公开(公告)号：US20050034675A1

公开(公告)日：2005-02-17

申请号：US10944812

申请日：2004-09-21

申请人： Tetsuya Nakabayashi ,  Hitoshi Ujimasa ,  Kazuyuki Zaitsu ,  Masafumi Kokura

发明人： Tetsuya Nakabayashi ,  Hitoshi Ujimasa ,  Kazuyuki Zaitsu ,  Masafumi Kokura

IPC分类号： G02F1/13 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  H01L21/203 ,  C23C16/00

CPC分类号： C23C14/564 ,  C23C14/50

摘要： A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.

摘要翻译： 提供了一种在薄膜沉积设备的真空室中作为液晶基底的基底设置的基座。 基座包括基座主体和设置在基座主体上以从底部支撑基板的台阶部分。 台阶形状的尺寸比基板小。 通过设置阶梯部，可以避免在基板的端面形成的膜与在基板周围的部分形成的膜之间的导通。

公开(公告)号：US06808645B2

公开(公告)日：2004-10-26

申请号：US09813152

申请日：2001-03-21

申请人： Tetsuya Nakabayashi ,  Hitoshi Ujimasa ,  Kazuyuki Zaitsu ,  Masafumi Kokura

发明人： Tetsuya Nakabayashi ,  Hitoshi Ujimasa ,  Kazuyuki Zaitsu ,  Masafumi Kokura

IPC分类号： B44C122

CPC分类号： C23C14/564 ,  C23C14/50

摘要： A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.

摘要翻译： 提供了一种在薄膜沉积设备的真空室中作为液晶基底的基底设置的基座。 基座包括基座主体和设置在基座主体上以从底部支撑基板的台阶部分。 台阶形状的尺寸比基板小。 通过设置阶梯部，可以避免在基板的端面形成的膜与在基板周围的部分形成的膜之间的导通。

公开(公告)号：US5162901A

公开(公告)日：1992-11-10

申请号：US527191

申请日：1990-05-23

申请人： Yasunori Shimada ,  Hirohisa Tanaka ,  Hisashi Saito ,  Hitoshi Ujimasa

发明人： Yasunori Shimada ,  Hirohisa Tanaka ,  Hisashi Saito ,  Hitoshi Ujimasa

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1214 ,  G02F1/136213 ,  G02F2001/13629

摘要： An active-matrix display device having low-resistance added capacitance electrode wires in which single or plural secondary wires connected electrically to the added capacitance electrode wires reduce the apparent electrical resistance of the added capacitance electrode wires, which makes the time constant of the added capacitance electrode wires smaller, so that the charging characteristics of the added capacitance are improved and contrast and other display characteristics of the liquid crystal display device are improved.

公开(公告)号：US6133157A

公开(公告)日：2000-10-17

申请号：US119993

申请日：1998-07-21

申请人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

发明人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

IPC分类号： G02F1/13 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.

摘要翻译： 在根据本发明的用于选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层 包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯化物气体的气体。

公开(公告)号：US5783494A

公开(公告)日：1998-07-21

申请号：US524886

申请日：1995-09-07

申请人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

发明人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

IPC分类号： G02F1/13 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

摘要翻译： 在根据本发明的用于选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层 包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯气的气体。