公开(公告)号：US07332066B2

公开(公告)日：2008-02-19

申请号：US11053050

申请日：2005-02-07

Applicant: Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

Inventor： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC: C25D7/12 ,  C25D17/00 ,  C25D17/12

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US07048841B2

公开(公告)日：2006-05-23

申请号：US10354649

申请日：2003-01-28

Applicant: Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

Inventor： Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

IPC: C23C28/00 ,  C25D17/00

CPC classification number: C25D17/06 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H01L21/2885 ,  Y10T29/49002

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.

公开(公告)号：US20060079085A1

公开(公告)日：2006-04-13

申请号：US11286084

申请日：2005-11-23

Applicant: Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

Inventor： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC: C25D5/34 ,  H01L21/44

CPC classification number: H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract translation: 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20050150770A1

公开(公告)日：2005-07-14

申请号：US11067241

申请日：2005-02-25

Applicant: Linlin Chen

Inventor： Linlin Chen

IPC: C23C28/00 ,  C23C28/02 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/445 ,  H01L21/768 ,  H05K3/42

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

公开(公告)号：US20050139478A1

公开(公告)日：2005-06-30

申请号：US11067278

申请日：2005-02-25

Applicant: Linlin Chen

Inventor： Linlin Chen

IPC: C23C28/00 ,  C23C28/02 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/445 ,  H01L21/768 ,  H05K3/42 ,  C25D5/18

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

公开(公告)号：US06811675B2

公开(公告)日：2004-11-02

申请号：US09885232

申请日：2001-06-20

Applicant: Linlin Chen

Inventor： Linlin Chen

IPC: C25D338

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 本发明采用了对诸如半导体工件的工件的铜金属化的新颖方法。 根据本发明，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积物增强已经沉积在阻挡层上的超薄铜籽晶层 工艺如PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US06743719B1

公开(公告)日：2004-06-01

申请号：US10348821

申请日：2003-01-22

Applicant: Linlin Chen ,  Jiong-Ping Lu ,  Changfeng Xia

Inventor： Linlin Chen ,  Jiong-Ping Lu ,  Changfeng Xia

IPC: H01L2144

CPC classification number: H01L21/76843 ,  H01L21/76861 ,  H01L21/76874 ,  H01L21/76877 ,  Y10S438/908

Abstract: The present invention provides, in one embodiment, a method of forming a metal layer over a semiconductor wafer. The method includes the chemical reduction of copper oxide (105) over the deposited copper seed layer (110) by exposure to a substantially copper-free reducing agent solution (120), such that the copper oxide (105) is substantially converted to elemental copper, followed by electrochemical deposition of a second copper layer (125) over the copper seed layer (110). Such methods and resulting conductive structures thereof may be advantageously used in methods to make integrated circuits comprising interconnection metal lines.

Abstract translation: 在一个实施例中，本发明提供了一种在半导体晶片上形成金属层的方法。 该方法包括通过暴露于基本上不含铜的还原剂溶液（120）而在沉积的铜籽晶层（110）上化学还原氧化铜（105），使得氧化铜（105）基本上转化为元素铜 ，然后在铜籽晶层（110）上电化学沉积第二铜层（125）。 这样的方法及其导电结构可有利地用于制造包括互连金属线的集成电路的方法中。

公开(公告)号：US06632345B1

公开(公告)日：2003-10-14

申请号：US09694413

申请日：2000-10-23

Applicant: LinLin Chen

Inventor： LinLin Chen

IPC: C25D510

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: In accordance with one embodiment of the invention, a process for applying a metal to a workpiece is set forth. The workpiece initially includes a seed layer deposited on at least a portion of a surface thereof that is generally unsuitable for bulk electrochemical deposition. The process starts with this workpiece and repairs the seed layer by depositing a metal using a first electrochemical deposition process to provide a repaired seed layer that is suitable for subsequent bulk electrochemical deposition. After the seed layer has been repaired, a bulk metal deposition over the repaired seed layer is executed by electrochemically depositing a bulk amount of a metal onto the repaired seed layer using a second electrochemical deposition process. The processing parameters of the second electrochemical deposition process are different from processing parameters used in the first electrochemical deposition process. A corresponding apparatus is also set forth.

Abstract translation: 根据本发明的一个实施例，阐述了将金属施加到工件上的工艺。 工件最初包括沉积在其表面的至少一部分上的种子层，其通常不适于本体电化学沉积。 该工艺从该工件开始并且通过使用第一电化学沉积工艺沉积金属来修复种子层，以提供适于随后的大量电化学沉积的修复的种子层。 种子层已被修复之后，通过使用第二电化学沉积工艺通过电化学沉积大量金属到修复的种子层上来进行修复的种子层上的块状金属沉积。 第二电化学沉积工艺的加工参数不同于在第一电化学沉积工艺中使用的加工参数。 还提出了相应的装置。

公开(公告)号：US06508920B1

公开(公告)日：2003-01-21

申请号：US09387577

申请日：1999-08-31

Applicant: Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C25D1700

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US06277263B1

公开(公告)日：2001-08-21

申请号：US09387099

申请日：1999-08-31

Applicant: LinLin Chen

Inventor： LinLin Chen

IPC: C25D510

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 本发明采用了对诸如半导体工件的工件的铜金属化的新颖方法。 根据本发明，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积物增强已经沉积在阻挡层上的超薄铜籽晶层 工艺如PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。