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    Bonded intermediate substrate and method of making same
    1.
    发明授权
    Bonded intermediate substrate and method of making same 有权
    粘合中间基材及其制备方法

    公开(公告)号：US07732301B1

    公开(公告)日：2010-06-08

    申请号：US12081702

    申请日：2008-04-18

    申请人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

    发明人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/28 ,  H01L21/44

    CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of making a bonded intermediate substrate includes forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate, bonding the N-terminated surface of the GaN source substrate to a handle substrate, and exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. The method further includes depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer, and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer. The in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.

    摘要翻译： 制造粘合的中间衬底的方法包括：通过将离子注入到GaN源衬底的N端接表面中，在GaN源衬底中形成弱界面，将GaN源极衬底的N端接表面接合到处理衬底上，以及 从源极衬底剥离薄的GaN单晶层，使得薄的GaN剥离的单晶层保持结合到手柄衬底，并且暴露出薄的GaN单晶层的Ga封端的表面。 该方法还包括将覆盖层直接沉积到薄GaN单晶层的暴露表面上，并且在沉积覆盖层之后在含氮气氛中退火薄GaN单晶层。 在退火之前，存在于薄GaN单晶层中的面内应变相对于退火前存在于所述层中的面内应变而降低。

    Wafer bonded virtual substrate and method for forming the same
    7.
    发明授权
    Wafer bonded virtual substrate and method for forming the same 有权
    晶圆粘结虚拟基板及其形成方法

    公开(公告)号：US07238622B2

    公开(公告)日：2007-07-03

    申请号：US10761918

    申请日：2004-01-20

    申请人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcuberta i Morral

    发明人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcuberta i Morral

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/187 ,  H01L21/02096 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/30625 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/18 ,  Y02E10/50 ,  Y10S438/933

    摘要： A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

    摘要翻译： 形成由光电子器件基板和手柄基板构成的虚拟基板的方法包括以下步骤：引发装置基板与手柄基板的接合，改善或增加装置的机械强度和处理基板，以及使装置基板变薄 在虚拟基板上留下单晶膜，例如通过从器件衬底剥离器件膜。 手柄基板通常为Si或其它便宜的普通基板材料，而光电器件基板由更昂贵和专门的电光材料形成。 使用本发明的方法，可以将各种各样的高质量的薄膜电光材料粘合到便宜的基板上，这些基板用作在薄膜电光材料中制造的光电子器件层的机械支撑。

    Bonded semiconductor substrate
    10.
    发明授权
    Bonded semiconductor substrate 有权
    结合半导体衬底

    公开(公告)号：US07755109B2

    公开(公告)日：2010-07-13

    申请号：US11430160

    申请日：2006-05-09

    申请人： Harry A. Atwater, Jr. ,  James M. Zahler

    发明人： Harry A. Atwater, Jr. ,  James M. Zahler

    IPC分类号： H01L29/739

    CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/1852 ,  Y02E10/544 ,  Y10S438/933

    摘要： Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

    摘要翻译： Ge / Si和其他非硅膜异质结构是通过晶片接合到诸如Si的廉价衬底的Ge膜的氢诱导剥离形成的。 将Ge的薄的单晶层转移到Si衬底。 在Ge / Si异质结构的界面处的键是共价的，以确保良好的热接触，机械强度，并且能够在Si衬底和Ge层之间形成欧姆接触。 为了实现这种类型的键合，使用疏水性晶片结合，因为如本发明所示的那样，促进范德华键的氢表面终止物质在高于600℃的温度下进入共价键，在疏水结合的Ge / Si层中转移 系统。