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1.发明授权Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing 有权通过混合形成的具有光子带隙结构的边缘发射半导体激光器公开(公告)号：US08582616B2
公开(公告)日：2013-11-12
申请号：US12834363
申请日：2010-07-12
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/105 , H01S5/2036 , H01S5/2072 , H01S5/4031 , H01S2301/18
摘要： A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
摘要翻译： 具有宽发射极宽度的单独约束异质结构，边缘发射半导体激光器具有延伸的间隔开的混合和无序区域，其平行于发射极的发射方向延伸穿过发射极并且与发射极平行。 混合区域抑制高阶模式的激光。 这限制了激光发射的光束的慢轴发散。
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2.发明申请EDGE-EMITTING SEMICONDUCTOR LASER WITH PHOTONIC-BANDGAP STRUCTURE FORMED BY INTERMIXING 有权具有通过界面形成的光子带结构的边缘发射半导体激光公开(公告)号：US20100142575A1
公开(公告)日：2010-06-10
申请号：US12330304
申请日：2008-12-08
CPC分类号： H01S5/20 , H01S5/105 , H01S5/2036 , H01S5/2072 , H01S5/4031 , H01S2301/18
摘要： A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
摘要翻译： 具有宽发射极宽度的单独约束异质结构，边缘发射半导体激光器具有延伸的间隔开的混合和无序区域，其平行于发射极的发射方向延伸穿过发射极并且与发射极平行。 混合区域抑制高阶模式的激光。 这限制了激光发射的光束的慢轴发散。
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公开(公告)号：US20100278204A1
公开(公告)日：2010-11-04
申请号：US12834363
申请日：2010-07-12
CPC分类号： H01S5/20 , H01S5/105 , H01S5/2036 , H01S5/2072 , H01S5/4031 , H01S2301/18
摘要： A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
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4.发明授权Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing 有权通过混合形成的具有光子带隙结构的边缘发射半导体激光器公开(公告)号：US07782920B2
公开(公告)日：2010-08-24
申请号：US12330304
申请日：2008-12-08
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/105 , H01S5/2036 , H01S5/2072 , H01S5/4031 , H01S2301/18
摘要： A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
摘要翻译： 具有宽发射极宽度的单独约束异质结构，边缘发射半导体激光器具有延伸的间隔开的混合和无序区域，其平行于发射极的发射方向延伸穿过发射极并且与发射极平行。 混合区域抑制高阶模式的激光。 这限制了激光发射的光束的慢轴发散。
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公开(公告)号：US4788688A
公开(公告)日：1988-11-29
申请号：US876942
申请日：1986-06-20
CPC分类号： H01S5/305 , H01S5/3054 , H01S5/32391
摘要： A semiconductor laser of the heterostructure type is grown on a p-type substrate and has a plurality of p-type active layers. In a preferred embodiment, the active layers are grown by liquid phase epitaxy from a single melt which is maintained just below its equilibrium temperature and is cooled very slowly during deposition. As a result, the active layers are substantially identical in composition and have a very low lattice mismatch. They emit light at characteristic wavelengths within 50 angstroms of each other, indicating that their modal gain envelopes coincide. This condition minimizes the threshold current.
摘要翻译： 异质结构型的半导体激光器生长在p型衬底上并且具有多个p型有源层。 在优选的实施方案中，活性层通过液相外延从单一的熔体生长，其保持刚好低于其平衡温度，并且在沉积期间非常缓慢地冷却。 结果，有源层的组成基本相同，并且具有非常低的晶格失配。 它们在相互之间的50埃以内的特征波长发光，表明它们的模态增益包络一致。 该条件使阈值电流最小化。
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6.发明授权Separate confinement heterostructure with asymmetric structure and composition 失效具有不对称结构和组成的单独的约束异质结构公开(公告)号：US07903711B1
公开(公告)日：2011-03-08
申请号：US12617780
申请日：2009-11-13
申请人： Thomas C. Hasenberg , Guoli Liu
发明人： Thomas C. Hasenberg , Guoli Liu
IPC分类号： H01S5/00
CPC分类号： H01S5/2004 , B82Y20/00 , H01S5/3213 , H01S5/3434 , H01S5/34353 , H01S5/3436
摘要： A separate confinement heterostructure includes a quantum-well layer bounded by an n-side waveguide layer and a p-side waveguide layer. The waveguide layers guide a lasing mode of the heterostructure. The n-side waveguide layer is composed of indium gallium phosphide (InGaP) and the p-side layer is composed of aluminum gallium arsenide (AlGaAs). The heterostructure is configured such that more than 80% of the optical mode propagates in the n-side waveguide layer.
