公开(公告)号：US20110117726A1

公开(公告)日：2011-05-19

申请号：US13012336

申请日：2011-01-24

申请人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

发明人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

IPC分类号： H01L21/30

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A method includes growing a first epitaxial layer of III-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.

摘要翻译： 一种方法包括生长III族氮化物材料的第一外延层，通过将离子注入到第一外延层的暴露表面中形成损伤区域，以及在第一外延层的暴露表面上生长III族氮化物材料的第二外延层 层。 存在于第二外延层中的缺陷水平小于存在于第一外延层中的缺陷水平。

公开(公告)号：US07732301B1

公开(公告)日：2010-06-08

申请号：US12081702

申请日：2008-04-18

申请人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

发明人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/28 ,  H01L21/44

CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a bonded intermediate substrate includes forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate, bonding the N-terminated surface of the GaN source substrate to a handle substrate, and exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. The method further includes depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer, and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer. The in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.

摘要翻译： 制造粘合的中间衬底的方法包括：通过将离子注入到GaN源衬底的N端接表面中，在GaN源衬底中形成弱界面，将GaN源极衬底的N端接表面接合到处理衬底上，以及 从源极衬底剥离薄的GaN单晶层，使得薄的GaN剥离的单晶层保持结合到手柄衬底，并且暴露出薄的GaN单晶层的Ga封端的表面。 该方法还包括将覆盖层直接沉积到薄GaN单晶层的暴露表面上，并且在沉积覆盖层之后在含氮气氛中退火薄GaN单晶层。 在退火之前，存在于薄GaN单晶层中的面内应变相对于退火前存在于所述层中的面内应变而降低。

公开(公告)号：US20090278233A1

公开(公告)日：2009-11-12

申请号：US12178838

申请日：2008-07-24

申请人： Thomas Henry PINNINGTON ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

发明人： Thomas Henry PINNINGTON ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L29/30

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A method includes growing a first epitaxial layer of III-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.

摘要翻译： 一种方法包括生长III族氮化物材料的第一外延层，通过将离子注入到第一外延层的暴露表面中形成损伤区域，以及在第一外延层的暴露表面上生长III族氮化物材料的第二外延层 层。 存在于第二外延层中的缺陷水平小于存在于第一外延层中的缺陷水平。

公开(公告)号：US08101498B2

公开(公告)日：2012-01-24

申请号：US11408239

申请日：2006-04-21

申请人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Charles Tsai ,  Corinne Ladous ,  Harry A. Atwater, Jr. ,  Sean Olson

发明人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Charles Tsai ,  Corinne Ladous ,  Harry A. Atwater, Jr. ,  Sean Olson

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L33/0079 ,  B82Y20/00 ,  H01L21/2007 ,  H01L33/145 ,  H01L33/32 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.

摘要翻译： 中间基板包括结合到适合于诸如III族氮化物半导体层的化合物半导体层的外延生长的薄层的手柄基板。 手柄基板可以是金属或金属合金基板，例如钼或钼合金基板，而薄层可以是蓝宝石层。 制造中间基板的方法包括在源极基板中形成弱界面，将源极基板接合到手柄基板，以及将薄层从源极基板剥离，使得薄层保持结合到手柄基板上。

公开(公告)号：US20060255341A1

公开(公告)日：2006-11-16

申请号：US11408239

申请日：2006-04-21

申请人： Thomas Pinnington ,  James Zahler ,  Young-Bae Park ,  Charles Tsai ,  Corinne Ladous ,  Harry Atwater ,  Sean Olson

发明人： Thomas Pinnington ,  James Zahler ,  Young-Bae Park ,  Charles Tsai ,  Corinne Ladous ,  Harry Atwater ,  Sean Olson

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  B82Y20/00 ,  H01L21/2007 ,  H01L33/145 ,  H01L33/32 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.

摘要翻译： 中间基板包括结合到适合于诸如III族氮化物半导体层的化合物半导体层的外延生长的薄层的手柄基板。 手柄基板可以是金属或金属合金基板，例如钼或钼合金基板，而薄层可以是蓝宝石层。 制造中间基板的方法包括在源极基板中形成弱界面，将源极基板接合到手柄基板，以及将薄层从源极基板剥离，使得薄层保持结合到手柄基板上。

公开(公告)号：US10374120B2

公开(公告)日：2019-08-06

申请号：US11357436

申请日：2006-02-21

申请人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcuberta i Morral ,  Tom Pinnington ,  Sean Olson

发明人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcuberta i Morral ,  Tom Pinnington ,  Sean Olson

IPC分类号： H01L31/102 ,  H01L31/18 ,  C30B33/06 ,  H01L31/0304 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/043

摘要： A method of making a virtual substrate includes providing a donor substrate comprising a single crystal donor layer of a first material over a support substrate, wherein the first material comprises a ternary, quaternary or penternary semiconductor material or a material which is not available in bulk form, bonding the donor substrate to a handle substrate, and separating the donor substrate from the handle substrate such that a single crystal film of the first material remains bonded to the handle substrate.

