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21 条记录 (耗时 0.033 秒)

    Lithographic process window optimization under complex constraints on edge placement
    7.
    发明授权
    Lithographic process window optimization under complex constraints on edge placement 有权
    边缘放置复杂约束下的平版印刷工艺窗口优化

    公开(公告)号：US07269817B2

    公开(公告)日：2007-09-11

    申请号：US10776901

    申请日：2004-02-10

    申请人： Fook-Luen Heng ,  Mark A. Lavin ,  Jin-Fuw Lee ,  Daniel L. Ostapko ,  Alan E. Rosenbluth ,  Nakgeuon Seong

    发明人： Fook-Luen Heng ,  Mark A. Lavin ,  Jin-Fuw Lee ,  Daniel L. Ostapko ,  Alan E. Rosenbluth ,  Nakgeuon Seong

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method and system for layout optimization relative to lithographic process windows which facilitates lithographic constraints to be non-localized in order to impart a capability of printing a given circuit with a process window beyond the process windows which are attainable with conventional simplified design rules. Pursuant to the method and system, lithographic capability and process windows are maximized to satisfy local circuit requirements and in order to achieve a maximally efficient layout. In this connection, there is employed a method utilizing a generalized lithographic process window as a measure when layout optimization is extended to a degree beyond that achieved by the simple fixed design rules which are applied to the design rules obtained is the advantage that a lithographic process window is determined purely through the calculation of image intensities and slopes, and as a result, the method can be quite rapid in application because it is possible to take advantage of known methods for rapid calculation of image intensity, and because there is obviated the need for geometrical shape processing during optimization.

    摘要翻译： 一种用于相对于光刻工艺窗口的布局优化的方法和系统，其有助于光刻约束被非局部化，以便赋予给定电路打印超过可以​​用常规简化设计规则达到的过程窗口的处理窗口的能力。 根据方法和系统，光刻能力和工艺窗口最大化，以满足局部电路要求，并实现最大限度的高效布局。 在这方面，采用一种利用广义平版印刷工艺窗口作为测量的方法，当布局优化扩展到超过通过简单的固定设计规则实现的程度时，应用于所获得的设计规则是光刻工艺的优点 通过计算图像强度和斜率来确定窗口，结果，该方法在应用中可以相当快速，因为可以利用已知的方法来快速计算图像强度，并且因为不需要 用于优化期间的几何形状处理。

    Fast method to model photoresist images using focus blur and resist blur
    9.
    发明申请
    Fast method to model photoresist images using focus blur and resist blur 有权
    使用聚焦模糊和抵抗模糊来快速模拟光刻胶图像

    公开(公告)号：US20070224526A1

    公开(公告)日：2007-09-27

    申请号：US11378536

    申请日：2006-03-17

    申请人： Timothy Brunner ,  Gregg Gallatin ,  Ronald Gordon ,  Kafai Lai ,  Alan Rosenbluth ,  Nakgeuon Seong

    发明人： Timothy Brunner ,  Gregg Gallatin ,  Ronald Gordon ,  Kafai Lai ,  Alan Rosenbluth ,  Nakgeuon Seong

    IPC分类号： G03C5/00

    CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70575

    摘要： A method for determining an image of a patterned object formed by a polychromatic lithographic projection system having a laser radiation source of a finite spectral bandwidth and a lens for imaging the patterned object to an image plane within a resist layer. The method comprises providing patterns for the object, a spectrum of the radiation source to be used in the lithographic projection system, an intensity and polarization distribution of the radiation source, and a lens impulse response in the spatial domain or in the spatial frequency domain of the image. The method then includes forming a polychromatic 4D bilinear vector kernel comprising a partially coherent polychromatic joint response between pairs of points in the spatial domain or in the spatial frequency domain, determining the dominant polychromatic 2D kernels of the polychromatic 4D bilinear vector kernel, and determining the image of the patterned object from convolutions of the object patterns with the dominant polychromatic 2D kernels.

    摘要翻译： 一种用于确定由具有有限光谱带宽的激光辐射源的多色光刻投影系统形成的图案化物体的图像的方法和用于将图案化物体成像到抗蚀剂层内的图像平面的透镜。 该方法包括提供对象的图案，在光刻投影系统中使用的辐射源的光谱，辐射源的强度和偏振分布以及在空间域或空间频域中的透镜脉冲响应 图片。 该方法然后包括形成多色4D双线性矢量核，其包括在空间域或空间频域中的点对之间的部分相干多色联合响应，确定多色4D双线性向量核的显性多色2D内核，并确定 图形对象的图像与目标图案与显性多色2D内核的卷积。

    CONTACT HOLE PRINTING METHOD AND APPARATUS WITH SINGLE MASK, MULTIPLE EXPOSURES, AND OPTIMIZED PUPIL FILTERING
    10.
    发明申请
    CONTACT HOLE PRINTING METHOD AND APPARATUS WITH SINGLE MASK, MULTIPLE EXPOSURES, AND OPTIMIZED PUPIL FILTERING 审中-公开
    接触孔打印方法和设备，具有单面，多次曝光和优化PUPIL过滤

    公开(公告)号：US20050287483A1

    公开(公告)日：2005-12-29

    申请号：US10710168

    申请日：2004-06-23

    申请人： Michael Lercel ,  Alan Rosenbluth ,  Nakgeuon Seong

    发明人： Michael Lercel ,  Alan Rosenbluth ,  Nakgeuon Seong

    IPC分类号： G03C5/00 ,  G03F1/14 ,  G03F7/20

    CPC分类号： G03F7/70466 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70566

    摘要： The present invention provides a lithographic method and apparatus (e.g., for printing contact holes on a wafer) that use a single mask, multiple exposures, and optimized pupil filtering. The method comprises: providing a mask including pattern features to be transferred to a wafer; transferring a first set of pattern features from the mask to the wafer using a first type of illumination and a first type of pupil filter; and transferring a second set of pattern features from the mask to the wafer using a second type of illumination and a second type of pupil filter.

    摘要翻译： 本发明提供使用单个掩模，多次曝光和优化的光瞳过滤的光刻方法和装置（例如，用于印刷晶片上的接触孔）。 该方法包括：提供包括要传送到晶片的图案特征的掩模; 使用第一类型的照明和第一类型的光瞳滤光器将第一组图案特征从掩模转印到晶片; 以及使用第二类型的照明和第二类型的光瞳滤光器将第二组图案特征从掩模转移到晶片。