公开(公告)号：US20060124918A1

公开(公告)日：2006-06-15

申请号：US11009241

申请日：2004-12-09

申请人： Thomas Miller ,  Michael Haase ,  Xiaoguang Sun

发明人： Thomas Miller ,  Michael Haase ,  Xiaoguang Sun

IPC分类号： H01L31/109

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0008 ,  H01L33/06

摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.

摘要翻译： 提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。 势阱可能是量子阱。 半导体器件通常是LED，并且可以是白色或近白色的光LED。 半导体器件还可以包括不位于pn结内的第三势阱。 半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。 此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

公开(公告)号：US20060124917A1

公开(公告)日：2006-06-15

申请号：US11009217

申请日：2004-12-09

申请人： Thomas Miller ,  Michael Haase ,  Terry Smith ,  Xiaoguang Sun

发明人： Thomas Miller ,  Michael Haase ,  Terry Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06 ,  H01L33/00

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US20050280013A1

公开(公告)日：2005-12-22

申请号：US10871424

申请日：2004-06-18

申请人： Xiaoguang Sun ,  Thomas Miller ,  Michael Haase

发明人： Xiaoguang Sun ,  Thomas Miller ,  Michael Haase

IPC分类号： H01L31/0248 ,  H01S5/02 ,  H01S5/183 ,  H01S5/32 ,  H01L33/00

CPC分类号： H01S5/183

摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.

摘要翻译： 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x Zn 1-x Se，其中x在0.44和0.54之间。 通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或Al y Al 1-y，其中y在0.44和0.52之间。 在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。 另一方面，本发明提供一种包括根据本发明的分层结构的激光器。 另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

公开(公告)号：US20160139337A1

公开(公告)日：2016-05-19

申请号：US14231000

申请日：2014-03-31

申请人： Michael J. Hines ,  Jie Li ,  Xiaoguang Sun ,  Adam Hokansson ,  Robert J. Blakley ,  Robert Mattern, JR.

发明人： Michael J. Hines ,  Jie Li ,  Xiaoguang Sun ,  Adam Hokansson ,  Robert J. Blakley ,  Robert Mattern, JR.

IPC分类号： G02B6/26 ,  G01K11/32 ,  G02B6/255 ,  G02B6/02 ,  G02B6/028

CPC分类号： G02B6/262 ,  G01K11/32 ,  G02B6/02042 ,  G02B6/0281 ,  G02B6/2551

摘要： In an optical fiber turnaround, first and second optical fiber cores are configured to transmit light bidirectionally along a transmission axis between proximal and distal ends of the first and second optical fiber cores. A reflector component is positioned at the distal ends of the first and second optical fiber cores. The first core, second core, and reflector component are configured to provide a bidirectional routing path, wherein light energy travels from the proximal end of one of the first and second cores towards the reflector component, and travels back from the reflector component along the other of the first and second cores.

摘要翻译： 在光纤周转中，第一和第二光纤芯被配置为沿第一和第二光纤芯的近端和远端之间的透射轴双向透射光。 反射器部件位于第一和第二光纤芯的远端。 第一核心，第二核心和反射器部件被配置为提供双向路由路径，其中光能量从第一和第二核心之一的近端朝向反射器部件行进，并且沿着另一个从反射器部件返回 的第一和第二芯。

公开(公告)号：US08710533B2

公开(公告)日：2014-04-29

申请号：US13701145

申请日：2011-05-31

申请人： Michael A. Haase ,  Junqing Xie ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Junqing Xie ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L25/0756 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed.

摘要翻译： 公开了发光系统。 更具体地，公开了利用波长转换半导体层堆叠的发光系统以及这种堆叠中的优选量的潜在阱类型以实现更优化的性能。

公开(公告)号：US20130075775A1

公开(公告)日：2013-03-28

申请号：US13701145

申请日：2011-05-31

申请人： Michael A. Haase ,  Junqing Xie ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Junqing Xie ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01L33/08

CPC分类号： H01L33/08 ,  H01L25/0756 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed

摘要翻译： 公开了发光系统。 更具体地，公开了利用波长转换半导体层堆叠的发光系统以及这些堆叠中的优选量的潜在阱类型以获得更优化的性能

公开(公告)号：US07700939B2

公开(公告)日：2010-04-20

申请号：US12174087

申请日：2008-07-16

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US20090269076A1

公开(公告)日：2009-10-29

申请号：US12111719

申请日：2008-04-29

申请人： Qingzhong CAI ,  Xiaoguang Sun ,  Gabriel E. Cardona

发明人： Qingzhong CAI ,  Xiaoguang Sun ,  Gabriel E. Cardona

IPC分类号： H04B10/06 ,  H04B10/00

CPC分类号： H04B10/695

摘要： The present invention provides systems and methods for a receiver threshold optimization loop to provide self-contained automatic adjustment in a compact module, such as a pluggable optical transceiver. The receiver threshold optimization loop utilizes a performance metric associated with the receiver, such as FEC, to optimize performance of the receiver. The receiver is optimized through a change in the receiver threshold responsive to the performance metric. Advantageously, the present invention provides improved receiver performance through a continuous adjustment that is self-contained within the receiver, such as within a pluggable optical transceiver compliant to a multi-source agreement (MSA). The receiver threshold optimization loop can include a fine and a coarse sweep of adjustment from an initial setting.

摘要翻译： 本发明提供了一种用于接收器阈值优化回路的系统和方法，以在诸如可插拔光收发器之类的紧凑模块中提供自包含的自动调整。 接收机阈值优化循环利用与接收机（例如FEC）相关联的性能度量来优化接收机的性能。 响应于性能指标，通过接收机阈值的变化来优化接收机。 有利地，本发明通过在接收机内自包含的连续调整来提供改进的接收机性能，例如在符合多源协议（MSA）的可插拔光收发器内。 接收器阈值优化环路可以包括从初始设置的精细和粗略的调整扫描。

公开(公告)号：US07119377B2

公开(公告)日：2006-10-10

申请号：US11275237

申请日：2005-12-20

申请人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

发明人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

IPC分类号： H01L33/00

CPC分类号： H01L31/1032 ,  H01L31/0296 ,  H01L31/03046 ,  H01L31/1035 ,  H01L33/10 ,  H01S5/183 ,  Y02E10/544

摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1−xSe where x is between 0.47 and 0.57. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1−yAs where y is between 0.47 and 0.57. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.

摘要翻译： 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x 1-x Se Se，其中x在0.47和0.57之间。 通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或In y y 1 y y，其中y在0.47和0.57之间。 在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。 另一方面，本发明提供一种包括根据本发明的分层结构的激光器。 另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

公开(公告)号：US08488641B2

公开(公告)日：2013-07-16

申请号：US13060554

申请日：2009-08-18

申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01S3/14 ,  H01S5/00

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/309 ,  H01S5/347 ,  H01S5/423 ,  H01S2301/18

摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

摘要翻译： 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。 光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。 第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。 第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。 半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。