摘要:
A memory includes a bit cell array including a plurality of word lines and address decode circuitry having an output to provide a predecode value. The address decode circuitry includes a first plurality of transistors having a first gate oxide thickness. The memory further includes word line driver circuitry having an input coupled to the output of the address decode circuitry and a plurality of outputs, each output coupled to a corresponding word line of the plurality of word lines. The word line driver includes a second plurality of transistors having a second gate oxide thickness greater than the first gate oxide thickness. A method of operating the memory also is provided.
摘要:
A memory includes a bit cell array including a plurality of word lines and address decode circuitry having an output to provide a predecode value. The address decode circuitry includes a first plurality of transistors having a first gate oxide thickness. The memory further includes word line driver circuitry having an input coupled to the output of the address decode circuitry and a plurality of outputs, each output coupled to a corresponding word line of the plurality of word lines. The word line driver includes a second plurality of transistors having a second gate oxide thickness greater than the first gate oxide thickness. A method of operating the memory also is provided.
摘要:
A memory includes a bit cell array including a plurality of word lines and address decode circuitry having an output to provide a predecode value. The address decode circuitry includes a first plurality of transistors having a first gate oxide thickness. The memory further includes word line driver circuitry having an input coupled to the output of the address decode circuitry and a plurality of outputs, each output coupled to a corresponding word line of the plurality of word lines. The word line driver includes a second plurality of transistors having a second gate oxide thickness greater than the first gate oxide thickness. A method of operating the memory also is provided.
摘要:
A testing system includes a tester probe and a plurality of integrated circuits. Tests are broadcast to the plurality of integrated circuits using carrierless ultra wideband (UWB) radio frequency (RF). All of the plurality of integrated circuits receive, at the same time, test input signals by way of carrierless UWB RF and all of the plurality of integrated circuits run tests and provide results based on the test input signals. Thus, the plurality of integrated circuits are tested simultaneously which significantly reduces test time. Also the tests are not inhibited by physical contact with the integrated circuits.
摘要:
A sense amplifier is coupled to a pair of bit lines for detecting and amplifying a voltage differential therebetween. The sense amplifier has a first differential amplifier coupled to the pair of bit lines enabled in response to a first signal. The sense amplifier also has a second differential amplifier coupled to the pair of bit lines which is enabled a predetermined time duration following the occurrence of the first signal.
摘要:
A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.
摘要:
A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.
摘要:
A memory device (201) includes a plurality of memory cells (203), bit lines, word lines, a sense amplifier (314), and a self-timed latch (215). The sense amplifier (314), responsive to a sense enable signal, is for sensing and amplifying a voltage on the bit lines corresponding to a stored logic state of a selected one of the plurality of memory cells. An isolation circuit (306, 308) is coupled between the bit lines (205 and 207) and the sense amplifier (314). The isolation circuit (306, 308) is for decoupling the selected one of the plurality of memory cells from the sense amplifier (314) at about the same time that the sense enable signal is asserted. A self-timed latch (215) is coupled to the sense amplifier (314). The self-timed latch (215) does not receive a clock signal and is responsive to only the amplified voltage.
摘要:
A current driver circuit (10) sources current to an output node (N4) in response to an input signal (VI) being a logic high. The current driver circuit (10) utilizes a current source (16) which sinks current from the output node (N4) in response to the input signal (VI) switching from a logic high to a logic low. The current source (16) is deactivated for a predetermined time delay after the input signal (Vi) switches from a logic high to a logic low.
摘要:
In integrated circuits which include both ECL and CMOS circuits, there is an ECL to CMOS translator which converts ECL logic levels to CMOS logic levels. To convert from ECL to CMOS levels, the ECL logic high is coupled to the base of an NPN transistor which provides a CMOS logic low. The ECL logic low is prevented from being coupled to the base of the NPN transistor. The CMOS logic high is obtained by an analogous second circuit which is responsive to a complementary ECL signal the output of which is coupled to a P channel transistor. The P channel transistor either provides the CMOS logic high output or is non-conductive.