公开(公告)号：US4782057A

公开(公告)日：1988-11-01

申请号：US848371

申请日：1986-03-25

申请人： Tetsuya Tahara ,  Minoru Kawakami ,  Shuzo Takehara ,  Masamitsu Sakamori

发明人： Tetsuya Tahara ,  Minoru Kawakami ,  Shuzo Takehara ,  Masamitsu Sakamori

IPC分类号： C07D237/26 ,  A61K31/50 ,  A61K31/502 ,  A61P7/02 ,  A61P7/10 ,  A61P25/20 ,  A61P39/02 ,  C07D237/36 ,  C07D401/04

CPC分类号： C07D401/04 ,  C07D237/36

摘要： A benzo[h]cinnoline compound of the formula: ##STR1## wherein each of X and Y is hydrogen, halogen, trifluoromethyl, hydroxy, alkyl having 1 to 4 carbon atoms, alkoxy having 1 to 4 carbon atoms, amino, alkanoylamido having 2 to 4 carbon atoms, nitro, cyano, alkanoyl having 2 to 4 carbon atoms; Ar is phenyl or pyridyl which may be optionally substituted by at least one substituent selected from the group consisting of halogen, trifluoromethyl, hydroxy, alkyl having 1 to 4 carbon atoms, alkoxy having 1 to 4 carbon atoms, amino, alkanoylamido having 2 to 4 carbon atoms, nitro and cyano; and the bond position indicated by dotted line is single bond or double bond, a method of preparing said compound and a pharmaceutical composition containing said compound.Since these compounds possess high affinity for benzodiazepine receptor and antianxiety activity, they are useful as neutralizers to an excess dose of antianxiety agents or as antianxiety agents.

摘要翻译： PCT No.PCT / JP85 / 00471 Sec。 371日期：1986年3月25日 102（e）1986年3月25日PCT提交1985年8月26日PCT公布。 公开号WO86 / 01506 日本公报1986年3月13日。具有下式的苯并[h]噌啉化合物：其中X和Y各自为氢，卤素，三氟甲基，羟基，具有1至4个碳原子的烷基，具有1至4个碳原子的烷氧基 具有2至4个碳原子的氨基，烷酰氨基，硝基，氰基，具有2至4个碳原子的烷酰基; Ar是苯基或吡啶基，其可任选被至少一个选自卤素，三氟甲基，羟基，具有1至4个碳原子的烷基，具有1至4个碳原子的烷氧基，氨基，具有2至4个碳原子的烷酰氨基 碳原子，硝基和氰基; 并且由虚线表示的键位置是单键或双键，制备所述化合物的方法和含有所述化合物的药物组合物。 由于这些化合物对苯并二氮杂受体具有高亲和力和抗焦虑活性，因此它们可用作过量剂量的抗焦虑剂或作为抗焦虑剂的中和剂。

公开(公告)号：US4843075A

公开(公告)日：1989-06-27

申请号：US87569

申请日：1987-07-17

申请人： Toru Nakao ,  Minoru Kawakami ,  Yasuto Morimoto ,  Shuzo Takehara ,  Tetsuya Tahara

发明人： Toru Nakao ,  Minoru Kawakami ,  Yasuto Morimoto ,  Shuzo Takehara ,  Tetsuya Tahara

IPC分类号： A61K31/495 ,  A61P7/02 ,  A61P25/20 ,  C07D495/04

CPC分类号： C07D495/04

摘要： A benzothiopyrano[4,3-c]pyridazine compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are the same or different and each is hydrogen, halogen, trifluoromethyl, hydroxy, amino, nitro, cyano, C.sub.1-4 alkyl, C.sub.1-4 alkoxy or C.sub.2-5 alkanoylamido, R.sup.3 is hydrogen, C.sub.1-8 alkyl, hydroxy-C.sub.1-4 alkyl, C.sub.2-5 alkanoyloxy-C.sub.1-4 alkyl, pyridyl, aryl, aryl-C.sub.1-4 alkyl, or aryl or aryl-C.sub.1-4 alkyl substituted by at least one substituent selected from the group consisting of halogen, trifluoromethyl, hydroxy, hydroxy, amino, nitro, cyano, C.sub.1-4 alkyl, C.sub.1-4 alkoxy and C.sub.2-5 alkanoylamido on the aromatic ring, n is 0, 1 or 2, and the bond between the 4-position and the 4a-position is a single bond or double bond, a method for production thereof and a use thereof.The compounds possess anti-anxietic activity and are useful as drugs.

