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1.发明申请METHOD OF FORMING ORIENTED BLOCK COPOLYMER LINE PATTERNS, BLOCK COPOLYMER LINE PATTERNS FORMED THEREBY, AND THEIR USE TO FORM PATTERNED ARTICLES 有权形成面向嵌段共聚物线图案的方法，其形成的嵌段共聚物线图案及其用于形成图案的文章公开(公告)号：US20120301677A1
公开(公告)日：2012-11-29
申请号：US13480506
申请日：2012-05-25
申请人： Thomas P. Russell , Sung Woo Hong , Doug Hyun Lee , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Sung Woo Hong , Doug Hyun Lee , Soojin Park , Ting Xu
CPC分类号： B05D3/0466 , B05D3/0254 , B05D3/10 , B05D3/107 , B05D5/02 , B81C1/00031 , B81C1/00055 , B81C1/00063 , B81C1/00071 , B81C1/00079 , B81C2201/0149 , G03F7/0002 , Y10T428/24521
摘要： A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
摘要翻译： 通过包括在基板表面上形成具有平行小面的嵌段共聚物膜，并且使嵌段共聚物膜退火以形成退火的嵌段共聚物膜的方法形成具有高程度的高程度的线图案的嵌段共聚物膜 具有平行于衬底表面并且垂直于衬底的平行面的线性微区域。 线图案化的嵌段共聚物膜可用于制造磁存储介质，偏振装置和纳米线阵列。
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2.发明申请SELF-ASSEMBLY OF BLOCK COPOLYMERS ON TOPOGRAPHICALLY PATTERNED POLYMERIC SUBSTRATES 有权嵌入式聚合物基板上的嵌段共聚物自组装公开(公告)号：US20100075116A1
公开(公告)日：2010-03-25
申请号：US12553484
申请日：2009-09-03
申请人： Thomas P. Russell , Soojin Park , Doug Hyun Lee , Ting Xu
发明人： Thomas P. Russell , Soojin Park , Doug Hyun Lee , Ting Xu
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , Y10T428/24802 , Y10T428/249953
摘要： Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films.
摘要翻译： 通过一种方法制备高度有序的嵌段共聚物膜，该方法包括形成地形图案化的结晶表面的聚合物复合物，在聚合物复合体的地形图形表面上形成嵌段共聚物膜，并退火嵌段共聚物膜。 所得到的结构可以用于各种不同的应用，包括制造高密度数据存储介质。 使用柔性聚合物形成聚合物复制品的能力有助于利用高阶嵌段共聚物膜的工业规模工艺。
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3.发明授权Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles 有权形成取向嵌段共聚物线图案的方法，由此形成的嵌段共聚物线图案及其用于形成图案制品的用途公开(公告)号：US09156682B2
公开(公告)日：2015-10-13
申请号：US13480506
申请日：2012-05-25
申请人： Thomas P. Russell , Sung Woo Hong , Doug Hyun Lee , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Sung Woo Hong , Doug Hyun Lee , Soojin Park , Ting Xu
CPC分类号： B05D3/0466 , B05D3/0254 , B05D3/10 , B05D3/107 , B05D5/02 , B81C1/00031 , B81C1/00055 , B81C1/00063 , B81C1/00071 , B81C1/00079 , B81C2201/0149 , G03F7/0002 , Y10T428/24521
摘要： A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
摘要翻译： 通过包括在基板表面上形成具有平行小面的嵌段共聚物膜，并且使嵌段共聚物膜退火以形成退火的嵌段共聚物膜的方法形成具有高程度的高程度的线图案的嵌段共聚物膜 具有平行于衬底表面并且垂直于衬底的平行面的线性微区域。 线图案化的嵌段共聚物膜可用于制造磁存储介质，偏振装置和纳米线阵列。
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4.发明授权公开(公告)号：US08581272B2
公开(公告)日：2013-11-12
申请号：US13461175
申请日：2012-05-01
申请人： Thomas P. Russell , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Soojin Park , Ting Xu
IPC分类号： H01L21/00
CPC分类号： H01L21/31133 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , G11C11/14 , H01L29/0657 , H01L43/02 , H01L43/12 , Y10S977/70 , Y10S977/757 , Y10S977/888 , Y10T428/2457 , Y10T428/24802 , Y10T428/249953 , Y10T428/249975
摘要： A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film. The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.
摘要翻译： 通过在杂交晶体基底上形成嵌段共聚物膜，退火嵌段共聚物膜，然后重构退火的嵌段共聚物膜的表面来制备纳米图案化的表面。 该方法在保持在大面积上的嵌段共聚物膜中产生了排列良好的空隙阵列。 纳米图案嵌段共聚物膜可用于各种不同的应用，包括制造高密度数据存储介质。
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5.发明申请SELF-ASSEMBLY OF BLOCK COPOLYMERS ON TOPOGRAPHICALLY PATTERNED POLYMERIC SUBSTRATES 有权嵌入式聚合物基板上的嵌段共聚物自组装公开(公告)号：US20120276346A1
公开(公告)日：2012-11-01
申请号：US13546378
申请日：2012-07-11
申请人： Thomas P. Russell , Soojin Park , Dong Hyun Lee , Ting Xu
发明人： Thomas P. Russell , Soojin Park , Dong Hyun Lee , Ting Xu
IPC分类号： B32B3/10
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , Y10T428/24802 , Y10T428/249953
摘要： Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films.
