公开(公告)号：US5138422A

公开(公告)日：1992-08-11

申请号：US790025

申请日：1991-11-06

申请人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Yukio Tsuzuki

发明人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Yukio Tsuzuki

IPC分类号： H01L21/762 ,  H01L21/763 ,  H01L27/088

CPC分类号： H01L21/762 ,  H01L21/76248 ,  H01L21/76264 ,  H01L21/763 ,  H01L21/76272 ,  H01L21/76275 ,  H01L21/76286 ,  H01L27/088

摘要： Disclosed is a semiconductor device which comprises a substrate, an insulating film formed at a predetermined region in the substrate or on the main surface of the substrate, a polycrystalline semiconductor layer formed on at least the insulating film, a single crystal semiconductor layer formed on at least the polycrystalline semiconductor layer, an isolation region formed to extend from the top main surface of the single crystal semiconductor layer to at least the surface of the insulating film, through the polycrystalline semiconductor layer, to electrically isolate a portion formed in the single crystal semiconductor layer surrounded by the isolation region from another portion formed in the single crystal semiconductor layer and not surrounded by the isolation region, at least a semiconductor device formed within the portion surrounded by the isolation region. This semiconductor device has an additional characteristic in that another semiconductor device using another main surface of the substrate as the electrode is provided on the surface of the substrate and the single crystal semiconductor layer, and the plolycrystalline semiconductor layer serves to terminate the electric line of force emitted from the substrate, and therefore, the single crystal semiconductor layer mounted on the polycrystalline semiconductor layer is not affected by the electric line of force. Consequently, a semiconductor device which can operate effectively without being influenced by variations of the electric potential in the substrate can be obtained, and further, an intelligent type power device can be formed in which the power semiconductor device and the semiconductor device controlling the power device are formed in the same substrate but are completely isolated from each other.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板中或基板的主表面上的预定区域处的绝缘膜，形成在至少绝缘膜上的多晶半导体层，形成在基板上的单晶半导体层 至少多晶半导体层，通过多晶半导体层形成为从单晶半导体层的顶部主表面延伸到至少绝缘膜的表面的隔离区，以将形成在单晶半导体中的部分电隔离 所述隔离区域与形成在所述单晶半导体层中的不被所述隔离区域包围的另一部分包围的至少一个半导体器件形成在由所述隔离区域包围的部分内。 该半导体器件具有另外的特征，即在衬底和单晶半导体层的表面上设置另一个使用衬底的另一个主表面作为电极的半导体器件，并且该结晶半导体层用于终止电力线 从衬底发出的，因此，安装在多晶半导体层上的单晶半导体层不受电力线的影响。 因此，可以获得能够有效地工作而不受基板中电位变化的影响的半导体器件，并且还可以形成智能型功率器件，其中功率半导体器件和控制功率器件的半导体器件 形成在相同的基板中，但彼此完全隔离。

公开(公告)号：US4963505A

公开(公告)日：1990-10-16

申请号：US260997

申请日：1988-10-21

申请人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Yukio Tsuzuki

发明人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Yukio Tsuzuki

IPC分类号： H01L21/762 ,  H01L21/763 ,  H01L27/088

CPC分类号： H01L21/76248 ,  H01L21/762 ,  H01L21/76264 ,  H01L21/763 ,  H01L21/76272 ,  H01L21/76275 ,  H01L21/76286 ,  H01L27/088 ,  Y10S148/012 ,  Y10S438/969

