公开(公告)号：US09343324B2

公开(公告)日：2016-05-17

申请号：US14131011

申请日：2012-07-05

申请人： Tetsuya Shinjo ,  Yasunobu Someya ,  Keisuke Hashimoto ,  Ryo Karasawa

发明人： Tetsuya Shinjo ,  Yasunobu Someya ,  Keisuke Hashimoto ,  Ryo Karasawa

IPC分类号： G03F7/004 ,  H01L21/308 ,  G03F7/40 ,  G03F7/32 ,  G03F7/38 ,  C08F26/12 ,  C08F226/06 ,  H01L21/306 ,  G03F7/11 ,  C08G61/12 ,  G03F7/09 ,  H01L21/027

CPC分类号： H01L21/3081 ,  C08F26/12 ,  C08F226/06 ,  C08G61/124 ,  C08G2261/3241 ,  C08G2261/3325 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/30604

摘要： There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene.

摘要翻译： 提供了在光刻工艺中使用的抗蚀剂下层膜，其具有高n值和低k值，并且可以有效地减少在其中抗蚀剂底层的三层工艺中具有193nm波长的光的反射 膜与含硅中间层组合使用。 在光刻工艺中使用的抗蚀剂下层膜形成组合物，包括：包含通过稠合杂环化合物与双环化合物反应得到的产物的单元结构的聚合物。 稠合杂环化合物是咔唑化合物或取代的咔唑化合物。 双环环化合物是二环戊二烯，取代的二环戊二烯，四环[4.4.0.12,5.17,10]十二碳-3,8-二烯或取代的四环[4.4.0.12,5.17,10]十二碳-3,8-二烯。

公开(公告)号：US20140106570A1

公开(公告)日：2014-04-17

申请号：US14116157

申请日：2012-05-18

申请人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

发明人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  G03F7/091 ,  G03F7/094

摘要： Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.

摘要翻译： 通常，在去除时使用灰化，本发明提供了一种用于形成可由碱性水溶液除去的有机硬掩模的材料，因此可以预期在此时减少对基材的损伤 的删除。 一种形成有机硬掩模层的组合物，包括：包含式（1）的结构单元和式（2）的结构单元的聚合物（A） 包含至少两个封端异氰酸酯基团，羟甲基或C 1-5烷氧基甲基的交联性化合物（B） 和溶剂（C），其中在使用多层膜的光刻工艺中，在最下层使用由用于形成有机硬掩模层的组合物获得的有机硬掩模层，其中R1至R4具有与 在规范中。

公开(公告)号：US09514949B2

公开(公告)日：2016-12-06

申请号：US14116157

申请日：2012-05-18

申请人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

发明人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

IPC分类号： G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/308

CPC分类号： H01L21/3081 ,  G03F7/091 ,  G03F7/094

摘要： Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.

公开(公告)号：US20130280913A1

公开(公告)日：2013-10-24

申请号：US13992864

申请日：2011-12-05

申请人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

发明人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

IPC分类号： H01L21/308 ,  H01L21/027 ,  C09D139/04

CPC分类号： H01L21/3081 ,  C09D139/04 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0271

摘要： There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

摘要翻译： 提供了一种用于形成半导体器件制造中用于光刻工艺的具有耐热性的抗蚀剂下层膜的组合物。 一种形成抗蚀剂下层膜的组合物，其含有以式（1）的单元结构的聚合物和式（2）的单元结构，其比例为3至97:97至3的摩尔比。 半导体器件，包括以下步骤：使用在半导体衬底上形成抗蚀剂下层膜的组合物形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 形成图案化的抗蚀剂膜并显影; 根据图案化的抗蚀剂膜蚀刻硬掩模; 根据图案化的硬掩模蚀刻下层膜; 以及根据图案化的下层膜处理半导体衬底。

公开(公告)号：US09263285B2

公开(公告)日：2016-02-16

申请号：US13992864

申请日：2011-12-05

申请人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

发明人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

IPC分类号： H01L21/302 ,  H01L21/308 ,  C09D139/04 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004

CPC分类号： H01L21/3081 ,  C09D139/04 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0271

摘要： There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

摘要翻译： 提供了一种用于形成半导体器件制造中用于光刻工艺的具有耐热性的抗蚀剂下层膜的组合物。 一种形成抗蚀剂下层膜的组合物，其含有以式（1）的单元结构的聚合物和式（2）的单元结构，其比例为3至97:97至3的摩尔比。 半导体器件，包括以下步骤：使用在半导体衬底上形成抗蚀剂下层膜的组合物形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 形成图案化的抗蚀剂膜并显影; 根据图案化的抗蚀剂膜蚀刻硬掩模; 根据图案化的硬掩模蚀刻下层膜; 以及根据图案化的下层膜处理半导体衬底。

