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    Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device
    1.
    发明授权
    Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device 有权
    具有光吸收层的光检测元件，具有光吸收层的光电检测元件和自动照明器件

    公开(公告)号：US09341513B2

    公开(公告)日：2016-05-17

    申请号：US13570233

    申请日：2012-08-08

    申请人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

    发明人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

    IPC分类号： H01L31/0232 ,  G01J1/42 ,  G01J1/04 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

    CPC分类号： G01J1/4204 ,  G01J1/0488 ,  G01J1/429 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

    摘要： To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

    摘要翻译： 为了提供可以防止多个电流路径的产生的光检测元件和光电检测器件，并且不管光吸收层的表面状态不稳定，都可以以稳定性和高灵敏度进行检测。 光检测元件包括光学透明基板，光吸收层，电极，电极，粘合剂层，绝缘膜和封装。 光学吸收层形成在光学透明基板上，并且每个电极的一部分嵌入在光吸收层中。 光电检测单元与封装上的粘合剂层接合结合。 光吸收层选择性地吸收特定波长的光以转换成电信号。 从光学透明基板的背面侧照射被测光。

    Photodetection device
    2.
    发明授权
    Photodetection device 失效
    光检测装置

    公开(公告)号：US08610133B2

    公开(公告)日：2013-12-17

    申请号：US13274289

    申请日：2011-10-14

    申请人： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

    发明人： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

    IPC分类号： H01L21/02

    CPC分类号： G02B5/208 ,  G01J1/1626 ,  G01J1/429 ,  G02B5/285

    摘要： Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

    摘要翻译： 在支撑基板上形成两个光接收元件。 第一光接收元件由p型层，n型层，光吸收半导体层，阳极电极，阴极电极，保护膜等形成。第二光接收元件由p 型层，n型层，透射膜，阳极电极，阴极电极，保护膜等。光吸收半导体层吸收波长λ范围内的光，并且设置得比光接收表面更靠近光接收表面 pn结区域。 透射膜没有光吸收范围，并且比pn结区域更靠近光接收表面。 通过使用来自第一光接收元件的检测信号和来自第二光接收元件的检测信号的计算来测量波长范围λ的光量。

    MULTILAYER SUBSTRATE
    4.
    发明申请
    MULTILAYER SUBSTRATE 审中-公开
    多层基板

    公开(公告)号：US20080187776A1

    公开(公告)日：2008-08-07

    申请号：US12026863

    申请日：2008-02-06

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Yoshio Nishimoto ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Yoshio Nishimoto ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： B32B15/00

    CPC分类号： C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  Y10T428/12778

    摘要： Provided is a multilayer substrate having the configuration in which a multilayer film is formed on a principal surface opposite to a principal surface in the oxide-thin-film lamination direction in a translucent substrate. The multilayer film is formed by sequentially laminating a dielectric film, Au (gold) film, and oxide film in this order from the translucent substrate. On the principal surface opposite to the principal surface on which the oxide thin film is disposed, the multilayer film containing the Au film is formed, the Au film can reflect and block the excessive infrared light from a substrate holder or a heat source at the time of growth. As a result, temperature can be accurately measured.

    摘要翻译： 提供一种多层基板，其具有在透光性基板中在与氧化物薄膜层叠方向的主面相反的主面上形成多层膜的结构。 通过从透光性基板依次层叠电介质膜Au（金）膜和氧化膜而形成多层膜。 在与设置有氧化物薄膜的主表面相对的主表面上形成含有Au膜的多层膜，Au膜可以反映并阻挡来自衬底保持器或热源的过多红外光 的增长。 结果，可以精确地测量温度。

    ZnO-BASED THIN FILM
    5.
    发明申请
    ZnO-BASED THIN FILM 审中-公开
    基于ZnO的薄膜

    公开(公告)号：US20100323160A1

    公开(公告)日：2010-12-23

    申请号：US12526113

    申请日：2008-02-06

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： B32B33/00 ,  C30B29/16 ,  B32B9/00

    CPC分类号： H01L21/02554 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612

    摘要： Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. 1(a), a ZnO-based film 2 is formed on a ZnO-based substrate 1. Meanwhile, in FIG. 1(b), a ZnO-based laminated body 10 that is a laminated body of ZnO-based thin films is formed on the ZnO-based substrate 1. The ZnO-based laminated body 10 is the laminated body in which multiple ZnO-based thin films including a ZnO-based thin film 3, a ZnO-based thin film 4 and the like are laminated. When forming the ZnO-based thin film 2 or the ZnO-based laminated body 10, the film or the body is formed at a growth temperature of 750° C. or above, or alternatively, a step structure on a surface of the film is formed into a predetermined structure such that roughness on the surface of the film is in a predetermined range.

    摘要翻译： 提供了当在基板上形成ZnO基薄膜时用于生长平坦膜的ZnO基薄膜。 在图 如图1（a）所示，在ZnO系基板1上形成ZnO系膜2。 如图1（b）所示，在ZnO系基板1上形成作为ZnO系薄膜的层叠体的ZnO系叠层体10. ZnO系叠层体10为多层ZnO系 层叠包含ZnO系薄膜3，ZnO系薄膜4等的薄膜。 当形成ZnO基薄膜2或ZnO基层叠体10时，在750℃以上的生长温度下形成薄膜或者本体，或者也可以在薄膜的表面上形成台阶结构 形成为预定结构，使得薄膜表面上的粗糙度处于预定范围内。

    ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE
    6.
    发明申请
    ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE 审中-公开
    基于ZnO的衬底，用于处理基于ZnO的衬底的方法和基于ZnO的半导体器件

    公开(公告)号：US20100308327A1

    公开(公告)日：2010-12-09

    申请号：US12865550

    申请日：2009-01-30

    申请人： Ken Nakahara ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： H01L29/22 ,  H01L21/36

    CPC分类号： C30B29/16 ,  C30B33/12

    摘要： Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate.

    摘要翻译： 提供具有适合于晶体生长的高质量表面的ZnO基衬底，用于处理ZnO基衬底的方法和ZnO类半导体器件。 形成ZnO基基板，使得在晶体生长侧的主表面上基本上不存在羧基和碳酸酯基中的任何一个。 此外，为了基本上不存在羧基或碳酸酯基，在晶体生长开始之前，使氧自由基，氧等离子体和臭氧中的任一种与ZnO基基板的表面接触。 因此，提高了ZnO基板表面的清洁度，从而能够在基板上制造高质量的ZnO基薄膜。