公开(公告)号：US20070243703A1

公开(公告)日：2007-10-18

申请号：US11785038

申请日：2007-04-13

申请人： Thomas Pinnington ,  Sean Olson ,  James M. Zahler ,  Charles Tsai

发明人： Thomas Pinnington ,  Sean Olson ,  James M. Zahler ,  Charles Tsai

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/4763

CPC分类号： H01L21/2007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02658

摘要： A method of making a semiconductor device includes providing a laminate substrate made by bonding a II-VI or III-V semiconductor laminate film to a support substrate, and preparing the laminate film to enable growth of a II-VI or III-V semiconductor device layer on the laminate substrate.

摘要翻译： 制造半导体器件的方法包括提供通过将II-VI或III-V半导体层压膜结合到支撑衬底而制成的层压衬底，以及制备层压膜以使II-VI或III-V半导体器件能够生长 层。

公开(公告)号：US20060168022A1

公开(公告)日：2006-07-27

申请号：US11008639

申请日：2004-12-09

申请人： Orit Levin ,  Sean Olson ,  Timothy Rang

发明人： Orit Levin ,  Sean Olson ,  Timothy Rang

IPC分类号： G06F15/16

CPC分类号： G06Q10/107 ,  G06F21/606 ,  H04L51/12 ,  H04L63/104

摘要： A method and system for identifying whether an electronic communication is likely to be unwanted by the recipient is provided. A trust system relies on a trust provider, such as a sending domain, to indicate whether an electronic communication is likely to be unwanted. The sending domain may assign its trust level to the electronic communications based on various factors. Upon receiving the electronic communication and the trust level assigned by the sending domain, the receiving domain may determine whether to forward the electronic communication to the recipient based on the trust level. If a sending domain consistently provides trust levels that are accurate assessments of whether electronic communications are unwanted, then the receiving domain learns to trust the trust levels assigned by the sending domain. In contrast, if the assigned trust levels are not accurate, then the receiving domain learns not to trust the sending domain and may discard all message from the receiving domain without forwarding them to the recipients.

公开(公告)号：US20130198154A1

公开(公告)日：2013-08-01

申请号：US13606971

申请日：2012-09-07

申请人： Abigail Welborn ,  Mark Boulter ,  Sean Olson ,  Saurin Shah ,  Aravind Ranganathan ,  Ela Yildizer Genc ,  Michael Smith

发明人： Abigail Welborn ,  Mark Boulter ,  Sean Olson ,  Saurin Shah ,  Aravind Ranganathan ,  Ela Yildizer Genc ,  Michael Smith

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： G06F16/235 ,  G06F16/21

摘要： A method for processing a database application component modification request includes receiving a request to modify a database application component of a database application, initiating the database application component modification, sending a response including instructions for accessing a database application component definition including the database application component modification, wherein the database application component definition is provided as a locally accessible temporary copy of the database application component.

摘要翻译： 一种用于处理数据库应用程序组件修改请求的方法包括：接收修改数据库应用程序的数据库应用程序组件的请求，启动数据库应用程序组件修改，发送响应，包括用于访问包含数据库应用程序组件修改的数据库应用程序组件定义 ，其中所述数据库应用组件定义被提供为所述数据库应用组件的本地可访问的临时副本。

公开(公告)号：US20060168018A1

公开(公告)日：2006-07-27

申请号：US11008083

申请日：2004-12-09

申请人： Orit Levin ,  Sean Olson ,  Timothy Rang ,  Srikanth Shoroff ,  Vadim Eydelman

发明人： Orit Levin ,  Sean Olson ,  Timothy Rang ,  Srikanth Shoroff ,  Vadim Eydelman

IPC分类号： G06F15/16

CPC分类号： G06Q10/107

摘要： A method and system for identifying whether an electronic communication is likely to be unwanted by the recipient is provided. A trust system relies on a trust provider, such as a sending domain, to indicate whether an electronic communication is likely to be unwanted. The sending domain may assign its trust level to the electronic communications based on various factors. Upon receiving the electronic communication and the trust level assigned by the sending domain, the receiving domain may determine whether to forward the electronic communication to the recipient based on the trust level. If a sending domain consistently provides trust levels that are accurate assessments of whether electronic communications are unwanted, then the receiving domain learns to trust the trust levels assigned by the sending domain. In contrast, if the assigned trust levels are not accurate, then the receiving domain learns not to trust the sending domain and may discard all message from the receiving domain without forwarding them to the recipients.