公开(公告)号：US20140151885A1

公开(公告)日：2014-06-05

申请号：US14012211

申请日：2013-08-28

Applicant: Timo Benzel

Inventor： Peter SCHMOLLNGRUBER ,  Hubert BENZEL ,  Hans ARTMANN ,  Viktor MOROSOW

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53266 ,  G01L19/0069 ,  G01L19/0627 ,  H01L21/7685 ,  H01L23/291 ,  H01L23/3178 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53252 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/02331 ,  H01L2224/02351 ,  H01L2224/0236 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05093 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a substrate which has at least one doped contact area and at least one line which is formed on the substrate and which is electrically connected to the at least one contact area, and at least one diffusion barrier, which includes at least one metal applied on a contact surface of the associated contact area, being formed between the at least one line and the at least one associated contact area, the at least one metal forming multiple metal-plated subareas which contact the contact surface of the same contact area and which are separated from one another. Furthermore, a manufacturing method for a semiconductor device is described.

Abstract translation: 半导体器件包括具有至少一个掺杂接触面积的衬底和形成在衬底上并且至少一个电连接至该至少一个接触区域的至少一条线，以及至少一个扩散阻挡层，其包括至少一个 施加在所述相关接触区域的接触表面上的金属，形成在所述至少一个线与所述至少一个相关联的接触区域之间，所述至少一个金属形成多个金属镀层子区域，所述子区域与所述相同接触区域的接触表面接触 并且彼此分离。 另外，对半导体装置的制造方法进行说明。