摘要： Disclosed is a semiconductor device which comprises a substrate, an insulating film formed at a predetermined region in the substrate or on the main surface of the substrate, a polycrystalline semiconductor layer formed on at least the insulating film, a single crystal semiconductor layer formed on at least the polycrystalline semiconductor layer, an isolation region formed to extend from the top main surface of the single crystal semiconductor layer to at least the surface of the insulating film, through the polycrystalline semiconductor layer, to electrically isolate a portion formed in the single crystal semiconductor layer surrounded by the isolation region from another portion formed in the single crystal semiconductor layer and not surrounded by the isolation region, at least a semiconductor device formed within the portion surrounded by the isolation region. This semiconductor device has an additional characteristics in that another semiconductor device using another main surface of the substrate as the electrode is provided on the surface of the substrate and the single cyrstal semiconductor layer, and the polycrystalline semiconductor layer serves to terminate the electric line of force emitted from the substrate, and therefore, the single crystal semiconductor layer mounted on the polycrystalline semiconductor layer is not affected by the electric line of force. Consequently, a semiconductor device which can operate effectively without being influenced by variations of the electric potential in the substrate can be obtained, and further, an intelligent type power device can be formed in which the power semiconductor device and the semiconductor device controlling the power device are formed in the same substrate but are completely isolated from each other.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板中或基板的主表面上的预定区域处的绝缘膜，形成在至少绝缘膜上的多晶半导体层，形成在基板上的单晶半导体层 至少多晶半导体层，通过多晶半导体层形成为从单晶半导体层的顶部主表面延伸到至少绝缘膜的表面的隔离区，以将形成在单晶半导体中的部分电隔离 所述隔离区域与形成在所述单晶半导体层中的不被所述隔离区域包围的另一部分包围的至少一个半导体器件形成在由所述隔离区域包围的部分内。 该半导体器件具有另外的特征，即在基板的表面和单个硅谷半导体层上设置另一个使用基板的另一个主表面作为电极的半导体器件，并且多晶半导体层用于终止电力线 从衬底发出的，因此，安装在多晶半导体层上的单晶半导体层不受电力线的影响。 因此，可以获得能够有效地工作而不受基板中电位变化的影响的半导体器件，并且还可以形成智能型功率器件，其中功率半导体器件和控制功率器件的半导体器件 形成在相同的基板中，但彼此完全隔离。

公开(公告)号：US5523692A

公开(公告)日：1996-06-04

申请号：US215759

申请日：1994-03-22

申请人： Susumu Kuroyanagi ,  Tetsuo Fujii ,  Kingo Okada ,  Masaei Nozawa ,  Syuji Yamaguchi ,  Kiwamu Naito

发明人： Susumu Kuroyanagi ,  Tetsuo Fujii ,  Kingo Okada ,  Masaei Nozawa ,  Syuji Yamaguchi ,  Kiwamu Naito

IPC分类号： G01N27/416 ,  G01N33/28 ,  G01R27/08

CPC分类号： G01N33/2888 ,  G01N27/4167

摘要： An oil deterioration detector comprising a sensitive electrode whose electric potential varies in response to acidity and/or basicity of oil to be measured, and a reference electrode associated with this sensitive electrode. An electrically conductive housing accommodates the sensitive electrode and the reference electrode together with the oil. A potential difference detector detects oil deterioration by measuring a potential difference between the sensitive electrode and the reference electrode. And, an insulating member is interposed between these electrodes and the electrically conductive housing for electrically insulating these electrodes from the electrically conductive housing. The reference electrode is grounded together with the electrically conductive housing. An insulating, hydrophilic porous member would be interposed between the sensitive electrode and the reference electrode.

摘要翻译： 一种油劣化检测器，包括响应于要测量的油的酸度和/或碱度而电位变化的敏感电极和与该敏感电极相关的参考电极。 导电壳体与油一起容纳敏感电极和参考电极。 电位差检测器通过测量敏感电极和参考电极之间的电位差来检测油劣化。 并且，绝缘构件插入在这些电极和用于将这些电极与导电壳体电绝缘的导电壳体之间。 参考电极与导电壳体一起接地。 绝缘的亲水性多孔构件将介于敏感电极和参考电极之间。

公开(公告)号：US5520051A

公开(公告)日：1996-05-28

申请号：US249082

申请日：1994-05-25

申请人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi

发明人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi

IPC分类号： G01P15/12 ,  G01L9/00 ,  G01L15/00 ,  G01P15/08 ,  H01L29/84

CPC分类号： G01L9/0042 ,  G01L15/00 ,  G01P15/0802 ,  G01P15/123

摘要： Device including a strain generating portion supported at least at one end on a substrate and formed in a displaceable manner with respect to the substrate in a cavity of the substrate. A semiconductor strain sensing element, which is disposed at the strain generating portion, detects the amount of strain of the strain generating portion. A support is disposed at a connection point between the strain generating portion and the substrate so as to reinforce the connection point.

