公开(公告)号：US20120091435A1

公开(公告)日：2012-04-19

申请号：US13319910

申请日：2010-05-10

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/207 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same.The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

摘要翻译： 提供了一种用于电子器件的外延衬底，其可以提高垂直击穿电压并提供其制造方法。 外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲层，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主层压体。 此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。 初始生长层由Ba1Alb1Gac1Ind1N材料制成。 此外，超晶格层叠体通过交替堆叠由Ba2Alb2Gac2Ind2N材料制成的第一层和由与第一层具有不同带隙的Ba3Alb3Gac3Ind3N材料制成的第二层而构成。

公开(公告)号：US08426893B2

公开(公告)日：2013-04-23

申请号：US13319910

申请日：2010-05-10

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

IPC分类号： H01L31/00

CPC分类号： H01L29/207 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

摘要翻译： 提供了一种用于电子器件的外延衬底，其可以提高垂直击穿电压并提供其制造方法。 外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲器，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主叠层。 此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。 初始生长层由Ba1Alb1Gac1Ind1N材料制成。 此外，超晶格层叠体通过交替堆叠由Ba2Alb2Gac2Ind2N材料制成的第一层和由与第一层具有不同带隙的Ba3Alb3Gac3Ind3N材料制成的第二层而构成。

公开(公告)号：US08946863B2

公开(公告)日：2015-02-03

申请号：US13388804

申请日：2010-08-02

申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L21/18 ,  H01L29/812 ,  H01L21/02

CPC分类号： H01L29/7786 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/812

摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.

摘要翻译： 电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。 通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。 低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

公开(公告)号：US20120168719A1

公开(公告)日：2012-07-05

申请号：US13384006

申请日：2010-07-13

申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

IPC分类号： H01L29/06 ,  H01L21/66

CPC分类号： H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02658 ,  H01L22/14 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/66462

摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

摘要翻译： 为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括 在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底 通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

公开(公告)号：US08710489B2

公开(公告)日：2014-04-29

申请号：US13384006

申请日：2010-07-13

申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02658 ,  H01L22/14 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/66462

摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

摘要翻译： 为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括 在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底 通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

公开(公告)号：US20120153440A1

公开(公告)日：2012-06-21

申请号：US13388804

申请日：2010-08-02

申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

IPC分类号： H01L29/38 ,  C30B25/18

CPC分类号： H01L29/7786 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/812

摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.

摘要翻译： 电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。 通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。 低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

公开(公告)号：US10388517B2

公开(公告)日：2019-08-20

申请号：US13550115

申请日：2012-07-16

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/737 ,  H01L29/20

摘要： An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm.

公开(公告)号：US20120223328A1

公开(公告)日：2012-09-06

申请号：US13502847

申请日：2010-11-04

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/205

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/205

摘要： A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.

摘要翻译： 一种III族氮化物外延层叠基板，其依次包括基板，缓冲层和主层压板，其中缓冲层依次包括初始生长层，第一超晶格层压板和第二超晶格层压板，第一超晶格层压板包括五个至 20组第一AlN层和第二GaN层，第一AlN层和第二GaN层交替层叠，并且每组第一AlN层和第二GaN层的厚度小于44nm，第二超晶格 层叠体包括由AlN材料或AlGaN材料制成的多组第一层和由与第一层具有不同带隙的AlGaN材料制成的第二层，第一层和第二层交替堆叠。

公开(公告)号：US20110240962A1

公开(公告)日：2011-10-06

申请号：US13139428

申请日：2009-12-14

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/66462 ,  H01L29/7787

摘要： An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.

摘要翻译： 一种用于具有Si单晶衬底的电子器件的外延衬底，在Si单晶衬底上形成的绝缘层的缓冲层，以及由在缓冲器上外延生长的多个III族氮化物层形成的主叠层体，其中， 的外延衬底被定义为电流传导方向。 所述缓冲器至少包括与所述Si单晶衬底接触的初始生长层和在初始生长层上由超晶格多层结构构成的超晶格层叠体。

公开(公告)号：US08847203B2

公开(公告)日：2014-09-30

申请号：US13502847

申请日：2010-11-04

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/06 ,  H01L29/15 ,  H01L29/205 ,  H01L21/02 ,  H01L29/20

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/205

摘要： A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.

摘要翻译： 一种III族氮化物外延层叠基板，其依次包括基板，缓冲层和主层压板，其中缓冲层依次包括初始生长层，第一超晶格层压板和第二超晶格层压板，第一超晶格层压板包括五个至 20组第一AlN层和第二GaN层，第一AlN层和第二GaN层交替层叠，并且每组第一AlN层和第二GaN层的厚度小于44nm，第二超晶格 层叠体包括由AlN材料或AlGaN材料制成的多组第一层和由与第一层具有不同带隙的AlGaN材料制成的第二层，第一层和第二层交替堆叠。