公开(公告)号：US08710489B2

公开(公告)日：2014-04-29

申请号：US13384006

申请日：2010-07-13

申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02658 ,  H01L22/14 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/66462

摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

摘要翻译： 为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括 在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底 通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

公开(公告)号：US08410472B2

公开(公告)日：2013-04-02

申请号：US13139428

申请日：2009-12-14

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/06

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/66462 ,  H01L29/7787

摘要： An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.

摘要翻译： 一种用于具有Si单晶衬底的电子器件的外延衬底，在Si单晶衬底上形成的绝缘层的缓冲层，以及由在缓冲器上外延生长的多个III族氮化物层形成的主叠层体，其中， 的外延衬底被定义为电流传导方向。 所述缓冲器至少包括与所述Si单晶衬底接触的初始生长层和在初始生长层上由超晶格多层结构构成的超晶格层叠体。

公开(公告)号：US08253326B2

公开(公告)日：2012-08-28

申请号：US12805231

申请日：2010-07-20

申请人： Tsukasa Maruyama ,  Tetsuya Ikuta

发明人： Tsukasa Maruyama ,  Tetsuya Ikuta

IPC分类号： H01J1/62

CPC分类号： H01J9/221 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light-emitting device of the present invention includes: a light-emitting element; and a phosphor layer containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light. The phosphor layer has a structure in which the phosphors are disposed on an applied adhesive with a thickness equal to or less than an average particle size of the phosphors. A thickness of the phosphor layer is equal to or less than five times the average particle size of the phosphors, and an occupancy ratio of the phosphors in the phosphor layer is 50% or more. Further, the phosphors disposed on the adhesive has an adjusted particle size.

公开(公告)号：US07812516B2

公开(公告)日：2010-10-12

申请号：US11987176

申请日：2007-11-28

申请人： Tsukasa Maruyama ,  Tetsuya Ikuta

发明人： Tsukasa Maruyama ,  Tetsuya Ikuta

IPC分类号： H05B33/00

CPC分类号： H01J1/63 ,  H01L33/44 ,  H01L33/501 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light-emitting device includes: a light-emitting element whose main emission wavelength is 410 nm or less; and one phosphor layer or more stacked to cover a light-emitting surface of the light-emitting element and containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light.

摘要翻译： 发光装置包括：主发射波长为410nm以下的发光元件; 并且一层荧光体层或多层叠以覆盖发光元件的发光表面并且包含吸收来自发光元件的光的荧光体，并且对吸收的光进行波长转换以发光。

公开(公告)号：US07531389B2

公开(公告)日：2009-05-12

申请号：US12031785

申请日：2008-02-15

申请人： Tetsuya Ikuta

发明人： Tetsuya Ikuta

IPC分类号： H01L21/00

CPC分类号： H01L29/749 ,  H01L29/66363

摘要： Disclosed herein is a method of manufacturing a semiconductor device having a thyristor formed by joining a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer in order, the method including the steps of: forming the second p-type semiconductor layer including a p-type impurity in a surface layer of a semiconductor substrate; forming the first n-type semiconductor layer including an n-type impurity on the semiconductor substrate including the second p-type semiconductor layer by epitaxial growth; forming a non-doped semiconductor layer on the first n-type semiconductor layer by epitaxial growth; and forming the first p-type semiconductor layer including a p-type impurity on the non-doped semiconductor layer by epitaxial growth.

摘要翻译： 本文公开了一种制造半导体器件的方法，该半导体器件具有通过按顺序接合第一p型半导体层，第一n型半导体层，第二p型半导体层和第二n型半导体层而形成的晶闸管 该方法包括以下步骤：在半导体衬底的表面层中形成包括p型杂质的第二p型半导体层; 通过外延生长在包括第二p型半导体层的半导体衬底上形成包括n型杂质的第一n型半导体层; 通过外延生长在所述第一n型半导体层上形成非掺杂半导体层; 以及通过外延生长在所述非掺杂半导体层上形成包括p型杂质的第一p型半导体层。

公开(公告)号：US20080150416A1

公开(公告)日：2008-06-26

申请号：US11987177

申请日：2007-11-28

申请人： Tsukasa Maruyama ,  Tetsuya Ikuta

发明人： Tsukasa Maruyama ,  Tetsuya Ikuta

IPC分类号： H01J1/62 ,  H01J9/02

CPC分类号： H01J9/221 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light-emitting device of the present invention includes: a light-emitting element; and a phosphor layer containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light. The phosphor layer has a structure in which the phosphors are disposed on an applied adhesive with a thickness equal to or less than an average particle size of the phosphors. A thickness of the phosphor layer is equal to or less than five times the average particle size of the phosphors, and an occupancy ratio of the phosphors in the phosphor layer is 50% or more. Further, the phosphors disposed on the adhesive has an adjusted particle size.

