公开(公告)号：US07929342B2

公开(公告)日：2011-04-19

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US08238135B2

公开(公告)日：2012-08-07

申请号：US12529387

申请日：2008-01-15

申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Hideaki Numata

发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Hideaki Numata

IPC分类号： G11C19/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

摘要： A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient α in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient α in the magnetization switching region 13.

摘要翻译： MRAM的磁记录层10具有第一磁化固定区域11，第二磁化固定区域12和磁化切换区域13.磁化切换区域13具有可逆磁化并与被钉扎层重叠。 第一磁化固定区域11连接到磁化切换区域13的第一边界B1，并且其磁化方向固定在第一方向上。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向均朝向磁化开关区域13或远离磁化开关区域13.磁化固定区域11和12的至少一部分R1，R2中的阻尼系数α大于阻尼 磁化转换区域13中的系数α。

公开(公告)号：US20100142264A1

公开(公告)日：2010-06-10

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C7/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US20100096715A1

公开(公告)日：2010-04-22

申请号：US12529387

申请日：2008-01-15

申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Hideaki Numata

发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Hideaki Numata

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

摘要： A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient α in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient α in the magnetization switching region 13.

摘要翻译： MRAM的磁记录层10具有第一磁化固定区域11，第二磁化固定区域12和磁化切换区域13.磁化切换区域13具有可逆磁化并与被钉扎层重叠。 第一磁化固定区域11连接到磁化切换区域13的第一边界B1，并且其磁化方向固定在第一方向上。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向均朝向磁化开关区域13或远离磁化开关区域13.磁化固定区域11和12的至少一部分R1，R2中的阻尼系数α大于阻尼 磁化转换区域13中的系数α。

公开(公告)号：US20090296454A1

公开(公告)日：2009-12-03

申请号：US12443349

申请日：2007-09-25

申请人： Takeshi Honda ,  Noboru Sakimura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Norikazu Ohshima

发明人： Takeshi Honda ,  Noboru Sakimura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Norikazu Ohshima

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C7/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.

摘要翻译： 磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13， 第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接 区域13和磁化取向在第一方向固定。 第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。 第一方向和第二方向彼此相反。

公开(公告)号：US08526222B2

公开(公告)日：2013-09-03

申请号：US13606737

申请日：2012-09-07

申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

IPC分类号： G11C11/15

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

摘要翻译： 根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在磁化自由区​​域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。 这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

公开(公告)号：US20100149862A1

公开(公告)日：2010-06-17

申请号：US12297153

申请日：2007-04-09

申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction.

摘要翻译： 磁性随机存取存储器包括配备有具有可逆磁化的磁化反转区域并通过其使写入电流在面内方向上流动的磁记录层，具有固定磁化强度的磁化固定层，提供非磁性层 在磁化反转区域和磁化固定层之间，以及与磁记录层相对设置并具有接收在磁记录层中产生的热量和散热的功能的吸热结构。 这种磁性随机存取存储器可以通过使用吸热结构辐射在磁记录层中产生的热量，并且防止由写入电流在面内方向上流动引起的温度上升。

公开(公告)号：US08791534B2

公开(公告)日：2014-07-29

申请号：US13806828

申请日：2011-06-16

申请人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Norikazu Ohshima

发明人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Norikazu Ohshima

IPC分类号： H01L43/00

CPC分类号： H01L43/02 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228 ,  H01L43/08

摘要： In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.

摘要翻译： 在其中磁化自由层的两端的磁化被磁化固定层固定的垂直磁化畴壁运动MRAM中，防止了由于来自磁化固定层的泄漏磁场引起的写入电流的增加。 在第一边界线和第一垂直线之间存在第一位移，其中穿过第一磁化固定层的外周线的第一磁化自由层的曲线部分是第一边界线，链段 无磁化区域的中心和第一磁化固定区域的中心是第一段，作为第一段的垂直线并与第一边界线接触的段是第一垂直线 。

公开(公告)号：US08040724B2

公开(公告)日：2011-10-18

申请号：US12671012

申请日：2008-07-07

申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

IPC分类号： G11C11/15

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。

公开(公告)号：US20100193890A1

公开(公告)日：2010-08-05

申请号：US12671012

申请日：2008-07-07

申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。