APPARATUS AND METHOD FOR PERFORMING SPUTTERING PROCESS

    公开(公告)号:US20220025511A1

    公开(公告)日:2022-01-27

    申请号:US17384058

    申请日:2021-07-23

    Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

    FILM FORMATION DEVICE AND FILM FORMATION METHOD

    公开(公告)号:US20210118653A1

    公开(公告)日:2021-04-22

    申请号:US17050093

    申请日:2019-03-20

    Abstract: A film formation device includes a target holder configured to hold a target for emitting sputtering particles in a processing space inside a processing chamber, a sputtering particle emitting part configured to emit the sputtering particles from the target, a sputtering particle shielding plate having a passage hole through which the emitted sputtering particles pass, a shielding member provided to shield the passage hole, a movement mechanism configured to move the shielding member in the horizontal direction, and a controller. The controller controls the shielding member, which has the placement portion on which a substrate is placed, to be moved in one direction of the horizontal direction, and controls the sputtering particles to be emitted from the target. The sputtering particles passed through the passage hole are deposited on the substrate.

    FILM FORMING SYSTEM, MAGNETIZATION CHARACTERISTIC MEASURING DEVICE, AND FILM FORMING METHOD

    公开(公告)号:US20210082777A1

    公开(公告)日:2021-03-18

    申请号:US17021846

    申请日:2020-09-15

    Abstract: A film forming system for forming a magnetic film is provided. The film forming system includes a processing module configured to form the magnetic film on a substrate, a magnetization characteristic measuring device configured to measure magnetization characteristics of the magnetic film formed on the substrate in the processing module, and a transfer unit configured to transfer the substrate between the processing module and the magnetization characteristic measuring device. The magnetization characteristic measuring device includes a magnetic field applying mechanism having a permanent magnet magnetic circuit configured to apply a magnetic field to the substrate and adjust the magnetic field to be applied to the substrate, and a detector configured to detect magnetization characteristics of the substrate.

    SUBSTRATE PROCESSING APPARATUS AND ABNORMALITY DETECTION METHOD

    公开(公告)号:US20220285197A1

    公开(公告)日:2022-09-08

    申请号:US17652545

    申请日:2022-02-25

    Abstract: A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.

    CATHODE UNIT AND FILM FORMING APPARATUS

    公开(公告)号:US20210257198A1

    公开(公告)日:2021-08-19

    申请号:US17172327

    申请日:2021-02-10

    Abstract: A cathode unit for performing a sputtering film formation includes: a target that emits sputtering particles; a target cooler that includes a cooling plate to which the target is bonded; and a power supply that supplies a power to the target. The target has a high-temperature region that has a higher temperature than other regions of the target during a film formation. The cooling plate includes a coolant flow space through which a coolant flows, and a first wall and a second wall that define the coolant flow space in a thickness direction. In the coolant flow space, a flow path of the coolant is formed by a first partition plate and a second partition plate. The first partition plate does not exist at a portion of the coolant flow space that corresponds to the high-temperature region.

    TARGET STRUCTURE AND FILM FORMING APPARATUS

    公开(公告)号:US20210020419A1

    公开(公告)日:2021-01-21

    申请号:US16929347

    申请日:2020-07-15

    Abstract: A target structure includes a target, a cooling jacket having a flow path through which a heat exchange medium flows, and a backing plate. The target is bonded to one surface of the cooling jacket. A remaining surface of the cooling jacket and the backing plate are bonded in a peripheral portion, and are not bonded in a non-bonding region inside the peripheral portion.

Patent Agency Ranking