公开(公告)号：US20110308549A1

公开(公告)日：2011-12-22

申请号：US13161714

申请日：2011-06-16

申请人： Teruomi MINAMI ,  Naoyuki Okamura ,  Hirotaka Maruyama ,  Yosuke Kawabuchi

发明人： Teruomi MINAMI ,  Naoyuki Okamura ,  Hirotaka Maruyama ,  Yosuke Kawabuchi

IPC分类号： B08B3/08 ,  B08B7/04

CPC分类号： H01L21/67028 ,  H01L21/02052 ,  H01L21/67051

摘要： In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

摘要翻译： 在本发明的基板处理方法中，首先使用化学液处理基板。 接下来，在旋转基板的同时通过供给冲洗液来冲洗基板。 此后，在旋转基板的同时干燥基板。 基板的干燥包括在冲洗衬底期间将衬底的旋转速度降低到低于衬底的旋转速度，同时将冲洗液体供应到衬底的中心部分; 在基板的旋转速度降低到第一旋转速度之后，从基板的中心部朝向其周边部分移动供给冲洗液体的冲洗液体供给位置; 并且在冲洗液体供应位置已经移动之后将干燥液体供应到基底。

公开(公告)号：US20110315169A1

公开(公告)日：2011-12-29

申请号：US13161721

申请日：2011-06-16

申请人： Teruomi MINAMI ,  Naoyuki Okamura ,  Yosuke Kawabuchi

发明人： Teruomi MINAMI ,  Naoyuki Okamura ,  Yosuke Kawabuchi

IPC分类号： B08B3/00

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid.Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

摘要翻译： 在根据本发明的基板处理方法中，清洗液喷嘴将冲洗液体提供到基板的中心部分，然后从与基板的中心部分相对应的位置移动到对应于周边边缘部分的位置 同时在与周缘部对应的位置停止前供给冲洗液。 接着，在供给干燥液的同时，将干燥液喷嘴从对应于周缘部的位置移动到与中央部对应的位置。 然后，在供给干燥液体的同时，将干燥液喷嘴保持静止在与中央部分对应的位置一段预定的时间。 此后，在供给惰性气体的同时，气体喷嘴从对应于中心部分的位置移动到对应于周边边缘部分的位置。

公开(公告)号：US20110089137A1

公开(公告)日：2011-04-21

申请号：US12902721

申请日：2010-10-12

申请人： Hiroshi TANAKA ,  Teruomi MINAMI ,  Yosuke KAWABUCHI ,  Norihiro ITO ,  Fumihiro KAMIMURA ,  Takashi YABUTA ,  Kazuki KOSAI ,  Takeshi UNO ,  Kenji SEKIGUCHI ,  Yasushi FUJII

发明人： Hiroshi TANAKA ,  Teruomi MINAMI ,  Yosuke KAWABUCHI ,  Norihiro ITO ,  Fumihiro KAMIMURA ,  Takashi YABUTA ,  Kazuki KOSAI ,  Takeshi UNO ,  Kenji SEKIGUCHI ,  Yasushi FUJII

IPC分类号： H05K3/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

摘要翻译： 提供一种基板液体处理装置，基板液体处理方法以及其中存储有基板液体处理程序的计算机可读存储介质，其可以防止由基板中的电荷放电引起的静电破坏的发生。 基板液体处理装置用化学液体处理基板的电路形成表面。 此外，在用化学液体处理基板之前，基板液体处理装置通过防静电液体对与基板的电路形成面相反的表面进行防静电处理，从而将电荷 基质。

公开(公告)号：US20100108103A1

公开(公告)日：2010-05-06

申请号：US12610599

申请日：2009-11-02

申请人： Teruomi MINAMI ,  Takashi YABUTA ,  Satoru TANAKA ,  Hirotaka Maruyama ,  Kouichi Eguchi

发明人： Teruomi MINAMI ,  Takashi YABUTA ,  Satoru TANAKA ,  Hirotaka Maruyama ,  Kouichi Eguchi

IPC分类号： B08B3/00

CPC分类号： H01L21/67051

摘要： Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.

摘要翻译： 公开了一种清洁装置和清洁方法，其可以在基板经受清洁处理之后收集化学液体而不降低生产量，并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理，漂洗处理和IPA干燥处理，并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯，在清洗液未供给到晶片的状态下。 此外，该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后，控制单元在进行清洁处理，然后进行晶片W的漂洗处理之后，控制向排水杯供给的清洗液。

公开(公告)号：US20120312332A1

公开(公告)日：2012-12-13

申请号：US13591877

申请日：2012-08-22

申请人： Teruomi MINAMI ,  Norihiro ITO ,  Yuji KAMIKAWA

发明人： Teruomi MINAMI ,  Norihiro ITO ,  Yuji KAMIKAWA

IPC分类号： B08B3/08 ,  B08B3/02

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

摘要： A liquid processing apparatus 1 comprises a casing 5, a substrate holding mechanism 20 that holds a wafer (substrate to be processed) W, a process-liquid supplying mechanism 30 that supplies a process liquid, a draining cup 12 that receives a process liquid, and a draining pipe 13 that discharges a process liquid outside. The process-liquid supplying mechanism 30 includes a first chemical-liquid supply mechanism that supplies a hydrofluoric process liquid, and a drying-liquid supplying mechanism that supplies an organic solvent for drying a wafer W. A control part 50 causes the first chemical-liquid supplying mechanism to supply a hydrofluoric process liquid, and then causes the drying-liquid supplying mechanism to supply an organic solvent. In addition, before the control part 50 causes the drying-liquid supplying mechanism to supply an organic solvent, the control part causes a cleaning mechanism 10 to remove an alkaline component in a casing 5.

摘要翻译： 液体处理装置1包括壳体5，保持晶片（待处理基板）W的基板保持机构20，供给处理液的处理液供给机构30，接收处理液的排出杯12， 以及将处理液体排出到外部的排水管13。 处理液供给机构30包括供给氢氟化处理液的第一药液供给机构和供给干燥晶片W的有机溶剂的干燥液供给机构。控制部50使第一药液 供给机构供给氢氟化处理液，然后使干燥液供给机构供给有机溶剂。 此外，在控制部50使干燥液供给机构供给有机溶剂之前，控制部使清洁机构10除去壳体5内的碱性成分。

公开(公告)号：US20100319734A1

公开(公告)日：2010-12-23

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。