公开(公告)号：US5045541A

公开(公告)日：1991-09-03

申请号：US391603

申请日：1989-07-02

申请人： Toru Nakao ,  Minoru Kawakami ,  Masao Hisadome ,  Tetsuya Tahara

发明人： Toru Nakao ,  Minoru Kawakami ,  Masao Hisadome ,  Tetsuya Tahara

IPC分类号： A61K31/50 ,  A61K31/502 ,  A61K31/535 ,  A61P7/00 ,  A61P31/04 ,  A61P35/00 ,  A61P37/00 ,  A61P37/04 ,  C07D237/36 ,  C07D401/04 ,  C07D405/12 ,  C07D491/04 ,  C07D491/052 ,  C07D495/04

CPC分类号： C07D401/04 ,  C07D237/36 ,  C07D491/04 ,  C07D495/04

摘要： Fused pyridazine compounds ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are the same or different and respectively hydrogen, a halogen, hydroxy, nitro, amino, cyano, trifluoromethyl, and alkyl, an alkoxy or an alkanoylamino; one of R.sub.a and R.sub.b is a group of the formula--O--Y--NR.sup.5 R.sup.6wherein R.sup.5 and R.sup.6 are the same or different and respectively hydrogen, an alkyl, a phenylalkyl or a substituted phenylalkyl or a group forming a heterocycle together with the adjacent nitrogen atom and Y stands for a straight- or branched-chain alkylene which may have hydroxy group as a substituent on the chain, and the other is hydrogen, or both of R.sub.a and R.sub.b are the same or different and respectively a group of the formula--O--Y--NR.sup.5 R.sup.6wherein R.sup.5 and R.sup.6 are of the same meanings as defined above; W is .dbd.CH-- or .dbd.N; X is CH.sub.2, S, SO, SO.sub.2 or O; and the bond designated by a broken line in its part stands for a single bond or a double bond, or their pharmaceutically acceptable salts or hydrates and their pharmaceutical use.Said compounds possess stimulating effects on phagocytosis of leukocytes and macrophages, restorative effects on leukopenia, protective effects against infection, antitumor actions and the like and thus they are useable for the prophylaxis or therapy of human diseases accompanied by immunodeficiency.

公开(公告)号：US09484444B2

公开(公告)日：2016-11-01

申请号：US12110621

申请日：2008-04-28

申请人： Shigeru Kusunoki ,  Koichi Mochizuki ,  Minoru Kawakami

发明人： Shigeru Kusunoki ,  Koichi Mochizuki ,  Minoru Kawakami

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L27/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7813 ,  H01L27/0611 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/4232 ,  H01L29/42356 ,  H01L29/4238 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7808 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, an insulating film, a semiconductor element and a resistance element. The semiconductor substrate has a first trench. The insulating film covers an inner surface of the first trench. The semiconductor element has an electrode. The resistance element is electrically connected to the electrode to form a resistance to a current flowing through the electrode, and is arranged in the first trench with the insulating film therebetween. Thereby, the semiconductor device can have a resistance element that has a small footprint and can pass a large current with high reliability.

摘要翻译： 半导体器件具有半导体衬底，绝缘膜，半导体元件和电阻元件。 半导体衬底具有第一沟槽。 绝缘膜覆盖第一沟槽的内表面。 半导体元件具有电极。 电阻元件电连接到电极以形成对流过电极的电流的电阻，并且布置在第一沟槽中，其间具有绝缘膜。 因此，半导体器件可以具有占地面积小的电阻元件，并且可以高可靠性地传递大电流。

公开(公告)号：US4849421A

公开(公告)日：1989-07-18

申请号：US162935

申请日：1988-03-02

申请人： Toru Nakao ,  Minoru Kawakami ,  Minoru Obata ,  Kenji Morita

发明人： Toru Nakao ,  Minoru Kawakami ,  Minoru Obata ,  Kenji Morita

IPC分类号： C07D495/04

CPC分类号： C07D495/04

摘要： A benzothiepino 5,4-c]pyridazine compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are the same or different and each is hydrogen, halogen, trifluoromethyl, hydroxy, amino, nitro, cyano, C.sub.1-4 alkyl, C.sub.1-4 alkoxy, or C.sub.2-5 alkanoylamino, R.sup.3 is hydrogen, C.sub.1-8 alkyl, hydroxy-C.sub.1-4 alkyl, C.sub.2-5 alkanoyloxy-C.sub.1-4 alkyl, aryl, aryl-C.sub.1-4 alkyl, heteroaryl, or substituted aryl, aryl-C.sub.1-4 alkyl or heteroaryl by 1 to 3 substituents selected from the group consisting of halogen, trifluoromethyl, hydroxy, amino, nitro, cyano, C.sub.1-4 alkyl, C.sub.1-4 alkoxy and C.sub.2-5 alkanoylamino on the armoatic ring, n is 0, 1 or 2, and the bond between the 4-position and the 4a-position is single bond or double bond.Said compounds exhibit anti-anxietic activity and are useful as anti-anxiety agent.

