摘要:
An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.
摘要:
An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.
摘要:
An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.
摘要:
Disclosed is a method of locating systematic defects in integrated circuits. The invention first performs a preliminary extracting and index processing of the circuit design and then performs feature searching. When performing the preliminary extracting and index processing the invention establishes a window grid for the circuit design and merges basis patterns with shapes in the circuit design within each window of the window grid. The invention transforms shapes in a each window into feature vectors by finding intersections between the basis patterns and the shapes in the windows. Then, the invention clusters the feature vectors to produce an index of feature vectors. After performing the extracting and index processing, the invention performs the process of feature searching by first identifying a defect region window of the circuit layout and similarly merging basis patterns with shapes in the defect region window. This merging process can include rotating and mirroring the shapes in the defect region. The invention similarly transforms shapes in the defect region window into defect vectors by finding intersections between basis patterns and the shapes in the defect region. Then, the invention can easily find feature vectors that are similar to the defect vector using, for example, representative feature vectors from the index of feature vectors. Then, the similarities and differences between the defect vectors and the feature vectors can be analyzed.
摘要:
A system and method of synthesizing layout patterns to test an optical proximity correction algorithm. The method comprises the steps of: embodying Walsh patterns in a set of Walsh pattern matrices; processing groups of matrices from the set of Walsh pattern matrices to form a set of test matrices; mapping the set of test matrices to a test pattern set.
摘要:
Disclosed is a method of locating systematic defects in integrated circuits. The invention first performs a preliminary extracting and index processing of the circuit design and then performs feature searching. When performing the preliminary extracting and index processing the invention establishes a window grid for the circuit design and merges basis patterns with shapes in the circuit design within each window of the window grid. The invention transforms shapes in a each window into feature vectors by finding intersections between the basis patterns and the shapes in the windows. Then, the invention clusters the feature vectors to produce an index of feature vectors. After performing the extracting and index processing, the invention performs the process of feature searching by first identifying a defect region window of the circuit layout and similarly merging basis patterns with shapes in the defect region window. This merging process can include rotating and mirroring the shapes in the defect region. The invention similarly transforms shapes in the defect region window into defect vectors by finding intersections between basis patterns and the shapes in the defect region. Then, the invention can easily find feature vectors that are similar to the defect vector using, for example, representative feature vectors from the index of feature vectors. Then, the similarities and differences between the defect vectors and the feature vectors can be analyzed.
摘要:
A method of designing a layout for manufacturing an integrated circuit is provided, in which computationally intensive portions of the design process, such as simulation of an image transferred through a mask design, or simulation of electrical characteristics of a circuit, are performed more efficiently by only performing such computations on single instance of computational subunits that have an identical geometrical context. Thus, rather than performing such computations based on the functional layout, for which typical design process steps result in significant flattening of the functional hierarchy, and therefore increase the cost of computation, the invention performs simulations on computational subunits stored in a hierarchy based on geometrical context, which minimizes the cost of simulation. The resulting simulation results are subsequently assembled according to the functional layout.
摘要:
A method of forming integrated circuit (IC) chip shapes and a method and computer program product for converting an IC design to a mask, e.g., for standard cell design. Individual book/macro physical designs (layouts) are proximity corrected before unnesting and an outer proximity range is determined for each proximity corrected physical design. Shapes with a unique design (e.g., in boundary cells and unique instances of books) are tagged and the design is unnested. Only the unique shapes are proximity corrected in the unnested design, which may be used to make a mask for fabricating IC chips/wafers.
摘要:
A novel method and system for layout optimization relative to lithographic process windows which facilitates lithographic constraints to be non-localized in order to impart a capability of printing a given circuit with a process window beyond the process windows which are attainable with conventional simplified design rules.
摘要:
Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchal arrangement to ultimately correct for optical lithography.