摘要:
The disclosed invention relates generally to electronic data storage systems that access data storage memory modules via a data bus comprised of multiple data query lines and, more particularly, to an electronic data storage system provided with a data bus that can be selectively provided with terminations thereby permitting the data storage memory to use either modules that require that the data query lines be open-ended, i.e., without terminations or modules that require that the data bus be terminated and to a method for operating such a system. The present invention is particularly directed to a single memory system that can accommodate either 3.3V DIMMs or DDR DIMMs. This is especially accomplished by providing the processor circuit, used in memory storage systems, with both (3.3V) receiver/driver circuits and double rate (DDR) receiver/driver circuits, with an identification circuit for identifying the type of DIMMs in the memory system coupled thereto, a selection circuit for selecting the receiver/driver circuits required to access the identified DIMMs, and switch for adding or removing terminations to the data query lines, interconnecting the selected receiver driver circuits to identified DIMMS. Thus the invention provides a memory system that can access either 3.3V DIMMs or DDR DIMMs and automatically provide the proper terminations on the data bus used to access the DIMMs.
摘要:
An improved memory module and its use in a computer system is provided. The module includes a DSP first and second individually addressable banks of memory chips. The first bank is configured to function principally under the control of the signal processing element and the second bank is configured to function principally under the control of a system memory controller, although all the portions of each of the memory banks is addressable by both the signal processing element and the system memory controller. Both banks of memory chips can be placed in at least one higher power state and at least one lower power state by either the system memory controller or the DSP. The activity of each bank is sensed while in the higher power state, and the condition of each of the banks is sensed with respect to any activity during operation of the memory bank at the higher power state. The power state of each bank can be changed by either the signal processing element or the system memory controller responsive to preselected conditions of each bank. Each memory bank is returned to a predetermined known condition when changing from a lower power state to a higher power state. This is especially important when the memory bank assigned to the system controller is placed in another state by the DSP.
摘要:
A Dynamic Random Access Memory (DRAM) configurable by eight (.times.8) or by nine (.times.9). The DRAM has nine Data Input/Outputs (I/Os). The memory array is divided into two or more sub-arrays, with sub-array cells arranged in addressable rows and columns. When the DRAM is configured .times.8, one I/O is held in its high impedance state; one ninth of the DRAM's data path (between the array and the ninth I/O) is ignored; and, the entire array address space is available for data storage through eight I/Os. When the DRAM is configured .times.9, all nine I/Os are active; the DRAM I/O path is reconfigured with part of the array providing the ninth bit through the ninth I/O; and the array address space reduced by one-eighth. All nine bits may be from a common sub-array. Alternatively, sub-arrays may be paired so that when the DRAM is configured .times.9, eight bits are accessed in seven-eighths of one sub-array, with the ninth bit being accessed in one eighth of the other sub-array of the pair.
摘要:
A memory device is provided which stacks commands and internally executes each command at the appropriate time, thereby ensuring contiguous data I/O. The memory device is capable of initiating memory accesses either immediately or "stacking" the command along with a "clock count". The clock count defines the number of clock cycles that must occur prior to execution of the command by the memory device. The memory device initiates memory accesses either immediately, or delayed by the number of clocks defined by the clock count for that command. The memory device operates as a slave to the memory controller and therefore has no ability to execute instructions at a time other than that defined by the memory controller.
摘要:
A memory subsystem that includes segment level sparing. The memory subsystem includes a cascaded interconnect system with segment level sparing. The cascaded interconnect system includes two or more memory assemblies and a memory bus. The memory bus includes multiple segments and the memory assemblies are interconnected via the memory bus.
摘要:
An improved memory card and its use in a computer system is provided. The computer system has a system bus which provides requests from a CPU to a memory controller, which then provides signals to the memory card or module or a memory bus. The memory card is provided with first and second banks of DRAMs, a memory card bus and a DSP. Logic circuitry including a memory card data bus controller provides communication of the DSP with the banks of DRAM chips. Logic circuitry is also provided which can selectively connect the DSP to either the first or second bank of DRAMs and selectively connect the memory bus with the other bank of DRAMs or with both banks of DRAMs. Hence when the CPU is accessing one bank of DRAMS the DSP can access the other bank of DRAMs thus allowing the DSP to function utilizing the bank of DRAMs not being accessed by the memory bus to service the CPU or some I/O device.
摘要:
A memory module for attachment to a computer system having a memory bus and a method of using the memory module for error correction by scrubbing soft errors on-board the module is provided. The module includes a printed circuit card with memory storage chips on the card to store data bits and associated ECC check bits. Tabs are provided on the circuit card to couple the card to the memory bus of the computer system. Logic circuitry selectively operatively connects and disconnects the memory chip and the memory bus. A signal processor is connected in circuit relationship with the memory chips. The logic circuitry selectively permits the signal processor to read the stored data bits and associated check bits from the memory chips, recalculate the check bits from the read stored data bits, compare the recalculated check bits with the stored check bits, correct all at least one bit errors in the store data bits and stored associated check bits and re-store the correct data bits and associated check bits in the memory chips. When the memory chips and the memory bus are disconnected, single bit soft errors occurring during storage of the data bits and check bits are corrected periodically before the data is read from the memory chips to the data bus on a read operation.
摘要:
A serial bus and connection to a device on a computer system through a system memory controller is provided on a memory card having a DSP and a memory bus controller to allow the DSP on the memory card to gain access to the system device without using the system memory bus. The serial bus is a two wire serial bus connecting the device to the DSP through the system memory controller. If more than one memory card is present with DSPs or more than one device is contending for access, the system memory controller or arbitrate the access of each memory card or contending device. In such case the serial bus will signal the system memory controller when it wants access to the particular device, and the system memory controller will act as arbitrator to grant or not grant access to the particular memory card or device requesting access. If access is granted the bus memory controller outputs the required control or command word on the serial bus followed by the address and the required data. This serial information is received by the system memory controller which packets it, and, upon completion, outputs the information rapidly on a parallel bus, e.g. a PCI bus to the device which needs the information.
摘要:
A high bandwidth DRAM is provided with two separate bus networks connecting the DRAM to a processor. One bus network is a high speed (e.g., 500 MHZ) 8:1 or 16:1 multiplexed I/O bus and the second is a slower (e.g., 64-bit) bus. The high-speed bus is used for example for graphic intensive applications which require fast access to large numbers of bits in the DRAM memory array. This of course results in higher power requirements. Since, not all applications require such large amounts of data to be transferred between the DRAM and the processor, the slower bus is provided for these less demanding applications such as word processors, spreadsheets, and the like. The slower bus requires less power to operate and therefore results in a power saving mode which, among other things, facilitates longer battery life.
摘要:
A Dynamic Random Access Memory (DRAM) with a burst length programmable as eight (8) or nine (9) bytes. The DRAM array is divided into two or more sub-arrays, with sub-array cells arranged in addressable rows and columns. When the DRAM is programmed in Normal mode, the burst length is 8 and the entire array address space is available for data storage. When the DRAM is programmed for error checking (ECC mode), the burst length is nine and the array is reconfigured with part of the array providing the ninth byte. The DRAM's address space is reduced by one-eighth in ECC mode. Preferably, all nine locations are in the same page, with each page being divided into eight equal portions. In Normal mode all eight equal portions are data storage; and, in ECC mode, seven-eighths of the page is data storage, the remaining one eighth being assigned to check bit storage.