公开(公告)号：US20080290407A1

公开(公告)日：2008-11-27

申请号：US12110621

申请日：2008-04-28

申请人： Shigeru Kusunoki ,  Koichi Mochizuki ,  Minoru Kawakami

发明人： Shigeru Kusunoki ,  Koichi Mochizuki ,  Minoru Kawakami

IPC分类号： H01L27/06

CPC分类号： H01L29/7813 ,  H01L27/0611 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/4232 ,  H01L29/42356 ,  H01L29/4238 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7808 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, an insulating film, a semiconductor element and a resistance element. The semiconductor substrate has a first trench. The insulating film covers an inner surface of the first trench. The semiconductor element has an electrode. The resistance element is electrically connected to the electrode to form a resistance to a current flowing through the electrode, and is arranged in the first trench with the insulating film therebetween. Thereby, the semiconductor device can have a resistance element that has a small footprint and can pass a large current with high reliability.

摘要翻译： 半导体器件具有半导体衬底，绝缘膜，半导体元件和电阻元件。 半导体衬底具有第一沟槽。 绝缘膜覆盖第一沟槽的内表面。 半导体元件具有电极。 电阻元件电连接到电极以形成对流过电极的电流的电阻，并且布置在第一沟槽中，其间具有绝缘膜。 因此，半导体器件可以具有占地面积小的电阻元件，并且可以高可靠性地传递大电流。

公开(公告)号：US4632728A

公开(公告)日：1986-12-30

申请号：US788645

申请日：1985-10-17

申请人： Minoru Kawakami

发明人： Minoru Kawakami

IPC分类号： H01L21/316 ,  H01L21/56 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/56 ,  H01L23/3178 ,  H01L2924/0002 ,  Y10S438/958

摘要： In a method of manufacturing a glass passivation type semiconductor device wherein a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junction in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass; a method of manufacturing a glass passivation type semiconductor device according to this invention consists in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alingment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 .mu.m thick and glass films at the other parts being rendered 4-10 .mu.m thick, and that unnecessary portions of said glass films are thereafter removed by etching, using a photoresist as a mask.

摘要翻译： 在制造玻璃钝化型半导体器件的方法中，其中通过将第二导电类型的杂质扩散到pn结中而形成第一导电类型的硅半导体衬底，设置到达pn结的凹部以露出pn 凹陷中的接合处，并且pn结的暴露部分被低熔点玻璃覆盖; 根据本发明的制造玻璃钝化型半导体器件的方法在于，使用印刷掩模，玻璃沉积在晶片的整个表面上，除了晶片的外周或其必需的预定部分 随后的步骤是将所述凹部的底部的玻璃膜和pn接合部分的厚度设为至少10微米，其他部分的玻璃膜的厚度为4-10微米，并且所述玻璃的不需要的部分 然后通过蚀刻，使用光致抗蚀剂作为掩模去除膜。

