Abstract:
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
Abstract:
In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.
Abstract:
In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.
Abstract:
Technologies for a micro-concentrator modular array. The micro-concentrator modular array may include two or more micro-concentrator solar modules. One or more of the micro-concentrator solar modules may be removable from the micro-concentrator modular array. Micro-concentrator solar modules may be added to a micro-concentrator modular array. One or more of the micro-concentrator solar modules may be electrically and/or mechanically connected to other micro-concentrator solar modules. To facilitate an electrical connection, a conductive connector may be used to connect an electrical output of one micro-concentrator solar module with an electrical input of another micro-concentrator solar module.
Abstract:
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
Abstract:
A method and apparatus for managing a solar array. Light is measured using a threshold sensor to generate sensor data. A selected threshold is computed for an electrical output generated by a plurality of solar cells in the solar array based on the sensor data using control logic in a control module.
Abstract:
A method and apparatus for calibrating a reflector in a solar array. A switch device is switched from a first state to a second state. A calibration voltage is applied to each of a set of actuation devices associated with the reflector in response to the switch device switching to the second state when the calibration circuit is electrically connected to the set of actuation devices.
Abstract:
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
Abstract:
A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.
Abstract:
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.