公开(公告)号：US20190066799A1

公开(公告)日：2019-02-28

申请号：US15691584

申请日：2017-08-30

申请人： Ting Luo ,  Kulachet Tanpairoj ,  Harish Singidi ,  Jianmin Huang ,  Preston Thomson ,  Sebastien Andre Jean

发明人： Ting Luo ,  Kulachet Tanpairoj ,  Harish Singidi ,  Jianmin Huang ,  Preston Thomson ,  Sebastien Andre Jean

IPC分类号： G11C16/16 ,  G11C16/04 ,  G11C16/08

CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3409 ,  G11C16/3445 ,  H01L27/11556 ,  H01L27/11582

摘要： Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

公开(公告)号：US20190066736A1

公开(公告)日：2019-02-28

申请号：US15692508

申请日：2017-08-31

申请人： Tyson M. Stichka ,  Preston Thomson ,  Scott Anthony Stoller ,  Christopher Bueb ,  Jianmin Huang ,  Kulachet Tanpairoj ,  Harish Singidi

发明人： Tyson M. Stichka ,  Preston Thomson ,  Scott Anthony Stoller ,  Christopher Bueb ,  Jianmin Huang ,  Kulachet Tanpairoj ,  Harish Singidi

IPC分类号： G11C5/00 ,  G11C7/04 ,  G11C16/04 ,  G11C16/26

CPC分类号： G11C5/005 ,  G11C7/04 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3459 ,  G11C2211/5641

摘要： Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

公开(公告)号：US20190065331A1

公开(公告)日：2019-02-28

申请号：US15690903

申请日：2017-08-30

申请人： Harish Singidi ,  Giuseppe Cariello ,  Deping He ,  Scott Anthony Stoller ,  Devin Batutis ,  Preston Thomson

发明人： Harish Singidi ,  Giuseppe Cariello ,  Deping He ,  Scott Anthony Stoller ,  Devin Batutis ,  Preston Thomson

IPC分类号： G06F11/20

CPC分类号： G06F11/2094 ,  G06F11/1068 ,  G06F2201/82 ,  G11C16/0483 ,  G11C16/349 ,  G11C29/832 ,  G11C29/883

摘要： Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is removed from service in response to encountering a read error in the first memory block that exceeds a first error threshold. Recoverable data is copied from the first memory block to a second memory block. During each of multiple iterations, the first memory block is erased and programmed, and each page of the first memory block is read. In response to none of the pages exhibiting a read error that exceeds a second error threshold during the multiple iterations, the first memory block is returned to service.