摘要翻译： 该装置包括一个应变产生部分，该部分至少在一个端部支撑在衬底上，并且在衬底的空腔中相对于衬底以可移位的方式形成。 设置在应变发生部的半导体应变感测元件检测应变发生部的应变量。 支撑件设置在应变发生部和基板之间的连接点处，以便加强连接点。

公开(公告)号：USRE34893E

公开(公告)日：1995-04-04

申请号：US35248

申请日：1993-03-22

申请人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

发明人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

IPC分类号： G01L9/00 ,  H01L27/06 ,  H01L27/092 ,  H01L29/84 ,  H01L29/96

CPC分类号： H01L27/067 ,  G01L19/147 ,  G01L9/0042 ,  H01L27/092

摘要： A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

摘要翻译： 本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底， 形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的主表面上的开口和应变 检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。 半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

公开(公告)号：US5095349A

公开(公告)日：1992-03-10

申请号：US363526

申请日：1989-06-07

申请人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

发明人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

IPC分类号： G01L9/00 ,  H01L27/20

CPC分类号： G01L19/147 ,  G01L9/0042 ,  G01L9/0054 ,  H01L27/20

摘要： A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

摘要翻译： 本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底， 形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的主表面上的开口和应变 检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。 半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

公开(公告)号：US5320705A

公开(公告)日：1994-06-14

申请号：US108498

申请日：1993-08-18

申请人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

发明人： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

IPC分类号： G01L9/00 ,  H01L27/20 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： G01L9/0042 ,  G01L19/147 ,  G01L9/0054 ,  H01L27/20 ,  Y10T29/42 ,  Y10T29/49103

摘要： A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which; at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the mail surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

摘要翻译： 本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底， ; 形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的邮件表面上的开口和应变 检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。 半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

公开(公告)号：US5313836A

公开(公告)日：1994-05-24

申请号：US996474

申请日：1992-12-23

申请人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Yoshitaka Gotoh

发明人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Yoshitaka Gotoh

IPC分类号： G01P15/12 ,  G01P15/02 ,  G01P15/08 ,  H01L29/84

CPC分类号： G01P15/02 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

摘要： A semiconductor sensor for an accelerometer including a beam portion, consisting of a thin beam portion and a thick beam portion and supported by a solid member through the end of the thin beam portion, and a stopper portion provided at a position on an imaginary line along which a center of gravity of the thick beam portion moves. These components are integrally formed in a silicon substrate. Excessive displacement of the beam portion when excessive acceleration is applied is effectively suppressed by the stopper portion, and breakage of the thin beam portion due to excessive acceleration can be avoided.

摘要翻译： 一种用于加速度计的半导体传感器，其包括梁部分，该梁部分由薄梁部分和厚梁部分组成，并且通过薄梁部分的端部由实心部件支撑，以及设置在假想线上的位置处的止动部分 其中厚梁部分的重心移动。 这些部件一体地形成在硅衬底中。 当施加过大的加速度时，梁部分的过大位移被止动部分有效地抑制，并且可以避免由于过度的加速度引起的薄梁部分的断裂。

公开(公告)号：US4975390A

公开(公告)日：1990-12-04

申请号：US132573

申请日：1987-12-08

申请人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Akira Kuroyanagi ,  Tomohiro Funahashi ,  Minekazu Sakai ,  Shinji Yoshihara

发明人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Akira Kuroyanagi ,  Tomohiro Funahashi ,  Minekazu Sakai ,  Shinji Yoshihara

IPC分类号： G01L9/00

CPC分类号： G01L9/0042 ,  G01L9/0055 ,  Y10S148/012 ,  Y10S148/135

摘要： Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.

摘要翻译： 这里公开的是半导体压力传感器和制造方法。 传感器包括在其主表面上具有凹部的板。 隔膜具有与板的第一主表面接合的下表面，并且形成为具有在其中没有孔的上表面。 压阻层形成为与隔膜接触并定位成至少部分地位于凹部上方。 压阻层的电阻提供了施加到隔膜的压力的指示。 制造方法包括在隔膜中形成单晶基板的压阻层，而不会再结晶。

公开(公告)号：US09341513B2

公开(公告)日：2016-05-17

申请号：US13570233

申请日：2012-08-08

申请人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

发明人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

IPC分类号： H01L31/0232 ,  G01J1/42 ,  G01J1/04 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

CPC分类号： G01J1/4204 ,  G01J1/0488 ,  G01J1/429 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

摘要： To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

摘要翻译： 为了提供可以防止多个电流路径的产生的光检测元件和光电检测器件，并且不管光吸收层的表面状态不稳定，都可以以稳定性和高灵敏度进行检测。 光检测元件包括光学透明基板，光吸收层，电极，电极，粘合剂层，绝缘膜和封装。 光学吸收层形成在光学透明基板上，并且每个电极的一部分嵌入在光吸收层中。 光电检测单元与封装上的粘合剂层接合结合。 光吸收层选择性地吸收特定波长的光以转换成电信号。 从光学透明基板的背面侧照射被测光。