公开(公告)号：US5929482A

公开(公告)日：1999-07-27

申请号：US61056

申请日：1998-04-16

申请人： Minoru Kawakami ,  Mitsuhiro Yano ,  Yasunori Yamashita ,  Hidetoshi Souno

发明人： Minoru Kawakami ,  Mitsuhiro Yano ,  Yasunori Yamashita ,  Hidetoshi Souno

IPC分类号： H01L29/36 ,  H01L21/28 ,  H01L21/308 ,  H01L21/322 ,  H01L21/336 ,  H01L29/78 ,  H01L21/324

CPC分类号： H01L21/3083 ,  H01L29/7813 ,  H01L21/28167

摘要： An n.sup.+ semiconductor substrate (1) using a silicon wafer as a base material and including As includes oxygen of which the concentration is in the range of 12E17 atoms/cm.sup.3 to 20E17 atoms/cm.sup.3. The first epitaxial growth layer (2) of n type and a diffusion layer (3) of p type are formed in sequence on the second major surface (1S2) of the semiconductor substrate (1). The thickness of an epitaxial a growth layer (10) is set to be not more than 20 .mu.m. A trench (6) is formed so as to extend from a surface of the diffusion layer (3) to the inside of the first epitaxial growth layer (2). A gate oxide film (5) is formed on a bottom surface (6B) and a wall surface (6W) of the trench (6) and a conductive layer (11) fills the trench (6). An n-type source layer (4) is formed at a corner (6C) of the trench (6). After that, predetermined electrodes are formed and so on, to complete a device. With this structure, it is possible to reduce a leak current, prevent deterioration in main breakdown voltage and stabilize gate-oxide-film breakdown-voltage characteristics in a vertical MOSFET with trench gate.

摘要翻译： 使用硅晶片作为基材并且包括As的n +半导体衬底（1）包括浓度在12E17原子/ cm3至20E17原子/ cm3范围内的氧。 在半导体衬底（1）的第二主表面（1S2）上依次形成n型第一外延生长层（2）和p型扩散层（3）。 外延生长层（10）的厚度设定为20μm以下。 沟槽（6）形成为从扩散层（3）的表面延伸到第一外延生长层（2）的内部。 在沟槽（6）的底表面（6B）和壁表面（6W）上形成栅极氧化膜（5），并且导电层（11）填充沟槽（6）。 在沟槽（6）的拐角（6C）处形成n型源极层（4）。 之后，形成预定的电极等，以完成装置。 利用这种结构，可以减小泄漏电流，防止主要击穿电压的劣化并且在具有沟槽栅极的垂直MOSFET中稳定栅极氧化膜击穿电压特性。

公开(公告)号：US5198452A

公开(公告)日：1993-03-30

申请号：US728128

申请日：1991-07-10

申请人： Mitsuhiro Konishi ,  Minoru Kawakami ,  Michio Terasawa ,  Toshio Hamasaki

发明人： Mitsuhiro Konishi ,  Minoru Kawakami ,  Michio Terasawa ,  Toshio Hamasaki

IPC分类号： C07D213/30 ,  C07D213/32 ,  C07D213/40 ,  C07D215/12 ,  C07D215/22 ,  C07D215/233 ,  C07D401/12 ,  C07D405/12

CPC分类号： C07D213/30 ,  C07D213/32 ,  C07D213/40 ,  C07D215/12 ,  C07D215/233 ,  C07D401/12 ,  C07D405/12

摘要： A styryl compound of the formula(I): ##STR1## wherein each symbol is as defined in the specification, a pharmaceutically acceptable salt or an ester thereof is disclosed.Since the compounds of the present invention possess potent and long-lasting leukotriene-antagonistic actions and inhibitory actions against leukotriene, and exhibit better absorption by the oral administration.Further, the compounds of the present invention possess 5-lipoxygenase-inhibitory actions and/or cyclooxygenase-inhibitory actions, inhibitory actions to biosynthesis of LTB4, chemotactic actions against human leucoccyte, chymase-inhibitory actions, inhibitory actions to release of histamine or antihistamine actions.Therefore, they are useful as the prophylactic and therapeutic medicines for brochial asthma, chronic bronchitis, atopic dermatitis, allergic rhinitis, allergic arthritis, allergic conjunctivitis, hay fever, urticaria, alimentary allergy, pain, pyretolysis, rheumatoid, thrombosis, coronary vascular diseases, ischemic heart disease, peptic or duodenal ulcer and the like.

摘要翻译： 公开了式（I）的苯乙烯基化合物：其中每个符号如说明书中所定义，其药学上可接受的盐或酯。 由于本发明的化合物具有强效的和持久的白三烯拮抗作用和对白细胞三烯的抑制作用，并且通过口服给药表现出更好的吸收。 此外，本发明的化合物具有5-脂氧合酶抑制作用和/或环加氧酶抑制作用，对LTB4的生物合成的抑制作用，对人类白细胞的趋化作用，糜酶抑制作用，释放组胺或抗组织胺作用的抑制作用 。 因此，它们可用作小儿哮喘，慢性支气管炎，特应性皮炎，过敏性鼻炎，过敏性关节炎，过敏性结膜炎，花粉症，荨麻疹，消化道变态反应，疼痛，并发症，类风湿，血栓形成，冠状动脉血管疾病等预防和治疗药物。 缺血性心脏病，消化性溃疡或十二指肠溃疡等。