公开(公告)号：US20170182514A1

公开(公告)日：2017-06-29

申请号：US15382901

申请日：2016-12-19

Applicant: Tokyo Electron Limited

Inventor： Takeshi KUMAGAI ,  Yutaka TAKAHASHI ,  Chihhsiang HSIAO ,  Atsushi ENDO

IPC: B05D1/00

CPC classification number: C23C16/04 ,  C23C16/18 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/0334

Abstract: A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.