摘要翻译： 本发明的发光装置包括：发光元件; 以及荧光体层，其含有从发光元件吸收光的荧光体，并对所吸收的光进行波长转换以发光。 荧光体层具有这样的结构，其中荧光体被设置在等于或小于荧光体的平均粒度的厚度的施加的粘合剂上。 荧光体层的厚度为荧光体的平均粒径的5倍以下，荧光体层的荧光体的占有率为50％以上。 此外，设置在粘合剂上的荧光体具有调节的粒度。

公开(公告)号：US20070228949A1

公开(公告)日：2007-10-04

申请号：US11691509

申请日：2007-03-27

申请人： Tsukasa Maruyama ,  Masahiro Gotoh ,  Tetsuya Ikuta

发明人： Tsukasa Maruyama ,  Masahiro Gotoh ,  Tetsuya Ikuta

IPC分类号： H05B33/04 ,  H05B33/10 ,  B05D5/12

CPC分类号： H05B33/20 ,  C09K11/0883 ,  C09K11/7721 ,  C09K11/7734 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/14 ,  H01L2924/00014

摘要： A light emitting device 10 includes: a lead frame 12a serving as a mounting portion having a cup 13; a light emitting element 14, mounted on the bottom face 13a of the cup, for emitting light having a predetermined peak wavelength; a layer of large phosphor particles 16, absorbed and formed on the light emitting element, for absorbing light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the light emitted from the light emitting element; small phosphor particles 18, which have a smaller particle diameter than that of the large phosphor particles, for absorbing at least one of light emitted from the large phosphor particles and light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the at least one of the light emitted from the large phosphor particles and the light emitted from the light emitting element; and a sealing member 20, in which the small phosphor particles are dispersed, for sealing the light emitting element and the layer of large phosphor particles in the cup.

摘要翻译： 发光装置10包括：作为具有杯13的安装部的引线框架12a; 安装在杯的底面13a上的发光元件14，用于发射具有预定峰值波长的光; 吸收并形成在发光元件上的用于吸收从发光元件发出的光并发出具有比从发光元件发射的光的峰值波长更长的光的大荧光体颗粒16的层; 小荧光体颗粒18具有比大荧光体颗粒小的粒径，用于吸收从大荧光体颗粒发射的光和从发光元件发射的光中的至少一种，并且用于发射具有比磷光体颗粒更长的峰值波长的光 从大荧光体颗粒发射的光中的至少一种光和从发光元件发射的光中的至少一种; 以及其中分散有小荧光体颗粒的密封构件20，以密封杯中的发光元件和大的荧光体颗粒层。

公开(公告)号：US20060065878A1

公开(公告)日：2006-03-30

申请号：US11211751

申请日：2005-08-26

申请人： Kenji Sakane ,  Akira Nagatomi ,  Masahiro Gotoh ,  Shuji Yamashita ,  Tetsuya Ikuta

发明人： Kenji Sakane ,  Akira Nagatomi ,  Masahiro Gotoh ,  Shuji Yamashita ,  Tetsuya Ikuta

IPC分类号： C09K11/08 ,  C09K11/54 ,  C09K11/66

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  Y10T428/2991 ,  Y10T428/2993

摘要： To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

公开(公告)号：US5244501A

公开(公告)日：1993-09-14

申请号：US733373

申请日：1991-07-22

申请人： Izumi Nakayama ,  Akitoshi Suzuki ,  Hiroyuki Nawa ,  Motohiro Kaneko ,  Yoshiro Kusumoto ,  Kazuo Takakuwa ,  Tetsuya Ikuta

发明人： Izumi Nakayama ,  Akitoshi Suzuki ,  Hiroyuki Nawa ,  Motohiro Kaneko ,  Yoshiro Kusumoto ,  Kazuo Takakuwa ,  Tetsuya Ikuta

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/768

CPC分类号： C23C16/45519 ,  C23C16/455 ,  C23C16/481 ,  H01L21/76879

摘要： An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.

摘要翻译： 一种用于化学气相沉积的装置，其中至少一个在其表面上具有部分绝缘膜的基板设置在减压反应室中，反应室设置有用于将反应性气体进料到反应室中的喷嘴， 并且提供用于发射光束以加热衬底的光源。 使用红外线的基板加热源和反应气体的层流喷射的组合用于保持选择性，促进薄膜形成反应，提高高再现性和可控性。

公开(公告)号：US10388517B2

公开(公告)日：2019-08-20

申请号：US13550115

申请日：2012-07-16

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/737 ,  H01L29/20

摘要： An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm.