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    Bonded intermediate substrate and method of making same
    2.
    发明授权
    Bonded intermediate substrate and method of making same 有权
    粘合中间基材及其制备方法

    公开(公告)号：US07732301B1

    公开(公告)日：2010-06-08

    申请号：US12081702

    申请日：2008-04-18

    申请人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

    发明人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/28 ,  H01L21/44

    CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of making a bonded intermediate substrate includes forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate, bonding the N-terminated surface of the GaN source substrate to a handle substrate, and exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. The method further includes depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer, and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer. The in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.

    摘要翻译： 制造粘合的中间衬底的方法包括：通过将离子注入到GaN源衬底的N端接表面中，在GaN源衬底中形成弱界面，将GaN源极衬底的N端接表面接合到处理衬底上，以及 从源极衬底剥离薄的GaN单晶层，使得薄的GaN剥离的单晶层保持结合到手柄衬底，并且暴露出薄的GaN单晶层的Ga封端的表面。 该方法还包括将覆盖层直接沉积到薄GaN单晶层的暴露表面上，并且在沉积覆盖层之后在含氮气氛中退火薄GaN单晶层。 在退火之前，存在于薄GaN单晶层中的面内应变相对于退火前存在于所述层中的面内应变而降低。