公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US09246101B2

公开(公告)日：2016-01-26

申请号：US13583611

申请日：2010-10-29

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： H01L21/00 ,  B05C13/02 ,  B05C21/00 ,  B05C11/11 ,  H01L51/00 ,  C23C14/04 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A deposition mask is used to pattern a thin film 3 on a substrate 10 by depositing deposition particles through a plurality of openings K having a stripe pattern. The deposition mask includes a frame 65; a plurality of mask layers 70 provided in the frame so as to overlap each other; and a support layer 71 provided between the mask layers 70. Each of the mask layers 70 is formed by arranging a plurality of mask wires 72 in a stripe pattern in a tensioned state, and the support layer 71 is formed by arranging a plurality of support wires 74 in a tensioned state so as to cross the mask wires 72. A plurality of gaps 73 in each of the plurality of mask layers 70 overlap each other to form a plurality of through gaps 73a that linearly extend through all of the plurality of mask layers 70. The openings K are formed by the through gaps 73a.

摘要翻译： 沉积掩模用于通过沉积具有条纹图案的多个开口K沉积沉积颗粒来在基板10上图案化薄膜3。 沉积掩模包括框架65; 设置在所述框架中以使得彼此重叠的多个掩模层70; 以及设置在掩模层70之间的支撑层71.每个掩模层70通过以张紧状态布置条纹图案中的多个掩模布线72而形成，并且支撑层71通过布置多个支撑件 电线74处于张紧状态，以便穿过掩模线72.多个掩模层70中的每一个中的多个间隙73彼此重叠以形成多个直线延伸穿过所有多个掩模的通孔73a 开口K由通孔73a形成。

公开(公告)号：US08628620B2

公开(公告)日：2014-01-14

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： C23C16/04 ,  C23C16/00 ,  C23C14/24 ,  C23C14/22 ,  C23C14/00

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。

公开(公告)号：US09055653B2

公开(公告)日：2015-06-09

申请号：US13637627

申请日：2011-02-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C14/24 ,  C23C14/04 ,  H05B33/10 ,  C23C14/12 ,  C23C14/22 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00

CPC分类号： H05B33/10 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/225 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0011 ,  H01L51/56

摘要： A deposition apparatus 50 forms a thin film 3 in a predetermined pattern on a substrate 10 for an organic EL display. A first correction plate 81 and a second correction plate 82 are placed between a shadow mask 60 and a deposition source 53 that emits deposition particles. Each of the correction plates 81, 82 has a plurality of blade plates 83 and a frame 84 that supports the plurality of blade plates 83. The blade plates 83 are placed so as to be tilted with respect to the shadow mask 60, and to extend parallel to each other with an opening 86 between adjoining ones of the blade plates 83 as viewed in a direction perpendicular the deposition mask 60.

摘要翻译： 沉积装置50在用于有机EL显示器的基板10上以预定图案形成薄膜3。 第一校正板81和第二校正板82被放置在荫罩60和发射沉积颗粒的沉积源53之间。 每个校正板81,82具有多个叶片83和支撑多个叶片板83的框架84.叶片板83相对于荫罩60倾斜放置，并且延伸 在与沉积掩模60垂直的方向上观察时，在相邻的刮板83之间具有开口86，彼此平行。

公开(公告)号：US08691016B2

公开(公告)日：2014-04-08

申请号：US13522007

申请日：2010-10-29

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： B05C11/11 ,  C23C16/00 ,  H01L21/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  H01L27/3211 ,  H01L51/0011 ,  H01L51/56

摘要： A deposition mask 601 is used to form a thin film 3 in a prescribed pattern on a substrate 10 by deposition. Each of a plurality of improved openings 62A of the deposition mask 601 has a protruding opening portion 64, and is formed so that the opening amount at an end in a lateral direction is larger than that in a central portion in the lateral direction. In a deposition apparatus 50, the deposition mask 601 is held in a fixed relative positional relation with a deposition source 53 by a mask unit 55. In the case of forming the thin film 3 in a stripe pattern on the substrate 10 by the deposition apparatus 50, deposition particles are sequentially deposited on the substrate 10 while relatively moving the substrate 10 along a scanning direction with a gap H being provided between the substrate 10 and the deposition mask 601.

摘要翻译： 沉积掩模601用于通过沉积在衬底10上以规定的图案形成薄膜3。 沉积掩模601的多个改进开口62A中的每一个具有突出的开口部分64，并且形成为使得横向端部的开口量大于在横向方向上的中心部分的开口量。 在沉积装置50中，沉积掩模601通过掩模单元55与沉积源53保持固定的相对位置关系。在通过沉积装置在基板10上形成条纹图案的薄膜3的情况下 如图50所示，在衬底10和衬底10之间设置有间隙H的同时使衬底10沿着扫描方向相对移动的同时，沉积粒子依次沉积在衬底10上。

公开(公告)号：US09458532B2

公开(公告)日：2016-10-04

申请号：US13395879

申请日：2010-09-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： B05B15/04 ,  B05C11/11 ,  C23C14/12 ,  C23C14/04 ,  H01L51/00 ,  H01L51/56

CPC分类号： H01L51/56 ,  C23C14/042 ,  C23C14/12 ,  H01L51/0011

摘要： The present invention (i) uses a mask unit (80) including: a shadow mask (81) that has an opening (82) and that is smaller in area than a vapor deposition region (210) of a film formation substrate (200) and; a vapor deposition source (85) that has a emission hole (86) for emitting a vapor deposition particle, the emission hole (86) being provided so as to face the shadow mask (81), the shadow mask (81) and the vapor deposition source (85) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask (81) and the film formation substrate (200), (iii) moves at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit (80) and the film formation substrate (200), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region (210) through the opening (82) of the shadow mask (81). This makes it possible to form a high-resolution vapor deposition pattern on a large-sized substrate.

摘要翻译： 本发明（i）使用掩模单元（80），其包括：具有开口（82）并且面积小于成膜基板（200）的气相沉积区域（210）的荫罩（81） 和; 具有用于发射气相沉积粒子的发射孔（86）的蒸气源（85），所述发射孔（86）设置成面对荫罩（81），荫罩（81）和蒸气 沉积源（85）相对于彼此固定在适当位置，（ii）调节荫罩（81）和成膜基底（200）之间的空隙量，（iii）移动至少第一个 掩模单元（80）和成膜基板（200），同时均匀地保持掩模单元（80）和成膜基板（200）之间的空隙量，并且（iv）顺序地将 气相沉积颗粒通过荫罩（81）的开口（82）到蒸镀区域（210）上。 这使得可以在大尺寸基板上形成高分辨率气相沉积图案。

公开(公告)号：US09231210B2

公开(公告)日：2016-01-05

申请号：US13696585

申请日：2011-05-02

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H05B33/10 ,  H01L51/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

摘要翻译： 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US20130059063A1

公开(公告)日：2013-03-07

申请号：US13696585

申请日：2011-05-02

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H05B33/10 ,  C23C16/04

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

摘要翻译： 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US20130273746A1

公开(公告)日：2013-10-17

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。