摘要翻译： 单独的限制异质结构包括由n侧波导层和p侧波导层限定的量子阱层。 波导层引导异质结构的激光模式。 n侧波导层由铟镓磷（InGaP）构成，p侧层由砷化镓铝（AlGaAs）构成。 异质结构被配置为使得超过80％的光学模式在n侧波导层中传播。
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公开(公告)号：US5005176A
公开(公告)日：1991-04-02
申请号：US504758
申请日：1990-04-04
申请人： Juan F. Lam , Thomas C. Hasenberg
发明人： Juan F. Lam , Thomas C. Hasenberg
IPC分类号： H01S3/115
CPC分类号： H01S3/115
摘要： A type II staggered alignment multiple quantum well (MQW) is integrated into a laser cavity to implement an active Q-switched device. The MQW initially absorbs and stores energy to prevent the device from lasing. In response to an applied electric field, the MQW experiences a sudden charged carrier population inversion and emits a strong, short duration pulse having a directionality conincident with that of the beam within the lasing cavity. A generalization of the invention involves optical amplification in which photon energy is first stored in a type II staggered alignment MQW, followed by the simultaneous application of an electric field and an optical beam to the MQW, such that the stored energy is released in a sudden pulse which is amplified with respect to the applied optical beam, and is co-directional with the applied beam.
摘要翻译： 将II型交错对准多量子阱（MQW）集成到激光腔中以实现有源Q开关器件。 MQW最初吸收和储存能量以防止设备发射。 响应于施加的电场，MQW经历突然充电的载流子群反转并且发射具有与激光腔内的束的方向性相一致的方向性的强的短持续脉冲。 本发明的一般化涉及光放大，其中光子能量首先存储在II型交错对准MQW中，随后将电场和光束同时施加到MQW，使得存储的能量突然释放 相对于所施加的光束被放大的脉冲，并且与所施加的光束是同向的。
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公开(公告)号：US5577061A
公开(公告)日：1996-11-19
申请号：US359751
申请日：1994-12-16
申请人： Thomas C. Hasenberg , David H. Chow
发明人： Thomas C. Hasenberg , David H. Chow
CPC分类号： H01S5/323 , H01S5/20 , H01S2304/02 , H01S5/305 , H01S5/3216
摘要： A mid-IR laser is provided having novel AlAs/Al.sub.x Ga.sub.1-x Sb or InAs/Al.sub.x Ga.sub.1-x Sb superlattice cladding regions. The arsenide layers of the n-type cladding region are doped n-type, utilizing silicon, and may be used with conventional active region materials, such as InAs.sub.z Sb.sub.1-z and In.sub.w Ga.sub.1-w As.sub.y Sb.sub.1-y. The novel cladding regions can be deposited without the use of Group VI elements, such as Te, which are not preferred source materials for MBE growth. Furthermore, the need for quaternary layers, such as Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, used in the prior art devices, is eliminated; consequently, the need for precise control of two Group V fluxes (As and Sb) is eliminated.
摘要翻译： 提供了具有新型AlAs / Al x Ga 1-x Sb或InAs / Al x Ga 1-x Sb超晶格包层区的中红外激光器。 n型包层区的砷化物层利用硅掺杂为n型，并且可以与诸如InAszSb1-z和InwGa1-wAsySb1-y的常规有源区材料一起使用。 新颖的包层区域可以不使用VI族元素（如Te）沉积，这些元素不是MBE生长的优选源材料。 此外，消除了对在现有技术装置中使用的四元层，例如Al x Ga 1-x As y Sb 1-y的需要; 因此，消除了对两组V通量（As和Sb）进行精确控制的需要。
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公开(公告)号：US5489549A
公开(公告)日：1996-02-06
申请号：US223496
申请日：1994-04-14
IPC分类号： H01L21/203 , H01L21/285 , H01L21/335 , H01L21/338 , H01L29/08 , H01L29/15 , H01L29/778 , H01L29/812 , H01L21/20
CPC分类号： H01L29/66462 , H01L21/28575 , H01L29/0847 , H01L29/0891 , H01L29/155 , H01L29/7783 , Y10S148/16 , Y10S438/938
摘要： High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.
摘要翻译： 通过在III-Sb基层上形成具有III-V族化合物的n掺杂应变层的超晶格，在分子束外延工艺中n掺杂高速III-Sb族材料。 基层具有比应变层更低的导带能级，并允许从应变层掺杂电子流入基层。 基层优选包含Al x Ga 1-x Sb，而应变层优选包含二元或三元化合物，例如具有单一V族组分的AlyGa1-yAs，其中x和y各自为0至1.0。 应变层可以用硅或锡进行n掺杂，如果直接添加到基层，则会产生p型掺杂。
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公开(公告)号：US5420442A
公开(公告)日：1995-05-30
申请号：US223373
申请日：1994-04-05
IPC分类号： H01L21/203 , H01L21/285 , H01L21/335 , H01L21/338 , H01L29/08 , H01L29/15 , H01L29/778 , H01L29/812 , H01L29/80 , H01L29/207
CPC分类号： H01L29/66462 , H01L21/28575 , H01L29/0847 , H01L29/0891 , H01L29/155 , H01L29/7783 , Y10S148/16 , Y10S438/938
摘要： High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.
摘要翻译： 通过在III-Sb基层上形成具有III-V族化合物的n掺杂应变层的超晶格，在分子束外延工艺中n掺杂高速III-Sb族材料。 基层具有比应变层更低的导带能级，并允许从应变层掺杂电子流入基层。 基层优选包含Al x Ga 1-x Sb，而应变层优选包含二元或三元化合物，例如具有单一V族组分的AlyGa1-yAs，其中x和y各自为0至1.0。 应变层可以用硅或锡进行n掺杂，如果直接添加到基层，则会产生p型掺杂。
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