摘要翻译： 通过一种方法制备高度有序的嵌段共聚物膜，该方法包括形成地形图案化的结晶表面的聚合物复合物，在聚合物复合体的地形图形表面上形成嵌段共聚物膜，并退火嵌段共聚物膜。 所得到的结构可以用于各种不同的应用，包括制造高密度数据存储介质。 使用柔性聚合物形成聚合物复制品的能力有助于利用高阶嵌段共聚物膜的工业规模工艺。
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6.发明授权Self-assembly of block copolymers on topographically patterned polymeric substrates 有权嵌段共聚物在地形图案聚合物基材上的自组装公开(公告)号：US09335629B2
公开(公告)日：2016-05-10
申请号：US13546378
申请日：2012-07-11
申请人： Thomas P. Russell , Soojin Park , Dong Hyun Lee , Ting Xu
发明人： Thomas P. Russell , Soojin Park , Dong Hyun Lee , Ting Xu
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , Y10T428/24802 , Y10T428/249953
摘要： Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films.
摘要翻译： 通过一种方法制备高度有序的嵌段共聚物膜，该方法包括形成地形图案化的结晶表面的聚合物复合物，在聚合物复合体的地形图形表面上形成嵌段共聚物膜，并退火嵌段共聚物膜。 所得到的结构可以用于各种不同的应用，包括制造高密度数据存储介质。 使用柔性聚合物形成聚合物复制品的能力有助于利用高阶嵌段共聚物膜的工业规模工艺。
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7.发明申请公开(公告)号：US20100112308A1
公开(公告)日：2010-05-06
申请号：US12553401
申请日：2009-09-03
申请人： Thomas P. Russell , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Soojin Park , Ting Xu
CPC分类号： H01L21/31133 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , G11C11/14 , H01L29/0657 , H01L43/02 , H01L43/12 , Y10S977/70 , Y10S977/757 , Y10S977/888 , Y10T428/2457 , Y10T428/24802 , Y10T428/249953 , Y10T428/249975
摘要： A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film. The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.
摘要翻译： 通过在杂交晶体基底上形成嵌段共聚物膜，退火嵌段共聚物膜，然后重构退火的嵌段共聚物膜的表面来制备纳米图案化的表面。 该方法在保持在大面积上的嵌段共聚物膜中产生了排列良好的空隙阵列。 纳米图案嵌段共聚物膜可用于各种不同的应用，包括制造高密度数据存储介质。
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公开(公告)号：US09718094B2
公开(公告)日：2017-08-01
申请号：US14845488
申请日：2015-09-04
申请人： Thomas P. Russell , Sung Woo Hong , Dong Hyun Lee , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Sung Woo Hong , Dong Hyun Lee , Soojin Park , Ting Xu
CPC分类号： B05D3/0466 , B05D3/0254 , B05D3/10 , B05D3/107 , B05D5/02 , B81C1/00031 , B81C1/00055 , B81C1/00063 , B81C1/00071 , B81C1/00079 , B81C2201/0149 , G03F7/0002 , Y10T428/24521
摘要： A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
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9.发明申请METHOD OF FORMING ORIENTED BLOCK COPOLYMER LINE PATTERNS, BLOCK COPOLYMER LINE PATTERNS FORMED THEREBY, AND THEIR USE TO FORM PATTERNED ARTICLES 有权形成面向嵌段共聚物线图案的方法，其形成的嵌段共聚物线图案及其用于形成图案的文章公开(公告)号：US20150375262A1
公开(公告)日：2015-12-31
申请号：US14845488
申请日：2015-09-04
申请人： Thomas P. Russell , Sung Woo Hong , Dong Hyun Lee , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Sung Woo Hong , Dong Hyun Lee , Soojin Park , Ting Xu
IPC分类号： B05D3/04
CPC分类号： B05D3/0466 , B05D3/0254 , B05D3/10 , B05D3/107 , B05D5/02 , B81C1/00031 , B81C1/00055 , B81C1/00063 , B81C1/00071 , B81C1/00079 , B81C2201/0149 , G03F7/0002 , Y10T428/24521
摘要： A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
摘要翻译： 通过包括在基板表面上形成具有平行小面的嵌段共聚物膜，并且使嵌段共聚物膜退火以形成退火的嵌段共聚物膜的方法形成具有高程度的高程度的线图案的嵌段共聚物膜 具有平行于衬底表面并且垂直于衬底的平行面的线性微区域。 线图案化的嵌段共聚物膜可用于制造磁存储介质，偏振装置和纳米线阵列。
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10.发明申请公开(公告)号：US20120211871A1
公开(公告)日：2012-08-23
申请号：US13461175
申请日：2012-05-01
申请人： Thomas P. Russell , Soojin Park , Ting Xu
发明人： Thomas P. Russell , Soojin Park , Ting Xu
CPC分类号： H01L21/31133 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , G11C11/14 , H01L29/0657 , H01L43/02 , H01L43/12 , Y10S977/70 , Y10S977/757 , Y10S977/888 , Y10T428/2457 , Y10T428/24802 , Y10T428/249953 , Y10T428/249975
摘要： A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.
摘要翻译： 通过在杂交晶体基底上形成嵌段共聚物膜，退火嵌段共聚物膜，然后重构退火的嵌段共聚物膜的表面来制备纳米图案化的表面。该方法在嵌段共聚物膜中产生了良好排列的空隙， 维持在大面积。 纳米图案嵌段共聚物膜可用于各种不同的应用，包括制造高密度数据存储介质。
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