公开(公告)号：US20140235060A1

公开(公告)日：2014-08-21

申请号：US14131011

申请日：2012-07-05

申请人： Tetsuya Shinjo ,  Yasunobu Someya ,  Keisuke Hashimoto ,  Ryo Karasawa

发明人： Tetsuya Shinjo ,  Yasunobu Someya ,  Keisuke Hashimoto ,  Ryo Karasawa

IPC分类号： H01L21/308 ,  H01L21/027

CPC分类号： H01L21/3081 ,  C08F26/12 ,  C08F226/06 ,  C08G61/124 ,  C08G2261/3241 ,  C08G2261/3325 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/30604

摘要： There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene.

摘要翻译： 提供了在光刻工艺中使用的抗蚀剂下层膜，其具有高n值和低k值，并且可以有效地减少在其中抗蚀剂底层的三层工艺中具有193nm波长的光的反射 膜与含硅中间层组合使用。 在光刻工艺中使用的抗蚀剂下层膜形成组合物，包括：包含通过稠合杂环化合物与双环化合物反应获得的产物的单元结构的聚合物。 稠合杂环化合物是咔唑化合物或取代的咔唑化合物。 双环环化合物是二环戊二烯，取代的二环戊二烯，四环[4.4.0.12,5.17,10]十二碳-3,8-二烯或取代的四环[4.4.0.12,5.17,10]十二碳-3,8-二烯。

公开(公告)号：US20130189533A1

公开(公告)日：2013-07-25

申请号：US13825925

申请日：2011-10-07

申请人： Hiroaki Okuyama ,  Yasunobu Someya ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto

发明人： Hiroaki Okuyama ,  Yasunobu Someya ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto

IPC分类号： G03F7/09 ,  H01L21/308

CPC分类号： G03F7/11 ,  C08G65/4006 ,  C08G65/4012 ,  C08G2650/40 ,  C08L71/00 ,  C09D171/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/2059 ,  G03F7/32 ,  H01L21/308 ,  H01L21/3086 ,  Y10T428/31942

摘要： There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): O—Ar1  Formula (1) (in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): O—Ar2—O—Ar3-T-Ar4  Formula (2) (in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

摘要翻译： 提供了形成具有耐热性和硬掩模特性的抗蚀剂下层膜的抗蚀剂下层膜形成用组合物。 一种用于光刻的抗蚀剂下层膜形成组合物，其包含：含有式（1）的单元结构的聚合物：（1）（式（1）中，Ar 1为C 6-50亚芳基或有机 （2）的单元结构：式（2）中的：单价结构：式（2）中，Ar 2，Ar 3和Ar 4分别为C 6〜 -50亚芳基或含有杂环基的有机基团，T为羰基或磺酰基），或式（1）的单元结构与式（2）的单元结构的组合。 含有亚芳基的Ar 1和Ar 2的有机基团可以是含有芴结构的有机基团。

公开(公告)号：US20070292767A1

公开(公告)日：2007-12-20

申请号：US11666342

申请日：2005-10-25

申请人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto

发明人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto

IPC分类号： G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  Y10S430/111 ,  Y10S430/115

摘要： There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.

摘要翻译： 提供了一种用于光刻的底层涂层形成组合物，用于形成与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，不会与光致抗蚀剂混合，并且在光刻工艺中使用的半导体衬底上的填充孔性质优异 的半导体器件的制造。 该组合物包含环糊精中羟基总数的10〜90％转化为醚或酯基的环糊精化合物，交联化合物，交联催化剂和溶剂。

公开(公告)号：US07687223B2

公开(公告)日：2010-03-30

申请号：US11666342

申请日：2005-10-25

申请人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto

发明人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto

IPC分类号： G03C1/825 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  Y10S430/111 ,  Y10S430/115

摘要： There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.

摘要翻译： 提供了一种用于光刻的底层涂层形成组合物，用于形成与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，不会与光致抗蚀剂混合，并且在光刻工艺中使用的半导体衬底上的填充孔性质优异 的半导体器件的制造。 该组合物包含环糊精中羟基总数的10〜90％转化为醚或酯基的环糊精化合物，交联化合物，交联催化剂和溶剂。

公开(公告)号：US10509320B2

公开(公告)日：2019-12-17

申请号：US11795520

申请日：2006-01-06

申请人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Yasushi Sakaida

发明人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Yasushi Sakaida

IPC分类号： G03F7/09 ,  G03F7/26 ,  G03F7/30

摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.