Hybrid heterojunction solar cell fabrication using a doping layer mask
    1.
    发明授权
    Hybrid heterojunction solar cell fabrication using a doping layer mask 失效
    使用掺杂层掩模的混合异质结太阳能电池制造

    公开(公告)号:US08309446B2

    公开(公告)日:2012-11-13

    申请号:US12504216

    申请日:2009-07-16

    IPC分类号: H01L21/225 H01L21/385

    摘要: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.

    摘要翻译: 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中,所述方法包括在衬底的背表面上形成掺杂层,加热掺杂层和衬底以使掺杂层扩散到衬底的背面,在加热掺杂之后纹理化衬底的前表面 在基板的背面上形成电介质层,从基板的多个露出区域的背面去除电介质层的一部分,在该基板的背面上沉积金属层 ,其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通,并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

    HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A DOPING LAYER MASK
    2.
    发明申请
    HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A DOPING LAYER MASK 失效
    混合异常太阳能电池制造使用DOPING LAYER MASK

    公开(公告)号:US20100015756A1

    公开(公告)日:2010-01-21

    申请号:US12504216

    申请日:2009-07-16

    IPC分类号: H01L21/20 H01L21/28 C23F1/00

    摘要: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.

    摘要翻译: 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中,所述方法包括在衬底的背表面上形成掺杂层,加热掺杂层和衬底以使掺杂层扩散到衬底的背面,在加热掺杂之后纹理化衬底的前表面 在基板的背面上形成电介质层,从基板的多个露出区域的背面去除电介质层的一部分,在该基板的背面上沉积金属层 ,其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通,并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

    HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK
    4.
    发明申请
    HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK 失效
    使用金属层掩模的混合异相太阳能电池制造

    公开(公告)号:US20100015751A1

    公开(公告)日:2010-01-21

    申请号:US12504193

    申请日:2009-07-16

    IPC分类号: H01L21/28 B05C11/00

    摘要: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define active regions of the device and regions where the device and/or contact structure is to be located on a surface of a solar cell substrate. The method generally includes the steps of forming one or more layers on a backside of a solar cell substrate to prevent attack of the backside surface of the substrate, and provide a stable supporting surface, when the front side regions of a solar cell are formed. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.

    摘要翻译: 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中,所述方法包括使用各种蚀刻和图案化工艺,其用于限定器件的有源区和器件和/或接触结构将位于太阳能电池基板的表面上的区域。 该方法通常包括以下步骤:在太阳能电池基板的背面形成一个或多个层,以防止在形成太阳能电池的前侧区域时衬底的背面发生侵蚀,并提供稳定的支撑表面。 在一个实施例中,一个或多个层是形成在太阳能电池基板的背面上的金属化的背面接触结构。 在另一个实施例中,一个或多个层是形成在太阳能电池基板的背面上的耐化学电介质层。

    Crystalline Solar Cell Metallization Methods
    9.
    发明申请
    Crystalline Solar Cell Metallization Methods 审中-公开
    结晶太阳能电池金属化方法

    公开(公告)号:US20090139568A1

    公开(公告)日:2009-06-04

    申请号:US12273975

    申请日:2008-11-19

    IPC分类号: H01L31/00 H01L21/02 H01L31/18

    CPC分类号: H01L31/022425 Y02E10/50

    摘要: Embodiments of the invention contemplate formation of a low cost solar cell using novel methods and apparatus to form a metal contact structure. The method generally uses a conductive contact layer that enables formation of a good electrical contact to the solar cell device. In one case, the contact layer is a nickel containing layer. Various deposition techniques may be used to form the metal contact structure.

    摘要翻译: 本发明的实施例考虑使用新颖的方法和装置形成金属接触结构来形成低成本太阳能电池。 该方法通常使用能够形成与太阳能电池器件良好的电接触的导电接触层。 在一种情况下,接触层是含镍层。 可以使用各种沉积技术来形成金属接触结构。

    OXIDE NITRIDE STACK FOR BACKSIDE REFLECTOR OF SOLAR CELL
    10.
    发明申请
    OXIDE NITRIDE STACK FOR BACKSIDE REFLECTOR OF SOLAR CELL 审中-公开
    用于太阳能电池背反射器的氧化物氮化物堆叠

    公开(公告)号:US20110272008A1

    公开(公告)日:2011-11-10

    申请号:US13101871

    申请日:2011-05-05

    摘要: Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1×1011 Coulombs/cm2 on a rear surface of a p-type doped region formed in a substrate comprising semiconductor material, the rear surface opposite a light receiving surface of the substrate and forming a silicon nitride sub-layer on the silicon oxide sub-layer. Embodiments of the invention also include a solar cell device that may be manufactured according methods disclosed herein.

    摘要翻译: 本发明的实施例通常提供在太阳能电池基板上形成多层后表面钝化层的方法。 该方法包括在形成于包含半导体材料的衬底的p型掺杂区的后表面上形成净电荷密度小于或等于2.1×10 11库仑/ cm 2的氧化硅子层, 所述衬底的光接收表面并在所述氧化硅子层上形成氮化硅子层。 本发明的实施例还包括可以根据本文公开的方法制造的太阳能电池装置。