用于控制所述挥发性处理液体供应单元和所述基板加热单元,其中所述控制器执行将处理液体供应到所述基板的处理,对其上形成有所述处理液体的液体膜的基板进行加热的处理, 提供挥发性处理液的处理,停止供给挥发性处理液的处理,以及通过除去挥发性处理液来干燥基板的工序,并且,在供给工序之前开始加热基板 并且所述基板加热单元加热所述基板,使得所述基板的表面温度高于在所述基板的表面从所述挥发性处理液体露出之前的露点。